Jingyue Wang

Synthesis and photoluminescence properties of semiconductor nanowires

GaSe and Si nanowires (SiNWs) were synthesized by physical evaporation. The photoluminescence (PL) properties of the Si nanowires were investigated in correlation with the diameter of the crystalline core. Intensive light emission was observed peaking at dark red, green and blue regions for the as grown and partially oxidized SiNW samples. The red PL emission is ascribed to the quantum confinement effect of the crystalline core of the SiNWs, while the green and blue ones are attributed to the radiative recombination of the defect centers in the amorphous silicon oxide layer surrounding the SiNWs.

Body mass index and the risk of all-cause mortality among patients with nonvalvular atrial fibrillation: a multicenter prospective observational study in China

{\mathrm{ZrTe}}_{5}

Photoexcited carrier diffusion dependence of differential reflection dynamics in InAsxP1−xInP (x ≤ 0.35) strained-multiple-quantum wells

is a newly discovered topological material. Shortly after a single layer

Effect of interface roughness and well width on differential reflection dynamics in InGaAs/InP quantum wells

{\mathrm{ZrTe}}_{5}

Vanishing quantum oscillations in Dirac semimetal ZrTe5

had been predicted to be a two-dimensional topological insulator, a handful of experiments have been carried out on bulk

Reply to ‘Body mass index and the risk of all-cause mortality among patients with nonvalvular atrial fibrillation: a multicenter prospective observational study in China; methodological issues’

{\mathrm{ZrTe}}_{5}

Erratum: “Nanoscale silicon wires synthesized using simple physical evaporation” [Appl. Phys. Lett. 72, 3458 (1998)]

crystals, which however suggest that its bulk form may be a three-dimensional topological Dirac semimetal. We report a transport study on ultrathin

Optical Property Characterization of Silicon Quantum Wires

{\mathrm{ZrTe}}_{5}

Ga2O3 nanowires prepared by physical evaporation

flakes down to 10 nm. A significant modulation of the characteristic resistivity maximum in the temperature dependence by thickness has been observed. Remarkably, the metallic behavior, occurring only below about 150 K in bulk, persists to over 320 K for flakes less than 20 nm thick. Furthermore, the resistivity maximum can be greatly tuned by ionic gating. Combined with the Hall resistance, we identify contributions from a semiconducting and a semimetallic band. The enhancement of the metallic state in thin flakes are a consequence of shifting of the energy bands. Our results suggest that the band structure sensitively depends on the film thickness, which may explain the divergent experimental observations on bulk materials.