Joel W. Ager

Unusual properties of the fundamental band gap of InN

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.

Three-dimensional nanopillar-array photovoltaics on low-cost and flexible substrates

Solar energy represents one of the most abundant and yet least harvested sources of renewable energy. In recent years, tremendous progress has been made in developing photovoltaics that can be potentially mass deployed. Of particular interest to cost-effective solar cells is to use novel device structures and materials processing for enabling acceptable efficiencies. In this regard, here, we report the direct growth of highly regular, single-crystalline nanopillar arrays of optically active semiconductors on aluminium substrates that are then configured as solar-cell modules. As an example, we demonstrate a photovoltaic structure that incorporates three-dimensional, single-crystalline n-CdS nanopillars, embedded in polycrystalline thin films of p-CdTe, to enable high absorption of light and efficient collection of the carriers. Through experiments and modelling, we demonstrate the potency of this approach for enabling highly versatile solar modules on both rigid and flexible substrates with enhanced carrier collection efficiency arising from the geometric configuration of the nanopillars.

Above-bandgap voltages from ferroelectric photovoltaic devices

In conventional solid-state photovoltaics, electron-hole pairs are created by light absorption in a semiconductor and separated by the electric field spaning a micrometre-thick depletion region. The maximum voltage these devices can produce is equal to the semiconductor electronic bandgap. Here, we report the discovery of a fundamentally different mechanism for photovoltaic charge separation, which operates over a distance of 1-2 nm and produces voltages that are significantly higher than the bandgap. The separation happens at previously unobserved nanoscale steps of the electrostatic potential that naturally occur at ferroelectric domain walls in the complex oxide BiFeO(3). Electric-field control over domain structure allows the photovoltaic effect to be reversed in polarity or turned off. This new degree of control, and the high voltages produced, may find application in optoelectronic devices.

Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

High-efficiency multijunction or tandem solar cells based on group III–V semiconductor alloys are applied in a rapidly expanding range of space and terrestrial programs. Resistance to high-energy radiation damage is an essential feature of such cells as they power most satellites, including those used for communications, defense, and scientific research. Recently we have shown that the energy gap of In1−xGaxN alloys potentially can be continuously varied from 0.7 to 3.4 eV, providing a full-solar-spectrum material system for multijunction solar cells. We find that the optical and electronic properties of these alloys exhibit a much higher resistance to high-energy (2 MeV) proton irradiation than the standard currently used photovoltaic materials such as GaAs and GaInP, and therefore offer great potential for radiation-hard high-efficiency solar cells for space applications. The observed insensitivity of the semiconductor characteristics to the radiation damage is explained by the location of the band edge...

Small band gap bowing in In1−xGaxN alloys

High-quality wurtzite-structured In-rich In1−xGaxN films (0⩽x⩽0.5) have been grown on sapphire substrates by molecular beam epitaxy. Their optical properties were characterized by optical absorption and photoluminescence spectroscopy. The investigation reveals that the narrow fundamental band gap for InN is near 0.8 eV and that the band gap increases with increasing Ga content. Combined with previously reported results on the Ga-rich side, the band gap versus composition plot for In1−xGaxN alloys is well fit with a bowing parameter of ∼1.4 eV. The direct band gap of the In1−xGaxN system covers a very broad spectral region ranging from near-infrared to near-ultraviolet.

Photovoltaic effects in BiFeO3

We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8–0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface.

Near-unity photoluminescence quantum yield in MoS2

Brighter molybdenum layers The confined layers of molybdenum disulphide (MoS2) exhibit photoluminescence that is attractive for optolectronic applications. In practice, efficiencies are low, presumably because defects trap excitons before they can recombine and radiate light. Amani et al. show that treatment of monolayer MoS2 with a nonoxidizing organic superacid, bis(trifluoromethane) sulfonimide, increased luminescence efficiency in excess of 95%. The enhancement mechanism may be related to the shielding of defects, such as sulfur vacancies. Science, this issue p. 1065 Superacid treatment enhances the luminescence efficiency of monolayer molybdenum disulfide from 1% to >95%. Two-dimensional (2D) transition metal dichalcogenides have emerged as a promising material system for optoelectronic applications, but their primary figure of merit, the room-temperature photoluminescence quantum yield (QY), is extremely low. The prototypical 2D material molybdenum disulfide (MoS2) is reported to have a maximum QY of 0.6%, which indicates a considerable defect density. Here we report on an air-stable, solution-based chemical treatment by an organic superacid, which uniformly enhances the photoluminescence and minority carrier lifetime of MoS2 monolayers by more than two orders of magnitude. The treatment eliminates defect-mediated nonradiative recombination, thus resulting in a final QY of more than 95%, with a longest-observed lifetime of 10.8 ± 0.6 nanoseconds. Our ability to obtain optoelectronic monolayers with near-perfect properties opens the door for the development of highly efficient light-emitting diodes, lasers, and solar cells based on 2D materials.

Temperature dependence of the fundamental band gap of InN

The fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature. The band edge absorption energy and its temperature dependence depend on the doping level. The band gap variation and Varshni parameters of InN are compared with other group III nitrides. The energy of the photoluminescence peak is affected by the emission from localized states and cannot be used to determine the band gap energy. Based on the results obtained on two samples with distinctly different electron concentrations, the effect of degenerate doping on the optical properties of InN is discussed.

The true toughness of human cortical bone measured with realistically short cracks

Bone is more difficult to break than to split. Although this is well known, and many studies exist on the behaviour of long cracks in bone, there is a need for data on the orientation-dependent crack-growth resistance behaviour of human cortical bone that accurately assesses its toughness at appropriate size scales. Here, we use in situ mechanical testing to examine how physiologically pertinent short (<600 microm) cracks propagate in both the transverse and longitudinal orientations in cortical bone, using both crack-deflection/twist mechanics and nonlinear-elastic fracture mechanics to determine crack-resistance curves. We find that after only 500 microm of cracking, the driving force for crack propagation was more than five times higher in the transverse (breaking) direction than in the longitudinal (splitting) direction owing to major crack deflections/twists, principally at cement sheaths. Indeed, our results show that the true transverse toughness of cortical bone is far higher than previously reported. However, the toughness in the longitudinal orientation, where cracks tend to follow the cement lines, is quite low at these small crack sizes; it is only when cracks become several millimetres in length that bridging mechanisms can fully develop leading to the (larger-crack) toughnesses generally quoted for bone.

Hardness, elastic modulus, and structure of very hard carbon films produced by cathodic‐arc deposition with substrate pulse biasing

The hardness, elastic modulus, and structure of several amorphous carbon films on silicon prepared by cathodic‐arc deposition with substrate pulse biasing have been examined using nanoindentation, energy loss spectroscopy (EELS), and cross‐sectional transmission electron microscopy. EELS analysis shows that the highest sp3 contents (85%) and densities (3.00 g/cm3) are achieved at incident ion energies of around 120 eV. The hardness and elastic modulus of the films with the highest sp3 contents are at least 59 and 400 GPa, respectively. These values are conservative lower estimates due to substrate influences on the nanoindentation measurements. The films are predominantly amorphous with a ∼20 nm surface layer which is structurally different and softer than the bulk.