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Dive into the research topics where Jin Rui is active.

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Featured researches published by Jin Rui.


international conference on circuits | 2017

Improved trade-off characteristics of 3.3kV fast recovery diode with optimized carrier distribution used for power systems

Liu Yueyang; Jin Rui; Wu Di; He Yanqiang; Xu Zhe; He Feng; Dong Shaohua; Wen Jialiang; Zhao Yan; Pan Yan

This paper presents an innovative method to optimize the excess carrier distribution in 3.3kV fast recovery diodes (FRDs). The idea is to develop a structure that can effectively optimize the anode emission efficiency. Based on TCAD simulation, two new structures, namely, local emitter control (LEC) diode, local emitter control and local lifetime control (LELC) diode, have been developed with improved trade-off characteristics between reverse recovery current peak and forward voltage drop compared with conventional diodes. The LEC diodes demonstrate the improved trade-off characteristics through introducing a wavy-type P-body that produces a low minority carrier density at P-body/N-sub side and a high minority carrier density at N-sub/N+ side. Through introducing an addition local lifetime control layer in combination with a wavy-type p-body, the LELC diode has demonstrated the best balanced properties of the forward voltage drop(VF), the reverse recovery current peak(Irr), and the softness without at the expense of increasing leakage current. The forward voltage drop of LEC diode and LELC diode are respectively decreased by 23% and 35% compared with conventional diodes. The surge current of LELC diode is 2 times larger than that of conventional and LEC ones.


Archive | 2017

Fast recovery diode and manufacturing method thereof

Cao Gongxun; Wu Di; Liu Yueyang; He Yanqiang; Dong Shaohua; Xu Zhe; He Feng; Jin Rui; Wen Jialiang; Pan Yan


Archive | 2015

Manufacturing method of high-voltage quick-recovery diode

Wang Yaohua; Gao Wenyu; Liu Yueyang; Zhang Chong; Jin Rui; Yu Kunshan


Archive | 2013

Semiconductor device multistage field plate terminal structure and manufacturing method thereof

Gao Mingchao; Wang Yaohua; Liu Jiang; Zhao Ge; Jin Rui


Archive | 2016

Front electrode of crimping formula IGBTFRD chip

Gao Mingchao; Wang Yaohua; Liu Jiang; Zhao Ge; Jin Rui; Wen Jialiang; Pan Yan


Archive | 2016

Terminal passivation method and semiconductor power device

Wu Di; Liu Yueyang; He Yanqiang; Xu Zhe; Jin Rui; Wen Jialiang; Pan Yan


Archive | 2016

Manufacturing method for passivation layer and high-voltage semiconductor power device

He Yanqiang; Wu Di; Liu Yueyang; He Feng; Xu Zhe; Jin Rui; Wen Jialiang; Pan Yan


Archive | 2015

IGBT (Insulated Gate Bipolar Transistor) chip manufacturing method for crimped type package

Gao Mingchao; Wang Yaohua; Zhao Ge; Liu Jiang; Li Li; Jin Rui; Wen Jialiang


Archive | 2015

Planar-gate type IGBT

Zhao Ge; Wang Yaohua; Gao Mingchao; Liu Jiang; Jin Rui; Wen Jialiang


Archive | 2015

Planar gate IGBT with low-reverse transfer capacitance and anti-latch-up structure and manufacturing method of planar gate IGBT

Gao Mingchao; Wang Yaohua; Zhao Ge; Liu Jiang; Jin Rui; Wen Jialiang

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Dive into the Jin Rui's collaboration.

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Li Li

Beihang University

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Zhang Yu

Electric Power Research Institute

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Wu Yu

Beijing University of Technology

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Hu Dongqing

Beijing University of Technology

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Jia Yunpeng

Beijing University of Technology

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Li Zhe

Beijing University of Technology

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Tan Jian

Beijing University of Technology

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Zhao Bao

Beijing University of Technology

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Zhou Xuan

Beijing University of Technology

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Lei Haifeng

Beijing Jiaotong University

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