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Featured researches published by Jitao Li.


AIP Advances | 2017

Effects of aging time and annealing temperature on structural and optical properties of sol-gel ZnO thin films

Jitao Li; Dingyu Yang; Xinghua Zhu

The ZnO thin films have been prepared by sol-gel method at different annealing temperatures and aging time. The structural properties of ZnO thin films were investigated by X-ray diffraction (XRD) patterns and atomic force microscope (AFM) images. The results indicated that the film possess a hexagonal wurtzite structure with preferred orientation along the (002) direction. The crystalline quality of films improved with increasing post-annealing temperature, while gradually worsened with prolonging aging time. The optical properties of ZnO thin films were studied by the ultra-violet transmittance (UV-Vis) and photoluminescence (PL) spectra. The variations of UV-Vis transmittance and energy gap accorded well with the tendency presented in XRD patterns and AFM images. The PL spectra appeared the apparent ultraviolet emission and visible emissions. As the annealing temperature increased, the ultraviolet and visible emissions of films enhanced and decreased respectively. However, as the sol aging time prolong...


Journal of Sol-Gel Science and Technology | 2017

Structural and optical properties of nano-crystalline ZnO thin films synthesized by sol–gel method

Jitao Li; Dingyu Yang; Xinghua Zhu; Hui Sun; Xiuying Gao; Peihua Wangyang; Haibo Tian

Nano-crystalline ZnO thin films on glass substrates have been prepared by sol–gel method at annealing temperatures of 300–550 °C. Zinc acetate, anhydrous ethanol, and mono-ethanolamine were used as raw materials. The thermal behaviors curves of the dried gel were examined and found that evaporation of solvent and the decomposition of the organics have completed before 250 °C. The effect of thermal annealing on structural and optical properties was investigated. X-ray diffraction patterns showed the gradual increase in orientation of (0 0 2) along c-axis. The transmittance spectra revealed the high transmission (T > 80% above annealing 400 °C) in visible region. The optical band gap (Eg) of the samples is in the range from 3.24 to 3.28 eV. The photoluminescence spectra in ultraviolet were studied and found the continuous increased intensity of peaks at 387 and 393 nm respectively from intrinsic emission and near the band edge emission. Surface micrographs was observed by the atomic force microscopy and found the larger grain size and the compacter morphology before 500 °C. However, the excessive annealing temperature at 550 °C deteriorated the structural and optical properties of the samples.Graphical AbstractThe transmittance is still enhanced as rising annealing temperature up to 500 °C which is more attributed to the decrease in grain boundaries and defect concentration. The poor transmission of films annealed at low temperatures is attributed to unsatisfactory crystalline quality. The stable and high transparency (>80%) in the visible region is presented above 400 °C. The UV–Vis transmittance spectra of ZnO thin films at different annealing temperature.


Materials | 2018

Investigations on Structural, Optical and X-Radiation Responsive Properties of a-Se Thin Films Fabricated by Thermal Evaporation Method at Low Vacuum Degree

Jitao Li; Xinghua Zhu; Dingyu Yang; Peng Gu; Haihua Wu

Amorphous selenium (a-Se) thin films with a thickness of 1200 nm were successfully fabricated by thermal evaporation at a low vacuum degree of 10−2 Pa. The structural properties involving phase and morphology showed that a-Se thin films could be resistant to 60 °C in air. Also, a transformation to polycrystalline Selenium (p-Se) was shown as the annealing temperature rose to 62 °C and 65 °C, with obvious changes in color and surface morphology. Moreover, as the a-Se transformed to p-Se, the samples’ transmittance decreased significantly, and the band gap declined dramatically from 2.15 eV to 1.92 eV. Finally, the X-radiation response of a-Se was investigated as an important property, revealing there is a remarkable response speed of photogeneration current both X-ray on and X-ray off, with a requirement of only a very small electrical field.


AIP Advances | 2017

Influence of substrate on structural, morphological and optical properties of TiO2 thin films deposited by reaction magnetron sputtering

Xinghua Zhu; Peng Gu; Haihua Wu; Dingyu Yang; Hui Sun; Peihua Wangyang; Jitao Li; Haibo Tian

Titanium dioxide (TiO2) films have been prepared by DC reaction magnetron sputtering technique on different substrates (glass, SiO2, platinum electrode-Pt, Silicon-Si). X-ray diffraction (XRD) patterns showed that all TiO2 films were grown along the preferred orientation of (110) plane. Samples on Si and Pt substrates are almost monophasic rutile, however, samples on glass and SiO2 substrates accompanied by a weak anatase structure. Atomic force microscopy (AFM) images revealed uniform grain distribution except for films on Pt substrates. Photoluminescence (PL) spectra showed obvious intrinsic emission band, but films on glass was accompanied by a distinct defect luminescence region. Raman spectroscopy suggested that all samples moved to high wavenumbers and films on glass moved obviously.


Functional Materials Letters | 2016

Effects of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

Jitao Li; Dinyu Yang; Xinghua Zhu; Hui Sun; Xiuying Gao; Peihua Wangyang; Haibo Tian

ZnO thin films have been prepared by sol–gel method in this paper. Zinc acetate, ethanol and mono-ethanolamine (MEA) were used as a metal precursor, solvent and stabilizer, respectively. The structural and optical properties of ZnO thin films were investigated and found to be strongly dependent on the annealing temperature. X-ray diffraction patterns revealed that as the annealing temperature increased, the crystalline quality of the samples became better. The atomic force microscope images of the samples show larger and compact grains at higher heat-treating temperature. The ultraviolet–visible transmittance spectra indicated that as the temperature increased, the transmittance improved and the energy gap became larger (from 3.11eV at 400∘C to 3.22eV at 500∘C). The photoluminescence spectra presented a variety of emission peaks, two strong peaks at 390nm and 469nm, respectively, from the intrinsic emission and point defects, and the intensity of these peaks decreased with the increase of temperature.


Materials Technology | 2018

Pretreating temperature controls on structural, morphological and optical properties of sol–gel ZnO thin films

Jitao Li; Dingyu Yang; Xinghua Zhu

Abstract ZnO thin films on glass substrates were synthesised by sol–gel method with different pretreating temperature. The thermal behaviours of dried gel were firstly tested and found the relationship between organics evaporation and pretreating temperature. Then the structural, morphological and optical properties of thin films were investigated. X-ray diffraction patterns showed the phase with hexagonal wurtzite structure, and the preferred orientation growth at (0 0 2) plane increased as rising pretreating temperature. Atomic force microscope was used to measure the surface morphology of films and found the wrinkle-like at low pretreating temperature. Transmittance spectra of ZnO thin films prepared at higher pretreating temperature revealed the steeper absorption edge and the larger transmittance values, and the deduced optical energy gap increased. Meanwhile, with increasing pretreating temperature, photoluminescence spectra showed the stronger ultraviolet peak and weaker visible peaks which, respectively, originated from intrinsic emission and various defect emissions.


Journal of Materials Science: Materials in Electronics | 2018

Influence of substrate and Ar/N 2 gas flow ratio on structural, optical and electrical properties of TiN thin films synthetized by DC magnetron sputtering

Peng Gu; Xinghua Zhu; Jitao Li; Haihua Wu; Dingyu Yang

Titanium nitride (TiN) thin films have been prepared by direct-current reaction magnetron sputtering technique on different substrates (glass and Si) and the influence of substrate and Ar/N2 gas flow ratio on structural, optical and electrical properties of TiN thin films were discussed. X-ray diffraction suggested that with the ratio of Ar/N2 decreasing, the diffraction intensity of (111) plane gradually diminished while (200) plane increased and films on Si substrate exhibited better crystalline quality than glass substrate. Improvement of Ar/N2 ratio is contribute to enhance the deposition rate and the obvious surface roughness were observed when the ratio up to 49. Photoluminescence spectra showed that TiN films on Si substrate showed higher intrinsic emission and lower defect emission. Moreover, the resistivity of TiN films showed obviously decreasing as the flow rate ratio of Ar/N2 increased, especially films on Si substrate.


CrystEngComm | 2018

Effect of the nitrogen–oxygen ratio on the position of N atoms in the TiO2 lattice of N-doped TiO2 thin films prepared by DC magnetron sputtering

Haihua Wu; Dingyu Yang; Xinghua Zhu; Peng Gu; Hui Sun; Peihua Wangyang; Jitao Li; Xiaodong He; Linjie Fan

The nitrogen-doped TiO2 thin films are deposited on the glass substrate by using a direct-current (DC) magnetron sputtering technique. The film properties are analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-vis diffuse reflectance spectroscopy (DRS) and photoluminescence (PL) measurements. The results show that, under the same working pressure and other conditions, nitrogen doping promotes the phase transition from anatase to rutile. Also, on changing the nitrogen–oxygen ratio, nitrogen atoms enter the TiO2 lattice in different positions. When oxygen is abundant, nitrogen atoms will be presented in the interstitial positions; when oxygen is insufficient, nitrogen atoms enter the oxygen vacancies first, forming a substituted position. Finally, we find that, with the increase in nitrogen–oxygen ratio, the sample has a better response to visible light, attributed to the change in the energy band-gap.


Functional Materials Letters | 2017

Regulations of aging time on optical properties of nano-crystalline ZnO thin films fabricated by sol–gel method

Jitao Li; Dingyu Yang; Xinghua Zhu; Hui Sun; Xiuying Gao; Peihua Wangyang

Nano-crystalline Zinc oxide (ZnO) thin films on glass substrates have been fabricated by sol–gel method for different aging times. The thermal curve of the dried gel was examined and it was found that evaporation of solvent and the decomposition of the organics have completed before 250∘C. X-ray diffraction patterns and Atomic Force Microscope images of samples only have a small difference of microstructure. The transmittance spectra revealed high transmittance in visible region. The optical band gap of the samples remined stable (3.28eV). Also, the Urbach energy was calculated to explain the defect concentration. The Photoluminescence spectra in ultraviolet and visible regions were studied, and the decreased intensity of peaks at 387nm and the increased emissions in visible range were found. The results showed that excessive aging time can cause degeneration of optical properties of thin films.


AIP Advances | 2017

Influence of electrolyte proportion on the performance of dye-sensitized solar cells

Peng Gu; Dingyu Yang; Xinghua Zhu; Hui Sun; Peihua Wangyang; Jitao Li; Haibo Tian

The performance of dye-sensitized solar cells (DSSC) depends strongly on the electrolyte. In this paper, the electrolytes with various solvents and different potassium iodide (KI) & iodine (I2) concentration were prepared and their influence on the DSSC performance were investigated. The results revealed DSSC with electrolyte prepared by organic solvent show better performance than that of inorganic solvent. Meanwhile, the increasing of KI concentration from 0.1 to 0.6 mol/L can effectively improve the short-circuit current density (Jsc) from 0 2, correspondingly, the DSSC conversion efficiency (η) increased from 0.04% to 0.11%. On the other hand, the Jsc and η of DSSC increased firstly then decreased with the I2 concentration raised from 0.025 mol/L to 0.125 mol/L. It is worth to notice that the open-circuit voltage (Voc) of DSSC is almost unchanged with the concentration of KI and I2. In this paper, the best performance DSSC (Jsc=0.87 mA/cm2, Voc=0.57 mV, η=0.23%) can be obtained with electrolyte at a K...

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Xinghua Zhu

Chengdu University of Information Technology

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Dingyu Yang

Chengdu University of Information Technology

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Hui Sun

Chengdu University of Information Technology

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Peng Gu

Chengdu University of Information Technology

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Peihua Wangyang

Chengdu University of Information Technology

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Haihua Wu

Chengdu University of Information Technology

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Xiuying Gao

Chengdu University of Information Technology

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Haibo Tian

Chengdu University of Information Technology

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Linjie Fan

Chengdu University of Information Technology

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Xiaodong He

Sun Yat-sen University

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