Jingdong Xiao

Pyrolytic carbon free-radical evolution and irradiation damage of polyimide under low-energy proton irradiation

Ionization and displacement effects are basic phenomena in damage processes of materials under space-particle irradiation. In this paper, the damage behaviors were investigated on the polyimide under proton irradiation using electron paramagnetic resonance (EPR) spectra analysis and optical absorbance valuation. The results indicate that the proton irradiation induces the formation of pyrolytic carbon free-radical with a g value of 2.0025, and the population of free radicals increases with the irradiation fluence. The most important finding is that the irradiation-induced free-radical population increases linearly with the displacement damage dose, as does the optical degradation, whereas the ionization effect alone, during the irradiation, cannot induce the formation of pyrolytic carbon free radical. Furthermore, during the post storage, after irradiation, the free-radical population decreases following a sum of an exponential and a linear mode with the storage time. It is interesting that, during the po...

Radiation effects on optical and structural properties of GG17 Glasses induced by 170 keV electrons and protons

The effects of 170 keV electron and proton irradiation are investigated on the optical property and the structure of GG17-type borosilicate glasses for the purpose of assessing the suitability of this material for the rubidium lamp envelope, based on GEANT4 simulating calculation, using electron paramagnetic resonance and Fourier transform infrared spectra and optical-transmittance measurements. The Micro-mechanisms on damage of GG17 Glasses are clarified for electron and proton, respectively. For the electron with the energy of 170 keV, defect creation is due to ionization energy losses and the center is mainly boron oxygen hole center (BOHC) formed by one hole trapped on a bridge oxygen structure with [BO4]−. As a result the number of BOHCs grows as the electron fluence increases. However, for the proton with the energy of 170 keV, the creation of structural defects dominates by means of debonding as a result of an atom having been kicked off the structural chain (displacement effect). This leads to the...

Time resolved photoluminescence studies of degradation in GaInP/GaAs/Ge solar cells after 1MeV electron irradiation

Time resolved photoluminescence (TRPL) is a powerful method to character the behaviors of carriers as it has high time resolution that could reflect the reactions of carriers within nanoseconds. For solar cells, minority carrier lifetime is the most important parameter. TRPL has been used to measure the lifetime for uniform materials. However, for homojunction solar cells, doping distribution and carrier drift make the spectroscopy analysis much difficult. Thus one dimension numerical calculations are used to study the time-dependent photoluminescence (TRPL) decay of GaAs sub-cell in GaInP/GaAs/Ge solar cells. Calculation shows that both lifetime of minorities and light intensities could determine the line shape of TRPL. The bimolecular recombination under high injection modifies the curve from single-exponential to non-single-exponential one. For TRPL of homojunction solar cell, the photoluminescence decay process is not synchronized in all parts, and the decay is fast in emitter but slower in base regions. To get the lifetimes of minority carriers after 1MeV electron irradiation, carrier generation parameter G0 should be fitted by numerical method firstly. The damage factor Kτ=4.8×10-15 cm2/ns is fitted from TRPL results. Photoluminescence spectra (PL) are also used to get Kτ=5.5×10-15 cm2/ns which is similar with the value obtained from TRPL.Time resolved photoluminescence (TRPL) is a powerful method to character the behaviors of carriers as it has high time resolution that could reflect the reactions of carriers within nanoseconds. For solar cells, minority carrier lifetime is the most important parameter. TRPL has been used to measure the lifetime for uniform materials. However, for homojunction solar cells, doping distribution and carrier drift make the spectroscopy analysis much difficult. Thus one dimension numerical calculations are used to study the time-dependent photoluminescence (TRPL) decay of GaAs sub-cell in GaInP/GaAs/Ge solar cells. Calculation shows that both lifetime of minorities and light intensities could determine the line shape of TRPL. The bimolecular recombination under high injection modifies the curve from single-exponential to non-single-exponential one. For TRPL of homojunction solar cell, the photoluminescence decay process is not synchronized in all parts, and the decay is fast in emitter but slower in base regio...

Formation of E’γ Centers Under Electron Irradiation in Ultrapure Glass and Structural Relaxation

The processes of defect formation and evolution in ultrapure glass under 1 MeV electron irradiation were investigated by the measurement of electron paramagnetic resonance (EPR) spectra and optical absorbance. The results show that the 1 MeV electron irradiation of the ultrapure glass can induce the formation of E’γ centers, and the structure of the E’γ center transform from E’γ(1) center to E’γ(2) center with the increasing irradiation fluence, and this variation also affects the defect optical absorption property in the material. During the room temperature aging process, the defects anneal process induces the recovery of the optical property of the ultrapure glass. It is worth to note that the defect structure varied during the ageing process, namely, the E’γ(2) center transform to E’γ(1) center, and the variation of the defect structure induced the no synchronous property between the defect anneal and the optical absorption recovery.