Jinhwan Lee

Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 10(5), a mobility of 0.12 cm(2) V(-1) s(-1) (mean mobility value of 0.07 cm(2) V(-1) s(-1)), and reliable operation.

Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS2 films prepared with chemical vapor deposition (CVD) on SiO2 substrates with the number of film layers. Wafer-scale CVD MoS2 films with 2, 4, and 12 layers were fabricated on SiO2, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS2 films increases by ∼0.15 eV when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with in-situ annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the su...

Low‐Temperature Synthesis of Large‐Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma‐Enhanced Chemical Vapor Deposition

By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2 ) thin film is synthesized directly on a wafer-scale plastic substrate at below 300 °C. The carrier mobility of the films is 3.74 cm(2) V(-1) s(-1) . Also, humidity is successfully detected with MoS2 -based sensors fabricated on the flexible substrate, which reveals its potential for flexible sensing devices.

Hemifacial spasm: neurovascular compressive patterns and surgical significance

SummaryBackground. The aim of this study was to report further investigation of neurovascular compression as a cause of hemifacial spasm (HFS) and to provide useful surgical guidelines by describing the compression patterns.Material and methods. From January 2004 to February 2006, 236 consecutive patients with HFS underwent microvascular decompression (MVD) in a single centre. Based on the operation and medical records, the intraoperative findings and post-operative outcomes were obtained and analysed.Results. We found that 95.3% of lesions had accompanying causative factors that made the neurovascular compression inevitable. Based on the contributing factors, compression patterns were categorised into six different types including: loop (n = 11: 4.6%), arachnoid (n = 66: 27.9%), perforator (n = 58: 24.6%), branch (n = 18: 7.6%), sandwich (n = 28: 11.9%), and tandem (n = 52: 22.0%). The compression patterns were significantly correlated with the compressing vessels involved. Thirty-two (86.5%) of 37 lesions where the vertebral artery was the compressing vessel involved the tandem type. Anterior inferior cerebellar artery was the compressing vessel involved in 49 (84.5%) of 58 perforator type compressions, while posterior inferior cerebellar artery was the compressing vessel involved in 8 (72.7%) of 11 loop type compressions.Conclusions. Once the compressing vessel responsible for the neurovascular compression are identified, the probable pattern of compression can be anticipated; this knowledge could facilitate the application of the appropriate operative procedures and minimise post-operative complications.

Field-effect Transistor with a Chemically Synthesized MoS2 Sensing Channel for Label-Free and Highly Sensitive Electrical Detection of DNA Hybridization

A field-effect transistor (FET) with two-dimensional (2D) few-layer MoS2 as a sensing-channel material was investigated for label-free electrical detection of the hybridization of deoxyribonucleic acid (DNA) molecules. The high-quality MoS2-channel pattern was selectively formedthrough the chemical reaction of the Mo layer with H2S gas. The MoS2 FET was very stable in an electrolyte and inert to pH changes due to the lack of oxygen-containing functionalities on the MoS2 surface. Hybridization of single-stranded target DNA molecules with single-stranded probe DNA molecules physically adsorbed on the MoS2 channel resulted in a shift of the threshold voltage (Vth) in the negative direction and an increase in the drain current. The negative shift in Vth is attributed to electrostatic gating effects induced by the detachment of negatively charged probe DNA molecules from the channel surface after hybridization. A detection limit of 10 fM, high sensitivity of 17 mV/dec, and high dynamic range of 106 were achieved. The results showed that a bio-FET with an ultrathin 2D MoS2 channel can be used to detect very small concentrations of target DNA molecules specifically hybridized with the probe DNA molecules.

Ultraclean and Direct Transfer of a Wafer‐Scale MoS2 Thin Film onto a Plastic Substrate

An ultraclean method to directly transfer a large-area MoS2 film from the original growth substrate to a flexible substrate by using epoxy glue is developed. The transferred film is observed to be free of wrinkles and cracks and to be as smooth as the film synthesized on the original substrate.

Structural and Optical Properties of Single- and Few-Layer Magnetic Semiconductor CrPS4

Atomically thin binary two-dimensional (2D) semiconductors exhibit diverse physical properties depending on their composition, structure, and thickness. By adding another element in these materials, which will lead to formation of ternary 2D materials, the property and structure would greatly change and significantly expanded applications could be explored. In this work, we report structural and optical properties of atomically thin chromium thiophosphate (CrPS4), a ternary antiferromagnetic semiconductor. Its structural details were revealed by X-ray and electron diffraction. Transmission electron microscopy showed that preferentially cleaved edges are parallel to diagonal Cr atom rows, which readily identified their crystallographic orientations. Strong in-plane optical anisotropy induced birefringence that also enabled efficient determination of crystallographic orientation using polarized microscopy. The lattice vibrations were probed by Raman spectroscopy and exhibited significant dependence on thickness of crystals exfoliated down to a single layer. Optical absorption determined by reflectance contrast was dominated by d-d-type transitions localized at Cr3+ ions, which was also responsible for the major photoluminescence peak at 1.31 eV. The spectral features in the absorption and emission spectra exhibited noticeable thickness dependence and hinted at a high photochemical activity for single-layer CrPS4. The current structural and optical investigation will provide a firm basis for future study and application of this kind of atomically thin magnetic semiconductors.