Jiliang Mu

High-Performance MIM Capacitors for a Secondary Power Supply Application

Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM) capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS) technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V), a moderate energy density (≥1.23 mJ/cm2) per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm), a low leakage current (10−7 A/cm2 at 22.5 V), and a low quadratic voltage coefficient of capacitance (VCC) (≤63.1 ppm/V2). In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

Structural and Optical Properties of Amorphous Al2O3 Thin Film Deposited by Atomic Layer Deposition

Aluminum oxide (Al2O3) amorphous structure with short-range order and long-range disorder has presented promising applications in optical and optoelectronic devices. In this paper, the Al2O3 films with different thickness were prepared by atomic layer deposition (ALD) technology at 200°C in order to achieve amorphous structure. X-ray diffraction (XRD) and energy dispersive spectrum (EDS) results indicated that the Al2O3 films were amorphous structure and stable O/Al ratio. The surface topography investigated by atomic force microscopy (AFM) showed that the samples were smooth and crack-free. Spectroscopic ellipsometer (SE) measurements were operated to investigate the effect of thickness on the structure and optical properties of films with Tauc-Lorentz model. It is found that the band gap exhibits a steady value ~2.3 eV by the UV-VIS transmittance method, but the T-L model was ~3.0 eV. The refractive index and extinction coefficient are related to the variation of thickness and the samples surface quality of amorphous network structure in the thin films. The outstanding optoelectronic properties and facile fabrication of Al2O3 films amorphous structure can be extended to other similar oxides, which could display wide applications in various engineering and industrial fields.