Johannes Fallert

Ordered, uniform-sized ZnO nanolaser arrays

Ordered ZnO nanorod arrays with almost uniform rod size have been grown perpendicularly on GaN∕Al2O3 substrates by a controlled vapor phase transport growth method. The ZnO nanorods are [0001] oriented single crystals with diameter of 200nm and length of 4.7μm, with a rod-to-rod spacing of 500nm. Photoluminescence spectra of the rod arrays indicate that the rods are of high crystal quality: very strong, well-separated bound and free exciton emission in the ultraviolet (UV) region are resolved at low temperature. Time resolved microphotoluminescence measurements are performed on single nanorods standing on the substrate which demonstrates lasing behavior with multiple UV lasing modes. Under quasistationary excitation lasing is observed up to room temperature. The lasing emission peaks are sharp, with a linewidth about 0.1nm, and have a fast decay time of ∼8ps. These high crystal quality nanorod arrays may be promising candidates for UV nanolaser devices.

Surface-state related luminescence in ZnO nanocrystals

We investigate the optical properties of four different samples of ZnO nanocrystals, with a particle size average varying from 70 up to 380nm. The photoluminescence (PL) of all samples shows at low temperature an emission band around 3.31eV, which is several orders of magnitude stronger compared to the PL of bulk ZnO at this energy. This band shows a clear dependence on the surface to volume ratio of the nanocrystals and is therefore assigned to surface states. Temperature dependent measurements reveal that this band plays a major role up to room temperature for all examined ZnO powders. Additionally, intensity dependent measurements display that the origin of this emission band can be assigned to bound exciton complexes (BECs). Compared to the well known shallow BECs the measured lifetimes of these relatively strong bound excitons states are much longer.

Ordered n-type ZnO nanorod arrays

Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN∕Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single n-ZnO nanorods yield resistances of about 50–200kΩ and a typical specific resistivity of 2.0×10−2Ωcm. The resistivity is one order of magnitude reduced by introducing In compared to the nominally undoped ZnO nanorods.

Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots

We report on efficient injection of electron spins into InGaAs-based nanostructures. The spin light-emitting diodes incorporate an InGaAs quantum well or quantum dots, respectively, as well as a semimagnetic ZnMnSe spin-aligner layer. We show a circular polarization degree of up to 35% for the electroluminescence from InGaAs quantum wells and up to 21% for InGaAs quantum dots. We can clearly attribute the polarization of the emitted photons to the spin alignment in the semimagnetic layer by comparison to results from reference devices (where the ZnMnSe is replaced by ZnSe) and from all-optical measurements.

Structural, magnetic, and optical properties of Co- and Gd-implanted ZnO(0001) substrates

ZnO(0001) substrates were ion implanted with 100 keV of Co and 300 keV of Gd at different fluences ranging from 5×1013–1×1015/cm2. The resulting Co:ZnO and Gd:ZnO samples were analyzed with respect to their structural, magnetic, and optical properties. The effect of annealing at 350 °C on the structure and the resulting magnetic and optical properties were investigated as well. For Co:ZnO hardly any changes were observable, neither in the structural nor in the magnetic properties, even though the existence of substitutional Co2+ in the ZnO lattice could be shown by means of low temperature photoluminescence especially for Zn-annealed samples. For the much larger Gd ion the implantation leads to a changed crystal structure, which leads to a ferromagneticlike behavior for higher implantation doses, which could even be enhanced by annealing in vacuum. Ferromagnetic behavior in annealed Gd:ZnO is corroborated by ferromagnetic resonance measurements at low temperatures. The distinct behavior of Gd- and Co-impl...

Absolute external luminescence quantum efficiency of zinc oxide

We report on the measurement of the absolute external luminescence quantum efficiency of various ZnO samples using a miniature integrating sphere fitted into a cryostat. Even the absolute luminescence quantum efficiencies per spectral interval are directly accessible. Measurements have been carried out on high quality bulk samples and different commercially available ZnO powders from 8K up to room temperature. Activated processes lead to an overall decrease in the efficiency with temperature. All efficiencies are considerably below unity, making the identification of the luminescence decay time with the radiative life time very questionable.

Synthesis and optical properties of ZnO and carbon nanotube based coaxial heterostructures

Carbon nanotubes and ZnO based functional coaxial heterostructured nanotubes have been fabricated by using atomic layer deposition. An irregular structured shell composed of ZnO nanocrystals was deposited on pristine nanotubes, while a highly defined ZnO shell was deposited on the tubes after its functionalization with Al2O3. Photoluminescence measurements of the ZnO shell on Al2O3/nanotube show a broad green band emission, whereas the shell grown on the bare nanotube shows a band shifted to the orange spectral range.

Influence of the measurement procedure on the field-effect dependent conductivity of ZnO nanorods

The electrical properties of field-effect transistors fabricated on the basis of single ZnO nanorods were analyzed under ambient conditions and in the chamber of a scanning electron microscope under high-vacuum conditions. Under ambient conditions, the threshold voltage and conductivity may depend strongly on the details of the measurement procedure as the chosen gate voltage range and gate voltage sweep direction. Electron irradiation in a scanning electron microscope under high-vacuum conditions at ∼10−5 mbar leads to desorption of oxygen and other electronegative molecules, which can increase the conductivity by more than two orders of magnitude.

A comparative study of guided modes and random lasing in ZnO nanorod structures

Hexagonal and arrow-headed ZnO nanorod structures have been grown by low pressure chemical vapour deposition (CVD) and atmospheric pressure metal-organic CVD. The technology ensures a high optical quality of the produced nanostructures to act as gain medium for stimulated emission in the ultraviolet spectral region in combination with high quality factor laser resonators. Multiple sharp lasing peaks related to the guided modes were realized from single hexagonal nanorods and arrays of hexagonal ZnO nanorods. A comparative analysis of the variations of lasing spectra from shot to shot of pumping, and the dependence of lasing threshold on the area of pump beam spot on the sample surface in disordered agglomerations of hexagonal nanorods and in layers consisting of arrow-headed nanorods, demonstrate that lasing is determined by the superposition of guided modes in the first case, while random lasing occurs in the second case.

Spin and carrier relaxation dynamics in InAs/GaAs quantum-dot spin-LEDs

We investigate the dynamics of electrons injected into InAs/GaAs quantum dots by initializing and further observing the spin state of the electrons. For this purpose, we use spin polarized light-emitting diodes where the electron spin is set in a semimagnetic ZnMnSe layer. We find that the degree of optical polarization depends strongly on the ground state energy of the quantum dot. A dependence of polarization on dopant concentration in the spin aligner suggests an influence of residual electrons in the quantum dots.