Jindřich Mach

Ultrasmooth metallic foils for growth of high quality graphene by chemical vapor deposition

Synthesis of graphene by chemical vapor deposition is a promising route for manufacturing large-scale high-quality graphene for electronic applications. The quality of the employed substrates plays a crucial role, since the surface roughness and defects alter the graphene growth and cause difficulties in the subsequent graphene transfer. Here, we report on ultrasmooth high-purity copper foils prepared by sputter deposition of Cu thin film on a SiO2/Si template, and the subsequent peeling off of the metallic layer from the template. The surface displays a low level of oxidation and contamination, and the roughness of the foil surface is generally defined by the template, and was below 0.6 nm even on a large scale. The roughness and grain size increase occurred during both the annealing of the foils, and catalytic growth of graphene from methane (≈1000 °C), but on the large scale still remained far below the roughness typical for commercial foils. The micro-Raman spectroscopy and transport measurements proved the high quality of graphene grown on such foils, and the room temperature mobility of the graphene grown on the template stripped foil was three times higher compared to that of one grown on the commercial copper foil. The presented high-quality copper foils are expected to provide large-area substrates for the production of graphene suitable for electronic applications.

In-situ observation of 〈110〉 oriented Ge nanowire growth and associated collector droplet behavior

Using in-situ microscopy, we show that germanium nanowires can be grown by a vapor-liquid-solid process in 〈110〉 directions both on Ge(100) and Ge(111) substrates if very low supersaturation in the collector droplet is ensured. This can be provided if thermal evaporation is utilized. Such a behavior is also in agreement with earlier chemical vapor deposition experiments, where 〈110〉 oriented wires were obtained for very small wire diameters only. Our conclusions are supported by in-situ observations of nanowire kinking towards 〈111〉 direction occurring more frequently at higher evaporation rates.

Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film

We present a straightforward method for fabrication of patterns of metallic nanostructures. The focused ion beam (FIB) lithography has been used to locally modify a native SiO2 layer on a silicon substrate. On the modified areas preferential nucleation of cobalt islands is observed. The cobalt islands formed upon deposition at 400–430 °C combined with an intermediate annealing at 550 °C have a uniform size distribution and their size can be controlled by the distance between the nucleation sites and the amount of deposited material. It is proposed that the island formation at patterned sites is due to reduced surface diffusion of Co atoms in the vicinity of FIB modified areas. The intermediate annealing improves the island morphology since the kinetic diffusion limits are lowered and system reconfigures toward its equilibrium state.

Nanometer-Sized Water Bridge and Pull-Off Force in AFM at Different Relative Humidities: Reproducibility Measurement and Model Based on Surface Tension Change

This article deals with the analysis of the relationship between the pull-off force measured by atomic force microscopy and the dimensions of water bridge condensed between a hydrophilic silicon oxide tip and a silicon oxide surface under ambient conditions. Our experiments have shown that the pull-off force increases linearly with the radius of the tip and nonmonotonically with the relative humidity (RH). The latter dependence generally consists of an initial constant part changing to a convex-concave-like increase of the pull-off force and finally followed by a concave-like decrease of this force. The reproducibility tests have demonstrated that the precision limits have to be taken into account for comparing these measurements carried out under atmospheric conditions. The results were fitted by a classical thermodynamic model based on water-bridge envelope calculations using the numerical solution of the Kelvin equation in the form of axisymmetric differential equations and consequent calculation of adhesive forces. To describe the measured data more precisely, a decrease of the water surface tension for low RH was incorporated into the calculation. Such a decrease can be expected as a consequence of the high surface curvature in the nanometer-sized water bridge between the tip and the surface.

An ultra-low energy (30-200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum.

The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (≈10(1) eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 10(1) eV and 10(1) nA/cm(2), respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.

Electronic transport properties of graphene doped by gallium

In this work we present the effect of low dose gallium (Ga) deposition (<4 ML) performed in UHV (10-7 Pa) on the electronic doping and charge carrier scattering in graphene grown by chemical vapor deposition. In situ graphene transport measurements performed with a graphene field-effect transistor structure show that at low Ga coverages a graphene layer tends to be strongly n-doped with an efficiency of 0.64 electrons per one Ga atom, while the further deposition and Ga cluster formation results in removing electrons from graphene (less n-doping). The experimental results are supported by the density functional theory calculations and explained as a consequence of distinct interaction between graphene and Ga atoms in case of individual atoms, layers, or clusters.

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20-200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ≈15 mm by one order of magnitude (j ≈ 1000 nA/cm(2)). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 °C) than in conventional metalorganic chemical vapor deposition technologies (≈1000 °C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Kelvin Probe Force Microscopy and Calculation of Charge Transport in a Graphene/Silicon Dioxide System at Different Relative Humidity

The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer-Emmett-Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM. In the computational part, a quantitative model based on solving the diffusion-like equation for the charge transport is used to fit the experimental data and thus to find the SiO2 surface resistivity ranging from 107 to 1010 Ω and exponentially decreasing with the RH increase. Such a behavior is explained using the formation of water layers predicted by the BET adsorption theory and electron-hopping theory that for the SiO2 surface patterned by AFM predicts a high water coverage even at low RHs.