Jin Jeon

3.2: Integrated a‐Si Gate Driver Circuit for TFT‐LCD Panel

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LCs capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA(240*320) resolution.

P-218L: Late-News Poster: A Compact and Cost-Efficient TFT-LCD through the Triple-Gate Pixel Structure

To realize a compact and cost-efficient TFT-LCD for PMP or CNS applications, we propose a 4.0″ WqVGA(480×272) a-Si TFT-LCD through the triple-gate pixel structure. By using the triple-gate pixel structure 1-chip TFT-LCD is available for CNS applications. and this 1-chip TFT-LCD cuts costs by fifteen percent, or more. A double Amorphous Silicon Gate(ASG) solves secondary problems such as short gate line time and small layout area which are caused by the triple-gate pixel structure.

ASG(amorphous silicon TFT gate driver circuit) technology for mobile TFT‐LCD panel

Abstract We developed an a‐Si TFT‐LCD panel with integrated gate driver circuit using a standard 5‐MASK process. To minimize the effect of the a‐Si TFT current and LCs capacitance variation with temperature, we developed a new a‐Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3‐side free panel structure in a‐Si TFT‐LCD of QVGA (240 × 320) resolution. And using double ASG structure the dead space of TFT‐LCD panel could be further decreased.