Jinming Wang

Highly Efficient Photocatalytic Hydrogen Evolution by ReS2 via a Two‐Electron Catalytic Reaction

Highly efficient photocatalytic hydrogen evolution (PHE) is highly desirable for addressing the global energy crisis and environmental problems. Although much attention has been given to electron-hole separation, ridding photocatalysts of poor efficiency remains challenging. Here, a two-electron catalytic reaction is developed by utilizing the distinct trion behavior of ReS2 and the efficient reduction of two H+ (2H+ + 2e- → H2 ) is realized. Due to the monolayer-like structure of the catalyst, the free electrons in ReS2 can be captured by the tightly bound excitons to form trions consisting of two electrons and one hole. These trions can migrate to the surface and participate in the two-electron reaction at the abundant active sites. As expected, such a two-electron catalytic reaction endows ReS2 with a PHE rate of 13 mmol g-1 h-1 under visible light irradiation. Meanwhile, this reaction allows the typically poor PHE efficiency of pure transition metal dichalcogenides to be overcome. The proposed two-electron catalytic reaction provides a new approach to the design of photocatalysts for PHE.

Effect of trimethylgallium flow on the structural and optical properties of InGaN/GaN multiple quantum wells

InGaN/GaN multiple quantum wells (MQWs) are grown by metal-organic chemical vapour deposition on (0001) sapphire substrates. Triple-axis X-ray diffraction (TXRD) and photoluminescence (PL) spectra are used to assess the influence of trimethylgallium (TMGa) flow on structural defects, such as dislocations and interface roughness, and the optical properties of the MQWs. In this paper, a method, involving an ! scan of every satellite peak of TXRD, is presented to measure the mean dislocation density of InGaN/GaN MQWs. The experimental results show that under certain conditions which keep the trimethlyindium flow constant, dislocation density and interface roughness decrease with the increase of TMGa flow, which will improve the PL properties. It can be concluded that dislocations, especially edge dislocations, act as nonradiative recombination centres in InGaN/GaN MQWs. Also noticed is that changing the TMGa flow has more influence on edge dislocations than screw dislocations.