Jine Zhang

Formation of p-type MgZnO by nitrogen doping

A wurtzite N-doped MgZnO film with 20at.% Mg (MgZnO:N) was grown by plasma-assisted molecular beam epitaxy on c-plane sapphire using radical NO as oxygen source and nitrogen dopant. The as-grown MgZnO:N film behaves n-type conduction at room temperature, but transforms into p-type conduction after annealed for 1h at 600°C in an O2 flow. The p-type MgZnO:N has a hole concentration of 6.1×1017cm−3 and a mobility of 6.42cm2∕Vs. X-ray photoelectron spectroscopy measurement indicates that substitution of N for O site is in forms of N atom (N)O and N molecule (N2)O for the as-grown MgZnO:N, but almost only in a form of (N)O for the annealed MgZnO:N. The mechanism of the conduction-type transition induced by annealing is discussed in the present work.

Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection

Zn0.76Mg0.24O p-n photodiode was fabricated on (000l) Al2O3 substrate by plasma-assisted molecular beam epitaxy. Ni∕Au and In metals deposited using vacuum evaporation were used as p-type and n-type contacts, respectively. Current-voltage measurements on the device showed weak rectifying behavior. The photodetectors exhibited a peak responsivity at around 325nm. The ultraviolet-visible rejection ratio (R325nm∕R400nm) of four orders of magnitude was obtained at 6V bias. The photodetector showed fast photoresponse with a rise time of 10ns and fall time of 150ns. In addition, the thermally limited detectivity was calculated as 1.8×1010cmHz1∕2∕W at 325nm, which corresponds to a noise equivalent power of 8.4×10−12W∕Hz1∕2 at room temperature.

Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at ∼290K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior.

p-type conductivity and donor-acceptor pair emission in Cd1−xFexS dilute magnetic semiconductors

Cd1−xFexS thin films with different Fe contents were grown on c-plane sapphire by low-pressure metal organic chemical vapor deposition. The resistivity of the thin films was found to increase with the addition of more Fe contents into the Cd1−xFexS thin films by elevating the growth temperature, which was attributed to the ionization of holes from trivalent Fe ions. High density Fe doping eventually reversed the conductivity of Cd1−xFexS thin film from n to p type. With increasing Fe content, the band-to-band transition at 2.5eV was suppressed while the emission from the donor-acceptor pairs at 2.0–2.4eV finally dominated the photoluminescence spectra.

Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy

The hole transport properties of nitrogen doped p-type ZnO grown on c-plane sapphire (c-Al2O3) were investigated by temperature-dependent Hall-effect measurements. The experimental Hall mobility was found to be considerably lower than the calculated mobility including ionized impurity scattering, acoustic-mode deformation potential scattering, piezoelectric potential scattering, and polar optical phonon scattering. Atomic force microscopy and x-ray diffraction measurements demonstrated that p-type ZnO on c-Al2O3 consisted of two kinds of 30°-rotated domains surrounded by grain boundaries. Thus, taking the effect of inhomogeneous microstructure on the mobility into account, the calculated mobility agreed favorably with the experimental data. This agreement indicates that besides ionized impurity and acoustic deformation potential scattering at low temperatures and the polar optical phonon scattering at high temperatures, the effects of the inhomogeneous microstructure in p-type ZnO films play a more import...

Micromagnetic simulation of the influence of grain boundary on cerium substituted Nd-Fe-B magnets

A three-dimensional finite element model was performed to study the magnetization reversal of (CexNd1-x)2Fe14B nanocomposite permanent magnets. The influences of volume fraction, width and performance parameters of the grain boundary (GB) composition on the coercivity were analyzed by the method of micromagnetic simulation. The calculation results indicate that the structure and chemistry of GB phase play important roles in Nd2Fe14B-based magnets. An abnormal increase in the value of coercivity is found to be connected with the GB phase, approximately when the percentage of doped cerium is between 20% and 30%. While the coercivity decreases directly with the increase in cerium content instead of being abnormal when there is no GB phase in magnets at all or the value of magnetocrystalline anisotropy or exchange integral is too large.

The magnetic properties of MMCo5 (MM=Mischmetal) nanoflakes prepared by multistep (three steps) surfactant-assisted ball milling

The hard magnetic MMCo5 nanoflakes with high coercivity and narrow size distribution have been successfully obtained by three steps surfactant-assisted ball milling (SABM). The magnetic properties, phase structure and morphology of these MMCo5 nanoflakes were studied in this work. The coercivity and the remanence ratio of MMCo5 nanoflakes reached to 5.89 kOe and 0.75, respectively. The X-ray powder diffraction (XRD) patterns indicated that the MMCo5 nanoflakes were CaCu5-type hexagonal crystal structure. The average thickness, in-plane size and aspect ratio reached to 20 nm, 0.9 μm and 60, respectively. The low cost and great properties of MMCo5 nanoflakes with a centralized thickness distribution could be the building blocks for the future high-performance nanocomposite permanent magnets with an enhanced energy product.

Structure and properties of sintered MM–Fe–B magnets

MM14Fe79.9B6.1 magnets were prepared by conventional sintering method. The Curie temperature of the sintered MM2Fe14B magnet was about 210 °C. When the sintering temperature increased from 1010 °C to 1030 °C, the density of the magnet increased from 6.85 g/cm3 to 7.52 g/cm3. After the first stage tempering at 900 °C, the (BH)max and Hcj had a slight increase. The maximum value of (BH)max = 7.6 MGOe and Hcj = 1080 Oe was obtained when sintered at 1010 °C and tempering at 900 °C, respectively. The grain size grew very large when the sintering temperature increased to 1050 °C, and the magnetic properties deteriorated rapidly. La reduced by ∼ 7.5 at. % in grains, which is almost equal to the increased percentage of Nd. That is mainly because La-Fe-B is very difficult to form the 2: 14: 1 phase.

Symmetry mismatch-driven perpendicular magnetic anisotropy for perovskite/brownmillerite heterostructures

Grouping different transition metal oxides together by interface engineering is an important route toward emergent phenomenon. Whilexa0most of the previous works focused on the interface effects in perovskite/perovskite heterostructures, here we reported on a symmetry mismatch-driven spin reorientation toward perpendicular magnetic anisotropy in perovskite/brownmillerite heterostructures, which is scarcely seen in tensile perovskite/perovskite heterostructures. We show that alternately stacking perovskite La2/3Sr1/3MnO3 and brownmilleritexa0LaCoO2.5 causes a strong interface reconstruction due to symmetry discontinuity at interface: neighboring MnO6 octahedra and CoO4 tetrahedra at the perovskite/brownmillerite interface cooperatively relax in a manner that is unavailable for perovskite/perovskite interface, leading toxa0distinct orbital reconstructions and thus the perpendicular magnetic anisotropy. Moreover, the perpendicular magnetic anisotropy is robust, with an anisotropy constant two orders of magnitude greater than the in-plane anisotropy of the perovskite/perovskite interface. The present work demonstrates the great potential of symmetry engineering in designing artificial materials on demand.Complex oxide heterostructures exhibit multifunctional behaviour that could be used in a range of device applications. Here, the authors observe that reconstruction at oxide perovskite/brownmillerite interfaces leads to perpendicular magnetic spin orientation, with potential use in spintronic devices.

Two-dimensional electron gas at manganite buffered LaAlO3/SrTiO3 (001) interface by spin coating chemical methods

High mobility spin-polarized two-dimensional electron gas (2DEG) is crucially important for spintronic applications. Here, we report our investigations on the 2DEG fabricated by spin coating a LaAlO3 layer on a (001) SrTiO3 substrate with a La2/3Sr1/3MnO3 buffer layer. When the buffer layer is below 3 uc, the 2DGE is highly mobile. Corresponding to the layer thicknesses of 0, 1, and 2 uc, the Hall mobilities are ∼24u2009000u2009cm2/V s, ∼28u2009000u2009cm2/V s, and ∼59u2009600u2009cm2/V s at 2u2009K. In contrast, the 2DEG with a buffer layer of 3 uc shows a relatively low mobility (∼3000u2009cm2/V s). However, an anomalous Hall effect was observed in this 2DEG below 20u2009K, indicating a long range ferromagnetic order. This work demonstrates the great potential of the chemical method in gaining high quality spin-polarized 2DEGs at the LaAlO3/SrTiO3 interface.