Jo Onoda

Electronegativity determination of individual surface atoms by atomic force microscopy

Electronegativity is a fundamental concept in chemistry. Despite its importance, the experimental determination has been limited only to ensemble-averaged techniques. Here, we report a methodology to evaluate the electronegativity of individual surface atoms by atomic force microscopy. By measuring bond energies on the surface atoms using different tips, we find characteristic linear relations between the bond energies of different chemical species. We show that the linear relation can be rationalized by Paulings equation for polar covalent bonds. This opens the possibility to characterize the electronegativity of individual surface atoms. Moreover, we demonstrate that the method is sensitive to variation of the electronegativity of given atomic species on a surface due to different chemical environments. Our findings open up ways of analysing surface chemical reactivity at the atomic scale.

(2n × 1) Reconstructions of TiO2(011) Revealed by Noncontact Atomic Force Microscopy and Scanning Tunneling Microscopy.

We have used noncontact atomic force microscopy (NC-AFM) and scanning tunneling microscopy (STM) to study the rutile TiO2(011) surface. A series of (2n × 1) reconstructions were observed, including two types of (4 × 1) reconstruction. High-resolution NC-AFM and STM images indicate that the (4 × 1)-α phase has the same structural elements as the more widely reported (2 × 1) reconstruction. An array of analogous higher-order (2n × 1) reconstructions were also observed where n = 3–5. On the other hand, the (4 × 1)-β reconstruction seems to be a unique structure without higher-order analogues. A model is proposed for this structure that is also based on the (2 × 1) reconstruction but with additional microfacets of {111} character.

Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC

The effects of Pb intercalation on the structural and electronic properties of epitaxial single-layer graphene grown on SiC(0001) substrate are investigated using scanning tunneling microscopy (STM), noncontact atomic force microscopy, Kelvin probe force microscopy (KPFM), X-ray photoelectron spectroscopy, and angle-resolved photoemission spectroscopy (ARPES) methods. The STM results show the formation of an ordered moiré superstructure pattern induced by Pb atom intercalation underneath the graphene layer. ARPES measurements reveal the presence of two additional linearly dispersing π-bands, providing evidence for the decoupling of the buffer layer from the underlying SiC substrate. Upon Pb intercalation, the Si 2p core level spectra show a signature for the existence of PbSi chemical bonds at the interface region, as manifested in a shift of 1.2 eV of the bulk SiC component toward lower binding energies. The Pb intercalation gives rise to hole-doping of graphene and results in a shift of the Dirac point energy by about 0.1 eV above the Fermi level, as revealed by the ARPES measurements. The KPFM experiments have shown that decoupling of the graphene layer by Pb intercalation is accompanied by a work function increase. The observed increase in the work function is attributed to the suppression of the electron transfer from the SiC substrate to the graphene layer. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. These results demonstrate that the construction of a graphene-capped Pb/SiC system offers a possibility of tuning the graphene electronic properties and exploring intriguing physical properties such as superconductivity and spintronics.

Initial and secondary oxidation products on the Si(111)-(7 × 7) surface identified by atomic force microscopy and first principles calculations

We investigate the initial and secondary oxidation products on the Si(111)-(7 × 7) surface at room-temperature using atomic force microscopy (AFM) and density functional theory calculations. At the initial oxidation stages, we find that there are two types of bright spots in AFM images. One of them is identified as a Si adatom with one O atom inserted into one of the backbonds, while the other is ascribed to a Si adatom with two inserted O atoms. We observe that the latter one turns into the secondary oxidation product by a further coming O2 molecule, which appears as a more protruded bright spot. The atomic configuration of this product is identified as Si adatom whose top and all three backbonds make bonds with O atoms. The appearances of initial and secondary oxidation products are imaged as bright and dark sites by scanning tunneling microscopy, respectively. It is revealed that AFM gives us the topographic information close to the real atomic corrugation of adsorbed structures on the semiconductor su...

Graphene: Effects of Pb Intercalation on the Structural and Electronic Properties of Epitaxial Graphene on SiC (Small 29/2016).

On page 3956, A. Yurtsever and co-workers demonstrate a novel method to obtain a p-doped graphene layer on SiC (0001) substrate by Pb atom intercalation. The Pb intercalated structure is found to be stable in ambient conditions and at high temperatures up to 1250 °C. It is shown that electronic properties of graphene can be greatly tuned by Pb intercalation on SiC, which can facilitate the use of graphene in the various fields such as superconductivity and spintronics.