John Jianshi Wang

Method for forming flash memory devices

Elimination of poly cap for easy poly1 contact for NAND product

Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices

In-line voltage contrast determination of tunnel oxide weakness in integrated circuit technology development

Interlevel dielectric thickness monitor for complex semiconductor chips

High yield performance semiconductor process flow for NAND flash memory products

Flash memory devices with oxynitride dielectric as the charge storage media

Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices

Efficient method to detect process induced defects in the gate stack of flash memory devices

Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices