Jo Kawabata

Suppression of antiferromagnetic order and hybridization gap by electron and hole doping in the Kondo semiconductorCeOs2Al10

The Kondo semiconductor CeOs

Magnetic ordering with reduced cerium moments in hole-doped CeOs2Al10

_{2}

Contrasting carrier doping effects in the Kondo insulator CeOs 2 Al 10 : The influential role of c − f hybridization in spin-gap formation

Al

Effect of Si Substitution on the Antiferromagnetic Ordering in the Kondo Semiconductor CeRu2Al10

_{10}

Contrasting effect of La substitution on the magnetic moment direction in the Kondo semiconductorsCeT2Al10(T=Ru,Os)

exhibits an antiferromagnetic (AFM) order at

Doping Effects on the Electronic Structure of an Anisotropic Kondo Semiconductor CeOs2Al10: An Optical Study with Re and Ir Substitution

T_\mathrm{N}= 28.5

Anisotropic Thermopower of the Antiferromagnetic Kondo Semiconductor CeOs2Al10 Doped with 5d Electrons and Holes

K, whose temperature is unexpectedly high for the small ordered moment of

Uniaxial pressure effects on the unusual antiferromagnetic transition in the Kondo semiconductor CeOs2Al10

0.3

Change of magnetic ground state by light electron doping in CeOs2Al10

\mu_\mathrm{B}/