Jingzhou Yan

A model for optimization of the performance of frequency-Modulated DFB semiconductor laser

We have developed a model of frequency modulated distributed feedback laser with intracavity phase modulator and have shown that it can operate in two different regimes, only one of which has good frequency-modulated (FM) response. We have identified the combination of the laser parameters that forces laser to operate in high FM efficiency regime. The results of our initial experiments support these conclusions.

InGaAsP-InP dual-wavelength bipolar cascade lasers

We report the demonstration of an InGaAsP-InP-based dual-wavelength bipolar cascade laser. Simultaneous dual-wavelength (1350 and 1450 nm) output at room temperature using pulsed excitation is achieved by epitaxially connecting two different active regions with a low area specific resistance (~10-4 Omegacm2) InAlAs-InP hetero-tunnel-junction. By connecting more active regions together, ultrabroadband gain materials may be obtained

Optimization of the performance of frequency-modulated DFB semiconductor laser: theory and experiment

We have developed a model of frequency modulated DFB laser with intra-cavity phase modulator and identified the combination of parameters leading to high FM efficiency. The results of our initial experiments support these conclusions.

Fast frequency tuning characteristics of a FM laser based on the integrated MQW DFB laser/EA modulator device

Using the selective-area-growth (SAG) technique we have recently successfully fabricated FM lasers based on the integrated DFB/EA modulator devices. The InGaAs/InGaAsP MQW device with a separate confined heterostructure (SCH) and a planar semiinsulating buried-heterostructure (BH), was grown in one primary growth by low-pressure MOCVD. The lasing wavelength is around 1.551 /spl mu/m.

High-efficiency InP based four-junction solar cells

In this paper, we simulated and calculated expected efficiency of proposed four-junction solar cells. The InGaAs, AlAsSb, AlInAs and AlGalnAs four-junction solar cells system has a potential to achieve high efficiencies, and can be manufacturable. We fabricated and tested an AlInGaAs(1.0 eV) solar cell.

Very low threshold, carrier- and index-confined semiconductor lasers by one single selective-area-growth

We demonstrated very low threshold carrier- and index-confined semiconductor lasers made of a single selective-area-growth without regrowths. The threshold current is as low as 2.7 mA with excellent uniformity and reproducibility.

InGaAsP/InP dual wavelength bipolar cascade lasers with 100 nm wavelength spacing

Simultaneous dual-wavelength (1350 nm and 1450 nm) lasing is achieved from an InGaAsP/InP bipolar cascade laser, which includes two different active regions and a low resistance hetero-tunnel-junction. Ultra-broadband gain materials can be obtained with such a structure.

A new open-hole buried heterostructure process for the fabrication of photonic integrated circuits

We have successfully fabricated several batches of open-hole buried heterostructure (BH) lasers using self-align technique with a hole of about 3 /spl mu/m opening. This new processing technology have in the active region, a traditional buried heterostructure (BH) with semiinsulating InP which works as a current block material. While in the passive region, the semiinsulating InP is the waveguide cladding material. The proposed method is very important for integrated photonic devices. Using this method we will be able to develop sophisticated photonic circuits with very good performance for future optical networking applications.