Jiin-Chuan Wu

Stripe stabilization in vertical Bloch line memory

Partially grooved, long, rectangular grooves on the garnet surface were used to stabilize minor loop stripes in a vertical Bloch line memory. These stripes reside beneath the stripe confinement groove. The test chip contained 10 or 20 minor loop grooves, 10 read/write (r/w) gate grooves, and a major line groove. The film thickness was 4.76 μm, and the groove was 0.5 μm deep. Each minor loop groove was 500 μm long, four widths were tried: 3.5, 4, 4.5, and 5 μm. Two groove periods were tried: 10 and 20 μm. For stripe initialization, a bubble was nucleated in every minor loop groove by a single current pulse at a 90 Oe bias field. As the bias field was decreased slowly, bubbles began to stripe out at 80 Oe. At 75 Oe, all 10 stripes were stretched to the full groove length. These stripes were stable at bias fields between 70 and 80 Oe. Stripes decreased in length at higher fields, and escaped from the confinement groove at low fields. When stripes escaped from the groove, it always occured from the end not fa...

Major line operation in vertical Bloch line memory

The operation of a major line in a vertical Bloch line memory using a partial garnet grooving architecture was studied experimentally and numerically. The major line was fabricated on a 5‐μm bubble garnet using three conductor layers and a 10% garnet grooving. The major line contains a bubble generator, a bubble propagation track, a bubble expander for bubble detection, and a bubble annihilator. The minimum current for bubble generation was 350 mA, at 50 ns pulse width. The bubble propagation track was a typical dual conductor design with a 5‐μm‐wide conductor and a 20‐μm circuit period. The minimum drive current was 5 and 10 mA at an operating frequency of 250 and 500 kHz, respectively. The bias field margin was from 84 to 100 Oe. The bubble expander was a modification of the propagation track. The meandering conductor and the groove width were gradually increased to stretch the bubble into a stripe. The bias field margin was from 82 to 84 Oe. The numerical model includes the effect of the garnet groovin...

Partial grooving in vertical Bloch line memory

Partially grooved regions in magnetic garnets, used to stabilize minor-loop stripe domains in vertical Bloch line memories have been investigated using arrays of grooves in garnets with a zero-field stripe-width of 2.36 mu m and thickness of 2.26 mu m. Rectangular grooved regions were used to confine the minor loop stripes, using a groove depth of 10% and groove widths of 1.5 mu m and 2.00 mu m. Major line regions were defined by two successive 10% grooving steps. Bias field margins were measured experimentally and computed using a two-dimensional, magnetic-domain computer simulation. The computed margins were shown to be in quantitative agreement with experimentally measured bias field margins. Interpretation of the simulations and the experimental data in these samples indicates that magnetostatic effects dominate magnetostrictive effects in defining bias field stability. >