Jino Im

Thermoelectric heating of Ge2Sb2Te5 in phase change memory devices

We report on the demonstration of the active thermoelectric application to nanometer-scaled semiconductor devices. The thermoelectric heating already exists during programming in conventional phase change memory (PRAM) cells, which is only a minor supplement to Joule heating. Here, by rigorously designing devices, we have demonstrated an unprecedentedly high efficiency of PRAM, where the majority of the heat is supplied by the thermoelectric effect.

Chemical state and atomic structure of Ge2Sb2Te5 system for nonvolatile phase-change random access memory

We present chemical state information on contamination-free Ge2Sb2Te5 thin film using high-resolution x-ray photoelectron spectroscopy (HRXPS) and the corresponding theoretical understanding of the chemical states, on both amorphous and metastable phases, illuminating the phase-change mechanism of the system. HRXPS data revealed that the Sb 4d shallow core level was split into two components having different binding energies and that the spin-orbit splitting feature of the Ge 3d level was enhanced as the system became metastable. Negligible change was observed in the Te 4d shallow core level, and in contrary to the previous report’s prediction less change in valance band spectra was observed. The results imply that Sb movement is also involved in the phase-change mechanism and that acquisition of shallow core-level spectra can be a useful measure for understanding phase-change mechanism. Hydrogenated SbTe6 octahedral-like cluster model was introduced to schematically interpret the generation of the two co...

Spin-orbital entangled molecular j eff states in lacunar spinel compounds

The entanglement of the spin and orbital degrees of freedom through the spin-orbit coupling has been actively studied in condensed matter physics. In several iridium oxide systems, the spin-orbital entangled state, identified by the effective angular momentum jeff, can host novel quantum phases. Here we show that a series of lacunar spinel compounds, GaM4X8 (M=Nb, Mo, Ta and W and X=S, Se and Te), gives rise to a molecular jeff state as a new spin-orbital composite on which the low-energy effective Hamiltonian is based. A wide range of electron correlations is accessible by tuning the bandwidth under external and/or chemical pressure, enabling us to investigate the cooperation between spin-orbit coupling and electron correlations. As illustrative examples, a two-dimensional topological insulating phase and an anisotropic spin Hamiltonian are investigated in the weak and strong coupling regimes, respectively. Our finding can provide an ideal platform for exploring jeff physics and the resulting emergent phenomena.

Nanometer-scale loop currents and induced magnetic dipoles in carbon nanotubes with defects.

In metallic carbon nanotubes with defects, the electric current flow is expected to have characteristic spatial patterns depending on the nature of the defects. Here, we show, using first-principles transport calculations, that locally rotating loop currents in nanometer scale can be generated near defects in carbon nanotubes by quantum interference of conducting and quasi-bound states of electrons. The loop currents appear at energies near transmission dips, having opposite directions at lower- and higher-energy sides of the transmission dips and disappearing exactly at the centers of the dips. Temporal modulations of gate voltage around a transmission dip can produce oscillating magnetic dipoles, inducing magnetic fields that reflect characteristics of defects. This generation of loop currents and magnetic dipoles by quantum interference can generally occur in any nanostructure and it is potentially useful for novel electronic and magnetic nanodevices.