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Dive into the research topics where John L. Persson is active.

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Featured researches published by John L. Persson.


Combustion and Flame | 1999

The influence of a catalytic surface on the gas-phase combustion of H2 + O2

Michael Försth; Fredrik Gudmundson; John L. Persson; Arne Rosén

Abstract The OH concentration outside a Pt catalyst at 1300 K, in a stagnation flow of 90% O 2 and 10% H 2 , has been studied by planar laser-induced fluorescence (PLIF), and compared to measurements outside a heated glass surface. The total pressure in the system was varied from 0.2 to 120 torr. At low pressure, surface reactions were observed for the Pt surface, but not for the glass. At higher pressure, gas-phase ignition occurred for both systems, but not at the same pressure: ignition occurred at a lower pressure outside the inert glass surface. Computer modeling using CHEMKIN confirmed these results. The difference in gas-phase ignition is also seen in the modeling results, and it is due to the removal of atomic O and H from the gas by adsorption and reaction on the catalytic surface. The catalytic reaction mechanism on the surface plays an important role as it enhances the removal of radicals, compared to a surface where only radical recombination back to reactants is allowed.


Applied Optics | 2000

Compensation method for attenuated planar laser images of optically dense sprays

Rafeef Abugharbieh; John L. Persson; Michael Försth; Arne Rosén; Anders Karlström; Tomas Gustavsson

We present a method for compensating laser attenuation in optically dense sprays, in particular for use in combustion engine research. Images of the fuel sprays are produced by planar laser imaging, where Mie scattered light from a cross section of the spray is imaged onto a CCD camera. The compensation scheme is based on the Beer-Lambert law, which is used here to sum up the loss of light along the path of the laser in the image, and to compensate iteratively, pixel by pixel, for this loss.


European Physical Journal D | 1993

Reactivity of small transition metal clusters

John L. Persson; Martin Andersson; Arne Rosén

A new experiment for measuring the reactivity of neutral metal clusters is presented. A low pressure reaction cell is used to measure the sticking ofO2 andD2 gas on small transition metal clusters ofCu, Fe, Co andNi. The experiment yields absolute values for the sticking, at a controlled number of cluster/gas collisions, facilitating comparison with theoretical calculations and other experiments. The most striking result of these preliminary measurements is the difference between oxygen sticking onCoN and onCuN, with the sticking onCuN showing a clear correlation to the electronic shell model, while the sticking onCoN only exhibits a sharp increase with size, reaching sticking probability=1.0 forN>25.


Chemical Physics Letters | 1997

Ionization potentials of oxidized copper clusters

John L. Persson; Mats Andersson; Lotta Holmgren; Thorbjörn Åklint; Arne Rosén

Abstract The ionization potential (IP) of Cu n O 2 clusters ( n = 15−46) has been measured and the shift in IP induced by the adsoprtion of the O 2 molecule evaluated. There are no large discontinuities in the IP of Cu n O 2 , in contrast with the electronic shell closings observed for pure Cu n , but the even-odd alternation in the IP persists upon oxidation. On average, the IP increases after oxidation, with larger shifts for clusters where the pure Cu n have low IP ( n = 21, 41) and small or negative shifts for clusters originally having high IP ( n = 30, 34, 40).


Nanostructured Materials | 1993

Oxidation of small transition metal clusters

Mats Andersson; John L. Persson; Arne Rosén

The initial oxidation of gas phase metal clusters is studied in a new experimental configuration. A beam of neutral metal clusters is produced in a laser vaporization source, and after skimming the beam passes a reaction cell where the clusters undergo one or a few collisions with oxygen molecules. The reaction products are detected with laser ionization and mass spectrometry. We have determined the sticking probability, S, of O2 on FeN, CoN and CuN clusters, with Nκ 10–60. FeN and CoN show a similar size dependence with low sticking probability, S < 0.2, for the smallest sizes, then increasing almost monotonically to Nκ 25, where S levels out at a constant value of 0.7 (FeN) or 1.0 (CoN). CuN shows a different size behavior with reactivity minima for clusters with closed electronic shells.


Catalysis Letters | 2000

Analysis of the kinetics for the H2 + \( - \frac{1}{2}\)O2 ⇌ H2O reaction on a hot Pt surface in the pressure range 0.10–10 Torr

Michael Försth; Frank Eisert; Fredrik Gudmundson; John L. Persson; Arne Rosén

AbstractThe H2 +


Nanostructured Materials | 1995

CO AND O2 reactivity of tungsten clusters

Lotta Holmgren; Martin Andersson; John L. Persson; Arne Rosén


MRS Proceedings | 1994

Metal Cluster Oxidation: Sticking Probabilities and Ionization Potential Shiffs

Mats Andersson; Lotta Holmgren; John L. Persson; Thorbjörn Åklint; Arne Rosén

- \frac{1}{2}


European Physical Journal D | 1993

Investigation of the Zeeman effect in thenp2-configuration elements

John L. Persson


Journal of Catalysis | 1998

OH Gas Phase Chemistry outside a Pt Catalyst

Fredrik Gudmundson; John L. Persson; Michael Försth; Frank Behrendt; Bengt Kasemo; Arne Rosén

O2 ⇌ H2O reaction on platinum at 700 and 1300 K has been studied. A stagnation flow geometry was used with a gas mixture of H2 and O2 at pressures between 0.10 and 10 Torr. Comparing SHG results with simulations using different reaction parameters, it was concluded that

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Arne Rosén

University of Gothenburg

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Michael Försth

Chalmers University of Technology

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Fredrik Gudmundson

Chalmers University of Technology

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Lotta Holmgren

Chalmers University of Technology

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Mats Andersson

Chalmers University of Technology

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Martin Andersson

Chalmers University of Technology

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Thorbjörn Åklint

Chalmers University of Technology

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Rafeef Abugharbieh

University of British Columbia

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Anders Karlström

Chalmers University of Technology

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Bengt Kasemo

Chalmers University of Technology

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