Jing-Yuan Lin

Novel Cu plating formula for filling through silicon vias

Through-silicon-via (TSV) technology has been employed for three-dimensional (3D) packaging of multi-chips. A high interwafer interconnect density can be achieved with a minor area penalty. Having shorter signal paths between dies make it possible to improve the systems performance by permitting the system to run faster, alleviate interconnect delay problems, it also consumes less power. Copper has been selected as the through-chop material because of its compatibility with conventional multilayer

A high temperature MEMS heater for optical sensors

Infrared light source is a key component in the optical sensing systems especially for the Fourier-Transformed Infrared (FTIR) or different kinds of gas sensor system. This paper proposes a novel method for generating a broadband wavelength infrared light source by MEMS heater based on silicon on insulator (SOI) technology. The enhanced long-tern stability has been achieved by a low electrical resistance SOI wafer. This novel MEMS heater can achieve over than 1000 °C. This MEMS heater could be integrated in micro sensing system such as metal oxide semiconductor and Non-dispersive infrared (NDIR) gas sensors.

A novel copper plating formula for through silicon holes filling in a center-up mode

In recent years, through wafer electrical connections have become important roles, which will be used in developing high-speed, compact 3D microelectronic devices in next generation. Although the electroplating copper is a well-established process, completely void-free electroplating in through silicon holes (TSH) with a high aspect ratio remains a big challenge. Naturally, local current distribution is not uniform from the hole opening to the hole center during traditional electroplating. Therefore, voids were easily formed in TSH after traditional electroplating. In this paper, using this center-up technique, we demonstrate successful filling of though holes with an aspect ratio of 7.6. A novel copper plating formula composed of a special inhibitor achieved void-free copper could fill in TSH. Due to this special adsorption and inhibition of the new additive (VF-S), that have resulted in a concentration gradient of VF-S from the hole opening to the center, the center-up filling mode was carried out, meaning that copper pillars can be directly formed by copper electroplating without the need of a conducting template assembly.