Jimmy Xu

Future trends in microelectronics : from nanophotonics to sensors and energy

Preface ( S. Luryi, J. M. Xu, and A. Zaslavsky). 1 OPTOELECTRONICS AND NANOPHOTONICS. Nanophotonics for Information Systems (Y. Fainman). What Will Modern Photonics Contribute to the Development of Future Optical Communication Technology? (Djafar K. Mynbaev). Ultrafast Nanophotonic Devices For Optical Interconnects (N. N. Ledentsov). Intersubband Quantum-Box Lasers: Progress and Potential as Uncooled Mid-Infrared Sources (D. Botez, G. Tsvid, M. DSouza, J. C. Shin, Z. Liu, J. H. Park, J. Kirch, L. J. Mawst, M. Rathi, T. F. Kuech, I. Vurgaftman, J. Meyer, J. Plant, G. Turner, and P. Zory). GaSb-based Type-I Laser Diodes Operating at 3 µm and Beyond (L. Shterengas, G. Kipshidze, T. Hosoda, and G. Belenky). Bridging Optics and Electronics with Quantum Cascade Lasers, Antennas, and Circuits (J. Faist, C. Walther, M. Amanti, G. Scalari, M. Fischer, and M. Beck). Towards Intersubband Polaritonics: How Fast Can Light and Electrons Mate? (A. A. Anappara, L. Sorba, A. Tredicucci, G. Gunter, A. Sell, A. Leitenstorfer, R. Huber, S. De Liberato, C. Ciuti, and G. Biasiol). Si3N4/SiO2 Planar Photonic Structures Fabricated by Focused Ion Beam (L. A. M. Barea, F. Vallini, D. L. S. Figueira, A. Da Silva Filho, N. C. Frateschi, and A. R. Vaz). 2 ELECTRONIC DEVICES AND SYSTEMS. Silicon-Based Devices and Materials for Nanoscale CMOS and Beyond-CMOS (F. Balestra). Device Proposals Beyond Silicon CMOS (P. M. Solomon). GeOI as a Platform for Ultimate Devices (W. Van Den Daele, S. Cristoloveanu, E. Augendre, C. Le Royer, J.-F. Damlencourt, D. Kazazis, and A. Zaslavsky). Simulation of Self-Heating Effects in Different SOI MOS Architectures (Enrico Sangiorgi, Marco Braccioli and Claudio Fiegna). Nanowires: Technology, Physics and Perspectives (D. Grutzmacher, Th. Schapers, S. Mantl, S. Feste, Q. T. Zhao, H. Hardtdegen, R. Calarco, M. Lepsa, and N. Demarina). Emerging Nanotechnology for Integration of Nanostructures in Nanoelectronic Devices (T. Baron, C. Agraffeil, F. Dhalluin, M. Kogelschtaz, G. Cunge, T. Chevolleau, B. Salem, B. Salhi, H. Abed, A. Potie, L. Latu-Romain, C. Ternon, K. Aissou, L. Montes, Mur, G. Molas, B. De Salvo, E. Jalaguier, T. Ernst, P. Ferret, P. Gentile, and N. Pauc). Scrolled Si/SiGe Heterostructures as Building Blocks for Tube-Like Field-Effect Transistors (N. V. Demarina and D. Grutzmacher). Silicon Nanowire-Based Nonvolatile Memory Cells: Progress and Prospects (Qiliang Li, X. Zhu, Y. Yang, D. E. Ioannou, J. S. Suehle, and C. A. Richter). Prospects and Challenges of Next-Generation Flash Memory Devices (Jang-Sik Lee). Chalcogenide Glassy Semiconductors - Could They Replace Silicon in Memory Devices? (K. D. Tsendin). Current Status and Recent Developments in RSFQ Processor Design (M. Dorojevets). 1/f Noise: The Funeral is Cancelled (or Postponed) (M. E. Levinshtein and S. L. Rumyantsev). 3 PHYSICS, BIOLOGY, AND OTHER SISTER SCIENCES. Spin Hall Effect (M. I. Dyakonov). Can Biology Provide Creative Solutions for Next-Generation Memory Devices? (W. E. van den Berg and S. A. Kushner). Spin Screening of Magnetization Due to Inverse Proximity Effect in Superconducting/Ferromagnetic Bilayers (V. Shelukhin, M. Karpovski, A. Palevski, J. Xia, A. Kapitulnik, and A. Tsukernik). Silicon for Spintronic Applications: Strain-Enhanced Valley Splitting (V. Sverdlov, O. Baumgartner, T. Windbacher, and S. Selberherr). Graphene-Based Terahertz Devices: Concepts and Characteristics (V. Ryzhii, M. Ryzhii, A. Satou, N. Ryabova, T. Otsuji, V. Mitin, F. T. Vasko, A. A. Dubinov, V. Y. Aleshkin, and M. S. Shur). Directed Self-Assembly - A Controllable Route to Optical and Electronic Devices Based on Single Nanostructures (R. L. Williams, D. Dalacu, M. E. Reimer, K. Mnaymneh, V. Sazonova, P. J. Poole, G. C. Aers, R. Cheriton, S. Frederick, D. Kim, J. Lapointe, P. Hawrylak, and M. Korkusi ski). 4 SENSORS, DETECTORS, AND ENERGY. Three-Dimensional Position-Sensitive Wide Bandgap Semiconductor Gamma-Ray Imaging Detectors (Zhong He). Semiconductor Scintillator for Three-Dimensional Array of Radiation Detectors (Serge Luryi and Arsen Subashiev). Semiconductor Gamma Radiation Detectors: Band Structure Effects in Energy Resolution (Arsen Subashiev and Serge Luryi). The Future of Microelectronics is Macroelectronics (M. A. Alam, N. Pimparkar, and B. Ray). An Integration Challenge: Information and Communication Technologies to Address Indoor Air Quality in Commercial Buildings (M. DIorio). Quantum-Dot Infrared Photodetectors: In Search of the Right Design for Room-Temperature Operation (A. Sergeev, V. Mitin, L. H. Chien, and N. Vagidov). Treating the Case of Incurable Hysteresis in VO2 (M. Gurvitch, S. Luryi, A. Polyakov, and A. Shabalov). Exploratory Studies on Silicon-Based Oxide Fuel Cell Power Sources Incorporating Ultrathin Nanostructured Platinum and Cerium Oxide Films as Anode Components (Bo-Kuai Lai, A. C. Johnson, H. Xiong, C. Ko, and S. Ramanathan). Index.

Thyroglobulin antibody resolution after total thyroidectomy for cancer

BACKGROUNDnThyroglobulin antibodies (TgAb) are produced by 10%-25% of thyroid cancer patients and interfere with thyroglobulin measurement, a marker of residual or recurrent cancer after surgery. Our purpose was to describe the TgAb resolution time course and the significance of persistent antibody elevation after thyroidectomy.nnnMETHODSnA database of 247 consecutive patients with TgAb measured preoperatively who underwent thyroidectomy for differentiated thyroid cancer between January 2007 and May 2013 was reviewed. Patients were stratified by TgAb status (positive or negative) and recurrence (defined as biopsy proven disease or unplanned second surgery). Survival and regression analysis was used to determine TgAb resolution time course. Log-rank was used to determine an association between persistent antibody elevation and recurrence.nnnRESULTSnOf 247 patients (77% women, 23% men; mean 45.7xa0±xa01.0xa0y) with TgAb measured preoperatively, 34 (14%) were TgAb+ (≥20 IU/mL; mean 298.1xa0±xa099.2 IU/mL). Median time to TgAb resolution was 11.0xa0±xa02.3xa0mo, and the majority resolved by 32.4xa0mo. Regression analysis of patients with antibody resolution yielded an average decline of -11% IU/mL per month ± 2.2%. Disease-free survival was equivalent between TgAb-positive and TgAb-negative groups (Pxa0=xa00.8). In 9 of 34 patients, antibodies had not resolved at the last follow-up and imaging could not identify recurrent disease.nnnCONCLUSIONSnTgAb are common in patients with thyroid cancer but resolve after treatment at approximately -11% IU/mL per month from preoperative levels with median resolution at 11.0xa0mo. Persistently elevated levels after thyroidectomy were not associated with disease recurrence in our series.

The Future of Single to MultiBand Detector Technologies

This chapter contains sections titled: Introduction Multicolor Single Element Detector Structures State-of-the-Art Multicolor Focal Plane Array Detector Technologies Conclusions References ]]>

Formation of ThreeDimensional SiGe Quantum Dot Crystals

This chapter contains sections titled: Introduction Fabrication and Discussion Conclusions References ]]>

The Problem of a Perfect Lens Made From a Slab With Negative Refraction

This chapter contains sections titled: Introduction Existence of a Perfect Lens with Virtual Focus Conclusions Acknowledgments References

Origin of 1/f Noise in MOS Devices: Concluding a Noisy Debate

This chapter contains sections titled: Introduction Device Structure and Operation Noise Power Spectral Density (PSD) Characteristics in Surface and Volume Conduction Modes Transition from Volume Noise to Surface Noise Bias Dependence of the Normalized Current Noise in Surface and Volume Conduction Modes Conclusions References ]]>

Quasiballistic Transport in NanoMOSFETs

This chapter contains sections titled: Introduction Device Design and Simulation Scattering in the Channel and in the Drain Ballistic Ratio and Scaling Conclusions Acknowledgments References ]]>

Is FaultTolerant Quantum Computation Really Possible

This chapter contains sections titled: Introduction Brief Outline of Ideas Capturing a Lion in the Desert Spin Relaxation or Decoherence Quantum Computation with Decoherence-Free Subspaces Quantum Error Correction by Encoding The Imperfect Two-Qubit Gate The Prescription for Fault-Tolerant Quantum Computation Designing Perpetual Motion Machines of the Second Kind Challenge Conclusions References ]]>

Semiconductor Spintronics: Progress and Challenges

This chapter contains sections titled: Introduction Basic Concepts of Semiconductor Spintronics The Origin of Spin Coupling to External Electric Field Experimental Achievements: Spin Populations and Spin Interference Enhancing Spin Responses to Electric Fields Conceptual Theoretical Problems Conclusions Acknowledgments References ]]>

Physical Limits of Silicon CMOS: Real Showstopper or Wrong Problem?

This chapter contains sections titled: Introduction A Brief History of Si MOS Limits Are We Looking at the Right Problem? Conclusions Acknowledgments References