Jon Kapustinsky

Temperature dependence of radiation damage and its annealing in silicon detectors

Silicon detectors at future collider facilities such as the Superconducting Super Collider (SSC) will be exposed to large fluences of both neutral and charged particles, resulting in considerable bulk radiation damage. In order to reduce the increase in leakage current associated with that damage, the proposed operating temperature of the silicon detectors in the SSC Solenoidal Detector Collaboration (SDC) experiment is 0 degrees C. In order to explore any potential complications of operating detectors at 0 degrees C, two sets of detectors were irradiated. One set was kept close to 0 degrees C during the exposure and annealing period, while the other was maintained at room temperature throughout ( approximately 27 degrees C during the exposure, and approximately 23 degrees C during the annealing period). The full depletion voltage and leakage current of the detectors during the irradiation period and over the subsequent annealing period were monitored. It is concluded that detectors will have to be operated at 0 degrees C, and, once damaged, be maintained at 0 degrees C in order to keep their operating voltage at a reasonable value ( >

Front-End module readout and control electronics for the PHENIX multiplicity vertex detector

Front-end module (FEM) readout and control are implemented as modular, high-density, reprogrammable functions in the PHENIX Multiplicity Vertex Detector. FEM control is performed by the heap manager, an FPGA-based circuit in the FEM unit. Each FEM has 256 channels of front-end electronics, readout, and control, all located on an MCM. Data readout, formatting, and control are performed by the heap manager along with 4 interface units that reside outside the MVD detector cylinder. This paper discusses the application of a generic heap manager and the addition of 4 interface module types to meet the specific control and data readout needs of the MVD. Unit functioning, interfaces, timing, data format, and communication rates will be discussed in detail. In addition, subsystem issues regarding mode control, serial architecture and functions, error handling, and FPGA implementation and programming will be presented.

Proton-Induced Radiation Damage in Fast Crystal Scintillators

This paper reports proton-induced radiation damage in fast crystal scintillators. Large size LYSO and CeF3 crystals of 20 and 15 cm long were irradiated by 800 MeV protons at Los Alamos up to

Thin scintillators for ultrafast hard X-ray imaging

3.3times 10^{14}

FPHX: A new silicon strip readout chip for the PHENIX experiment at RHIC

p/cm2 with degradation and recovery of their longitudinal transmittance measured in situ . LYSO plates of

Pixel Multichip Module Development at Fermilab for the PHENIX Experiment

14times 14times 1.5

Improvements in the energy resolution and high-count-rate performance of bismuth germanate

mm3 were irradiated by 67 MeV protons at UC Davis up to

Performance of Crystal Scintillators in a Severe Radiation Environment Caused by Protons

9.5times 10^{13}

Proton-induced radiation damage in BGO, LFS, PWO and a LFS/W/Quartz capillary shashlik cell

p/cm2, and by 24 GeV protons at CERN up to

Gigahertz (GHz) hard x-ray imaging using fast scintillators

6.9times 10^{15}