Jiying Peng

Compact KTA-based intracavity optical parametric oscillator driven by a passively Q-switched Nd : GdVO4 laser

We present a compact and efficient KTA-based intracavity optical parametric oscillator (IOPO) driven by a diode-end-pumped Nd:GdVO(4)/Cr:YAG passively Q-switched laser. At the incident diode pump power of 9.2 W, signal (1.53 microm) and idler (3.47 microm) average output powers of up to 744 and 356 mW, respectively, have been obtained. The total (signal+idler) optical-to-optical conversion efficiency is as high as 12%. By using the knife-edge method, near-diffraction-limited signal and idler beams have been detected, and the M(2) factors are well within 1.2. In addition, based on the ABCD matrix theory, the impact of mode matching and the thermal lens effect on the OPO output have been analyzed.

High average power and short pulse duration continuous wave mode-locked Nd : GdVO4 laser with a semiconductor absorber mirror

Passive mode locking of a solid-state Nd:GdVO4 laser is demonstrated. The laser is mode locked by use of a semiconductor absorber mirror (SAM). A low Nd3+ doped Nd:GdVO4 crystal is used to mitigate the thermal lens effect of the laser crystal at a high pump power. The maximum average output power is up to 6.5 W, and the pulse duration is as short as 6.2 ps. The optic-to-optic conversion efficiency is 32.5% and the repetition rate is about 110 MHz.

High-repetition rate Q-switched Nd:YVO4 laser with a composite semiconductor absorber

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber.

Compact eye-safe intracavity optical parametric oscillator with efficient pulse shortening

We report a compact eye-safe intracavity optical parametric oscillator (IOPO), driven by a diode end-pumped passively Q-switched Nd:YVO4/Cr: YAG laser. At the incident diode pump power of 6.2 W and signal pulse repetition rate of 13 kHz, we obtain a minimum signal pulse duration as short as 1.3 ns, holding a pulse compressing factor of 17 with respect to that of the pump, and exhibiting an efficient pulse shortening mechanism. At the same time, the maximum average power of 110 mW and pulse energy of 8.5 μJ for the signal wave are also achieved. In addition, cavity dumping characteristics and the correlation dynamics between the laser and the OPO are qualitatively analyzed.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd:YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-μm-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.