Joe Jesudurai

Synthesis, growth and characterization of new borate-mixed crystals of type (NH4)1-xKxB5O8.

New borate-mixed crystals of type (NH4)1-x KxB5O8 were grown from aqueous solution by slow solvent evaporation method. The mixed crystals were confirmed by atomic absorption studies (AAS) and characterized by X-ray diffractometry (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), optical absorption and solubility studies. The second harmonic generation efficiencies of the parent and mixed crystals were studied and compared with that of KDP.

Semiconducting metal oxides for gas sensor applications

The present paper reports the synthesis of the semiconducting metal oxides of tin, copper and zinc via a facile hydrothermal route. By the X-ray diffraction technique the as-synthesized materials are investigated and its crystal properties are characterized.The AC conductivity of the metal oxides are determined in the ambient and cigarette smoke environment. The results show, besides the conventional method of testing the sensitivity of the metal oxides, the dielectric analysis is a versatile method for determining potentially suitable candidates for sensing applications.

A study on the role of surfactant on the layered growth of SnSe2 for electrical applications

Nano powder of SnSe2 was synthesized using two different surfactants, such as poly-ethelene glycol (PEG) and sodium dodecyl sulphate (SDS) through a simple hydrothermal method. The as-prepared nano powders were confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), energy dispersive X-ray (EDS). The XRD analysis reveals that the synthesized material belongs to hexagonal structure. FTIR confirms the presence of various vibrational frequencies. The elemental weight percentage of the material was calculated from EDS analysis. The title compound was characterized by scanning electron microscopy and dielectric analysis. The surface morphology of SnSe2 particles with PEG shows the clustered layers of flake-liked structures and SDS shows the flower like structures. Low dielectric constant confirms the suitability of the material for microelectronic device fabrication.