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Featured researches published by Jingsi Qiao.


Nature Communications | 2014

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus

Jingsi Qiao; Xianghua Kong; Zhixin Hu; Feng Yang; Wei Ji

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we present a detailed theoretical investigation of the atomic and electronic structure of few-layer black phosphorus (BP) to predict its electrical and optical properties. This system has a direct bandgap, tunable from 1.51 eV for a monolayer to 0.59 eV for a five-layer sample. We predict that the mobilities are hole-dominated, rather high and highly anisotropic. The monolayer is exceptional in having an extremely high hole mobility (of order 10,000 cm2 V−1 s−1) and anomalous elastic properties which reverse the anisotropy. Light absorption spectra indicate linear dichroism between perpendicular in-plane directions, which allows optical determination of the crystalline orientation and optical activation of the anisotropic transport properties. These results make few-layer BP a promising candidate for future electronics.


Physical Review Letters | 2016

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

Yuhan Zhang; Jingsi Qiao; Si Gao; Fengrui Hu; Daowei He; Bing Wu; Ziyi Yang; B. Xu; Yun Li; Yi Shi; Wei Ji; Peng Wang; Xiaoyong Wang; Min Xiao; Hangxun Xu; Jianbin Xu; Xinran Wang

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.


Advanced Materials | 2016

Extraordinarily Strong Interlayer Interaction in 2D Layered PtS2

Yuda Zhao; Jingsi Qiao; Peng Yu; Zhixin Hu; Ziyuan Lin; S. P. Lau; Zheng Liu; Wei Ji; Yang Chai

Platinum disulfide (PtS2 ), a new member of the group-10 transition-metal dichalcogenides, is studied experimentally and theoretically. The indirect bandgap of PtS2 can be drastically tuned from 1.6 eV (monolayer) to 0.25 eV (bulk counterpart), and the interlayer mechanical coupling is almost isotropic. It can be explained by strongly interlayer interaction from the pz orbital hybridization of S atoms.


Advanced Materials | 2017

High-Electron-Mobility and Air-Stable 2D Layered PtSe2 FETs

Yuda Zhao; Jingsi Qiao; Zhihao Yu; Peng Yu; Kang Xu; S. P. Lau; Wu Zhou; Zheng Liu; Xinran Wang; Wei Ji; Yang Chai

The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2 . The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2 a versatile electronic 2D layered material.


Nanoscale | 2016

Interlayer electronic hybridization leads to exceptional thickness-dependent vibrational properties in few-layer black phosphorus

Zhixin Hu; Xianghua Kong; Jingsi Qiao; B. Normand; Wei Ji

Stacking two-dimensional (2D) materials into multi-layers or heterostructures, known as van der Waals (vdW) epitaxy, is an essential degree of freedom for tuning their properties on demand. Few-layer black phosphorus (FLBP), a material with high potential for nano- and optoelectronics applications, appears to have interlayer couplings much stronger than graphene and other 2D systems. Indeed, these couplings call into question whether the stacking of FLBP can be governed only by vdW interactions, which is of crucial importance for epitaxy and property refinement. Here, we perform a theoretical investigation of the vibrational properties of FLBP, which reflect directly its interlayer coupling, by discussing six Raman-observable phonons, including three optical, one breathing and two shear modes. With increasing sample thickness, we find anomalous redshifts of the frequencies for each optical mode but a blueshift for the armchair shear mode. Our calculations also show splitting of the phonon branches, due to anomalous surface phenomena, and strong phonon-phonon coupling. By computing uniaxial stress effects, inter-atomic force constants and electron densities, we provide a compelling demonstration that these properties are the consequence of strong and highly directional interlayer interactions arising from the electronic hybridization of the lone electron-pairs of FLBP, rather than from vdW interactions. This exceptional interlayer coupling mechanism controls the stacking stability of BP layers and thus opens a new avenue beyond vdW epitaxy for understanding the design of 2D heterostructures.


Frontiers of Physics in China | 2014

Correlation of interfacial bonding mechanism and equilibrium conductance of molecular junctions

Zhanyu Ning; Jingsi Qiao; Wei Ji; Hong Guo

We report theoretical investigations on the role of interfacial bonding mechanism and its resulting structures to quantum transport in molecular wires. Two bonding mechanisms for the Au-S bond in an Au(111)/1,4-benzenedithiol(BDT)/Au(111) junction were identified by ab initio calculation, confirmed by a recent experiment, which, we showed, critically control charge conduction. It was found, for Au/BDT/Aujunctions, the hydrogen atom, bound by a dative bond to the Sulfur, is energetically non-dissociativeafter the interface formation. The calculated conductance and junction breakdown forces of H-non-dissociative Au/BDT/Au devices are consistent with the experimental values, while the H-dissociated devices, with the interface governed by typical covalent bonding, give conductance more than an order of magnitude larger. By examining the scattering states that traverse the junctions, we have revealed that mechanical and electric properties of a junction have strong correlation with the bonding configuration. This work clearly demonstrates that the interfacial details, rather than previously believed many-body effects, is of vital importance for correctly predicting equilibrium conductance of molecular junctions; and manifests that the interfacial contact must be carefully understood for investigating quantum transport properties of molecular nanoelectronics.


Science Advances | 2017

Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride

Daowei He; Jingsi Qiao; Linglong Zhang; Junya Wang; Tu Lan; Jun Qian; Yun Li; Yi Shi; Yang Chai; Wei Lan; Luis K. Ono; Yabing Qi; Jianbin Xu; Wei Ji; Xinran Wang

An ultimate monolayer of 2D organic crystal can deliver high OTFT performance and be a clean system to investigate device physics. Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm2/Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C8-BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.


Nano Research | 2017

Deriving phosphorus atomic chains from few-layer black phosphorus

Zhangru Xiao; Jingsi Qiao; Wanglin Lu; Guojun Ye; Xianhui Chen; Ze Zhang; Wei Ji; Jixue Li; Chuanhong Jin

Phosphorus atomic chains, the narrowest nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP-based one-dimensional (1D) nano-electronics components. In this study, we report a top-down route for the preparation of phosphorus atomic chains via electron beam sculpturing inside a transmission electron microscope (TEM). The growth and dynamics (i.e., rupture and edge migration) of 1D phosphorus chains are experimentally captured for the first time. Furthermore, the dynamic behavior and associated energetics of the as-formed phosphorus chains are further investigated by density functional theory (DFT) calculations. It is hoped that these 1D BP structures will serve as a novel platform and inspire further exploration of the versatile properties of BP.


Chinese Physics B | 2017

Geometric stability and electronic structure of infinite and finite phosphorus atomic chains

Jingsi Qiao; Linwei Zhou; Wei Ji

One-dimensional mono- or few-atomic chains were successfully fabricated in a variety of two-dimensional materials, like graphene, BN, and transition metal dichalcogenides, which exhibit striking transport and mechanical properties. However, atomic chains of black phosphorus (BP), an emerging electronic and optoelectronic material, is yet to be investigated. Here, we comprehensively considered the geometry stability of six categories of infinite BP atomic chains, transitions among them, and their electronic structures. These categories include mono- and dual-atomic linear, armchair, and zigzag chains. Each zigzag chain was found to be the most stable in each category with the same chain width. The mono-atomic zigzag chain was predicted as a Dirac semi-metal. In addition, we proposed prototype structures of suspended and supported finite atomic chains. It was found that the zigzag chain is, again, the most stable form and could be transferred from mono-atomic armchair chains. An orientation dependence was revealed for supported armchair chains that they prefer an angle of roughly 35°–37° perpendicular to the BP edge, corresponding to the [110] direction of the substrate BP sheet. These results may promote successive research on mono- or few-atomic chains of BP and other two-dimensional materials for unveiling their unexplored physical properties.


Chemistry of Materials | 2016

Interaction of Black Phosphorus with Oxygen and Water

Yuan Huang; Jingsi Qiao; Kai He; Stoyan Bliznakov; Eli Sutter; Xianjue Chen; Da Luo; Fanke Meng; Dong Su; Jeremy Decker; Wei Ji; Rodney S. Ruoff; Peter Sutter

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Wei Ji

Renmin University of China

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Yang Chai

Hong Kong Polytechnic University

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Cong Wang

Renmin University of China

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Yuhao Pan

Renmin University of China

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Zhixin Hu

Renmin University of China

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Feng Yang

Renmin University of China

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Linwei Zhou

Renmin University of China

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