John Colton

AN ANALYSIS OF TEMPERATURE DEPENDENT PHOTOLUMINESCENCE LINE SHAPES IN INGAN

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.

Long coherence times at 300 K for nitrogen-vacancy center spins in diamond grown by chemical vapor deposition

Electron-spin-echo experiments reveal phase-memory times as long as 58 μs at 300 K for nitrogen-vacancy centers in chemical vapor deposition (CVD) single crystals. The spins were optically polarized and optically detected. Two high-quality CVD samples were studied. From the current results, it is not clear whether these phase-memory times represent a fundamental limit or are limited by an external source of decoherence.

Selective excitation and thermal quenching of the yellow luminescence of GaN

We report the observation of narrower structures in the yellow luminescence of bulk and thin-film n-type GaN, using the technique of selective excitation. These fine structures exhibit thermal quenching associated with an activated behavior. We attribute these fine structures to phonons and electronic excitations of a shallow donor-deep acceptor complex, and determine its activation energy for delocalization. Our results suggest that in addition to distant donor-acceptor pairs, the yellow luminescence can also involve emission complexes of shallow donors and deep acceptors.

Single-Qubit Operations with the Nitrogen-Vacancy Center in Diamond

A concept combining optics and microwave pulses with the negative charge-state of the nitrogen-vacancy (NV-) center in diamond is demonstrated through experiments that are equivalent to single-qubit gates, and decoherencefor this qubit is examined. The spin levels of the ground state provide the two-level system. Optical excitation provides polarization of these states. The polarized state is operated coherently by 35 GHz microwave pulses. The final state is read out through the photoluminescence intensity. Decoherence arises from different sources for different samples. For high-pressure, high-temperature synthetic diamonds, the high concentration of substitutional N limits the phase-memory to a few μs. In a single-crystal CVD diamond, the phase memory time is at least 32 μs at 100 K. 1 4 N is tightly coupled to the electronic spin and produces modulation of the electron-spin echo decay under certain conditions. A two-qubit gate is proposed using this nuclear spin. This demonstration provides a great deal of insight into quantum devices in the solid state with some possibility for real application.

What determines the emission peak energy of the blue luminescence in highly Mg-doped p-GaN?

We report a study of the 2.8 eV blue luminescence (BL) in heavily Mg-doped p-GaN via resonant excitation with a tunable blue dye laser. The dependence of the BL on the excitation photon energy (Eex) is unlike that of the yellow luminescence found in n-type GaN. An Urbach-type band tail, with Urbach parameter of 33 meV is observed in the vicinity of the BL energy. We propose that the peak energy of the BL marks the transition from localized states to delocalized states within this band tail.

Sensitive detection of surface- and size-dependent direct and indirect band gap transitions in ferritin

Ferritin is a protein nano-cage that encapsulates minerals inside an 8 nm cavity. Previous band gap measurements on the native mineral, ferrihydrite, have reported gaps as low as 1.0 eV and as high as 2.5-3.5 eV. To resolve this discrepancy we have used optical absorption spectroscopy, a well-established technique for measuring both direct and indirect band gaps. Our studies included controls on the protein nano-cage, ferritin with the native ferrihydrite mineral, and ferritin with reconstituted ferrihydrite cores of different sizes. We report measurements of an indirect band gap for native ferritin of 2.140 ± 0.015 eV (579.7 nm), with a direct transition appearing at 3.053 ± 0.005 eV (406.1 nm). We also see evidence of a defect-related state having a binding energy of 0.220 ± 0.010 eV . Reconstituted ferrihydrite minerals of different sizes were also studied and showed band gap energies which increased with decreasing size due to quantum confinement effects. Molecules that interact with the surface of the mineral core also demonstrated a small influence following trends in ligand field theory, altering the native minerals band gap up to 0.035 eV.

Spin Lifetime Measurements in MBE-Grown GaAs Epilayers

Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic field (Hanle effect). The lifetimes thus obtained were 14 and 26 ns for samples nominally doped at 1 x 10 1 5 and 3 × 10 1 5 cm - 3 , respectively. The dominant dephasing mechanism, which is the hyperfine interaction of localized electrons with lattice nuclei, is discussed. Our results are presented in the context of our larger goal, which is to use resonance techniques for spin measurements and control. In this context, the Hanle spin lifetime measurement is a necessary step to be followed by optically detected magnetic resonance in a longitudinal magnetic field.

Selective excitation of the yellow luminescence of GaN

The yellow luminescence of n-type GaN has been studied with selective excitation using a combination of Ar ion and dye lasers. Narrower structures whose peak energies follow the excitation photon energy over the width of the yellow luminescence have been observed. Unlike the yellow luminescence excited by above band gap excitations, these fine structures exhibits thermal activated quenching behavior. We propose that these fine structures are due to emission occurring at complexes of shallow donors and deep acceptors which can be resonantly excited by photons with energies below the band gap. The activation energy deduced from their intensity is that for delocalization of electrons out of the complexes. Our results therefore suggest that there is more than one recombination channel (usually assumed to be due to distant donor-acceptor pairs) to the yellow luminescence in GaN.

Permanganate-based synthesis of manganese oxide nanoparticles in ferritin

This paper investigates the comproportionation reaction of MnII with [Formula: see text] as a route for manganese oxide nanoparticle synthesis in the protein ferritin. We report that [Formula: see text] serves as the electron acceptor and reacts with MnII in the presence of apoferritin to form manganese oxide cores inside the protein shell. Manganese loading into ferritin was studied under acidic, neutral, and basic conditions and the ratios of MnII and permanganate were varied at each pH. The manganese-containing ferritin samples were characterized by transmission electron microscopy, UV/Vis absorption, and by measuring the band gap energies for each sample. Manganese cores were deposited inside ferritin under both the acidic and basic conditions. All resulting manganese ferritin samples were found to be indirect band gap materials with band gap energies ranging from 1.01 to 1.34 eV. An increased UV/Vis absorption around 370 nm was observed for samples formed under acidic conditions, suggestive of MnO2 formation inside ferritin.

Non-native Co-, Mn-, and Ti-oxyhydroxide nanocrystals in ferritin for high efficiency solar energy conversion

Quantum dot solar cells seek to surpass the solar energy conversion efficiencies achieved by bulk semiconductors. This new field requires a broad selection of materials to achieve its full potential. The 12 nm spherical protein ferritin can be used as a template for uniform and controlled nanocrystal growth, and to then house the nanocrystals for use in solar energy conversion. In this study, precise band gaps of titanium, cobalt, and manganese oxyhydroxide nanocrystals within ferritin were measured, and a change in band gap due to quantum confinement effects was observed. The range of band gaps obtainable from these three types of nanocrystals is 2.19-2.29 eV, 1.93-2.15 eV, and 1.60-1.65 eV respectively. From these measured band gaps, theoretical efficiency limits for a multi-junction solar cell using these ferritin-enclosed nanocrystals are calculated and found to be 38.0% for unconcentrated sunlight and 44.9% for maximally concentrated sunlight. If a ferritin-based nanocrystal with a band gap similar to silicon can be found (i.e. 1.12 eV), the theoretical efficiency limits are raised to 51.3% and 63.1%, respectively. For a current matched cell, these latter efficiencies become 41.6% (with an operating voltage of 5.49 V), and 50.0% (with an operating voltage of 6.59 V), for unconcentrated and maximally concentrated sunlight respectively.