Joel T. Weiss

Time-resolved x-ray diffraction techniques for bulk polycrystalline materials under dynamic loading

We have developed two techniques for time-resolved x-ray diffraction from bulk polycrystalline materials during dynamic loading. In the first technique, we synchronize a fast detector with loading of samples at strain rates of ~10(3)-10(4) s(-1) in a compression Kolsky bar (split Hopkinson pressure bar) apparatus to obtain in situ diffraction patterns with exposures as short as 70 ns. This approach employs moderate x-ray energies (10-20 keV) and is well suited to weakly absorbing materials such as magnesium alloys. The second technique is useful for more strongly absorbing materials, and uses high-energy x-rays (86 keV) and a fast shutter synchronized with the Kolsky bar to produce short (~40 μs) pulses timed with the arrival of the strain pulse at the specimen, recording the diffraction pattern on a large-format amorphous silicon detector. For both techniques we present sample data demonstrating the ability of these techniques to characterize elastic strains and polycrystalline texture as a function of time during high-rate deformation.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation

A high-speed pixel array detector for time-resolved X-ray imaging at synchrotrons has been developed. The ability to isolate single synchrotron bunches makes it ideal for time-resolved dynamical studies.

Calibration and post-processing for photon-integrating pixel array detectors

We have developed calibration and data processing techniques optimized specifically for photon-integrating pixel array detectors (PADs). Primary effects to be calibrated are pixel gain variation and pixel area variation. Gain variations originate in pixel electronics and may be corrected for via a multiplicative factor. In contrast, area variations result from doping inhomogeneities in the sensor diode, which induce lateral fields that disturb the path of charge carriers as they traverse the diode, resulting in variation in the area mapped to each pixel, depending on the x-ray energy. Methods for measuring both effects are described. Additionally, the single-photon sensitivity used in the gain calibration enables flexible thresholding of events in low-fluence data.

Characterization of CdTe Sensors with Schottky Contacts Coupled to Charge-Integrating Pixel Array Detectors for X-Ray Science

Pixel Array Detectors (PADs) consist of an x-ray sensor layer bonded pixel-by-pixel to an underlying readout chip. This approach allows both the sensor and the custom pixel electronics to be tailored independently to best match the x-ray imaging requirements. Here we present characterizations of CdTe sensors hybridized with two different charge-integrating readout chips, the Keck PAD and the Mixed-Mode PAD (MM-PAD), both developed previously in our laboratory. The charge-integrating architecture of each of these PADs extends the instantaneous counting rate by many orders of magnitude beyond that obtainable with photon counting architectures. The Keck PAD chip consists of rapid, 8-frame, in-pixel storage elements with framing periods < 150 ns. The second detector, the MM-PAD, has an extended dynamic range by utilizing an in-pixel overflow counter coupled with charge removal circuitry activated at each overflow. This allows the recording of signals from the single-photon level to tens of millions of x-rays/pixel/frame while framing at 1 kHz. Both detector chips consist of a 128 × 128 pixel array with (150 μm)2 pixels.

In Situ Time-Resolved Measurements of Extension Twinning During Dynamic Compression of Polycrystalline Magnesium

We report in situ time-resolved measurements of the dynamic evolution of the volume fraction of extension twins in polycrystalline pure magnesium and in the AZ31B magnesium alloy, using synchrotron x-ray diffraction during compressive loading at high strain rates. The dynamic evolution of the twinning volume fraction leads to a dynamic evolution of the texture. Although both the pure metal and the alloy had similar initial textures, we observe that the evolution of texture is slower in the alloy. We also measured the evolution of the lattice strains in each material during deformation which, together with the twin volume fractions, allows us to place some constraints on the relative contributions of dislocation-based slip and deformation twinning to the overall plastic deformation during the dynamic deformations.

Sub-microsecond x-ray imaging using hole-collecting Schottky type CdTe with charge-integrating pixel array detectors

CdTe is increasingly being used as the x-ray sensing material in imaging pixel array detectors for x-rays, generally above 20 keV, where silicon sensors become unacceptably transparent. Unfortunately CdTe suffers from polarization, which can alter the response of the material over time and with accumulated dose. Most prior studies used long integration times or CdTe that was not of the hole-collecting Schottky type. We investigated the temporal response of hole-collecting Schottky type CdTe sensors on timescales ranging from tens of nanoseconds to several seconds. We found that the material shows signal persistence on the timescale of hundreds of milliseconds attributed to the detrapping of a shallow trap, and additional persistence on sub-microsecond timescales after polarization. The results show that this type of CdTe can be used for time resolved studies down to approximately 100 ns. However quantitative interpretation of the signal requires careful attention to bias voltages, polarization and exposure history.

Potential beneficial effects of electron-hole plasmas created in silicon sensors by XFEL-like high intensity pulses for detector development

There is a compelling need for a high frame rate imaging detector with a wide dynamic range, from single x-rays/pixel/pulse to >106 x-rays/pixel/pulse, that is capable of operating at both x-ray free electron laser (XFEL) and 3rd generation sources with sustained fluxes of > 1011 x-rays/pixel/s [1, 2, 3]. We propose to meet these requirements with the High Dynamic Range Pixel Array Detector (HDR-PAD) by (a) increasing the speed of charge removal strategies [4], (b) increasing integrator range by implementing adaptive gain [5], and (c) exploiting the extended charge collection times of electron-hole pair plasma clouds that form when a sufficiently large number of x-rays are absorbed in a detector sensor in a short period of time [6]. We have developed a measurement platform similar to the one used in [6] to study the effects of high electron-hole densities in silicon sensors using optical lasers to emulate the conditions found at XFELs. Characterizations of the employed tunable wavelength laser with picose...

High-speed x-ray imaging with the Keck pixel array detector (Keck PAD) for time-resolved experiments at synchrotron sources

Modern storage rings are readily capable of providing intense x-ray pulses, tens of picoseconds in duration, millions of times per second. Exploiting the temporal structure of these x-ray sources opens avenues for studying rapid structural changes in materials. Many processes (e.g. crack propagation, deformation on impact, turbulence, etc.) differ in detail from one sample trial to the next and would benefit from the ability to record successive x-ray images with single x-ray sensitivity while framing at 5 to 10 MHz rates. To this end, we have pursued the development of fast x-ray imaging detectors capable of collecting bursts of images that enable the isolation of single synchrotron bunches and/or bunch trains. The detector technology used is the hybrid pixel array detector (PAD) with a charge integrating front-end, and high-speed, in-pixel signal storage elements. A 384×256 pixel version, the Keck-PAD, with 150 µm × 150 µm pixels and 8 dedicated in-pixel storage elements is operational, has been tested ...

The high dynamic range pixel array detector (HDR-PAD): Concept and design

Experiments at storage ring light sources as well as at next-generation light sources increasingly require detectors capable of high dynamic range operation, combining low-noise detection of single photons with large pixel well depth. XFEL sources in particular provide pulse intensities sufficiently high that a purely photon-counting approach is impractical. The High Dynamic Range Pixel Array Detector (HDR-PAD) project aims to provide a dynamic range extending from single-photon sensitivity to 106 photons/pixel in a single XFEL pulse while maintaining the ability to tolerate a sustained flux of 1011 ph/s/pixel at a storage ring source. Achieving these goals involves the development of fast pixel front-end electronics as well as, in the XFEL case, leveraging the delayed charge collection due to plasma effects in the sensor. A first prototype of essential electronic components of the HDR-PAD readout ASIC, exploring different options for the pixel front-end, has been fabricated. Here, the HDR-PAD concept and...

Characterization of Chromium Compensated GaAs as an x-ray Sensor Material for Charge-Integrating Pixel Array Detectors

We studied the properties of chromium compensated GaAs when coupled to charge integrating ASICs as a function of detector temperature, applied bias and x-ray tube energy. The material is a photoresistor and can be biased to collect either electrons or holes by the pixel circuitry. Both are studied here. Previous studies have shown substantial hole trapping. This trapping and other sensor properties give rise to several non-ideal effects which include an extended point spread function, variations in the effective pixel size, and rate dependent offset shifts. The magnitude of these effects varies with temperature and bias, mandating good temperature uniformity in the sensor and very good temperature stabilization, as well as a carefully selected bias voltage.