Jonathan D. Poplawsky

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole wavefunction overlap and improved radiative recombination rate are investigated for nitride LEDs application. The effect of interface abruptness in staggered InGaN QWs on radiative recombination rate is studied. Studies show that the less interface abruptness between the InGaN sub-layers will not affect the performance of the staggered InGaN QWs detrimentally. The growths of linearly-shaped staggered InGaN QWs by employing graded growth temperature grading are presented. The effect of current injection efficiency on IQE of InGaN QWs LEDs and other approaches to reduce dislocation in InGaN QWs LEDs are also discussed. The optimization of both radiative efficiency and current injection efficiency in InGaN QWs LEDs are required for achieving high IQE devices emitting in the green spectral regime and longer.

Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

Imperfections in organometal halide perovskite films such as grain boundaries (GBs), defects, and traps detrimentally cause significant nonradiative recombination energy loss and decreased power conversion efficiency (PCE) in solar cells. Here, a simple layer-by-layer fabrication process based on air exposure followed by thermal annealing is reported to grow perovskite films with large, single-crystal grains and vertically oriented GBs. The hole-transport medium Spiro-OMeTAD is then infiltrated into the GBs to form vertically aligned bulk heterojunctions. Due to the space-charge regions in the vicinity of GBs, the nonradiative recombination in GBs is significantly suppressed. The GBs become active carrier collection channels. Thus, the internal quantum efficiencies of the devices approach 100% in the visible spectrum range. The optimized cells yield an average PCE of 16.3 ± 0.9%, comparable to the best solution-processed perovskite devices, establishing them as important alternatives to growing ideal single crystal thin films in the pursuit toward theoretical maximum PCE with industrially realistic processing techniques.

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8–2.8 and 2.0–3.5 times, respectively, over those of conventional InGaN QW LED.

Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center

We report studies of the excitation mechanism of Eu ions in situ doped during organometallic vapor-phase epitaxy (OMVPE) of GaN. We find that the bright red emission under above-band gap excitation originates primarily from an incorporation site that exhibits high excitation efficiency but occurs in low relative abundance ( 97%).

Ferritic Alloys with Extreme Creep Resistance via Coherent Hierarchical Precipitates.

There have been numerous efforts to develop creep-resistant materials strengthened by incoherent particles at high temperatures and stresses in response to future energy needs for steam turbines in thermal-power plants. However, the microstructural instability of the incoherent-particle-strengthened ferritic steels limits their application to temperatures below 900 K. Here, we report a novel ferritic alloy with the excellent creep resistance enhanced by coherent hierarchical precipitates, using the integrated experimental (transmission-electron microscopy/scanning-transmission-electron microscopy, in-situ neutron diffraction, and atom-probe tomography) and theoretical (crystal-plasticity finite-element modeling) approaches. This alloy is strengthened by nano-scaled L21-Ni2TiAl (Heusler phase)-based precipitates, which themselves contain coherent nano-scaled B2 zones. These coherent hierarchical precipitates are uniformly distributed within the Fe matrix. Our hierarchical structure material exhibits the superior creep resistance at 973 K in terms of the minimal creep rate, which is four orders of magnitude lower than that of conventional ferritic steels. These results provide a new alloy-design strategy using the novel concept of hierarchical precipitates and the fundamental science for developing creep-resistant ferritic alloys. The present research will broaden the applications of ferritic alloys to higher temperatures.

The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers

The nature of Eu incorporation and resulting luminescence efficiency in GaN has been extensively investigated. By performing a comparative study on GaN:Eu samples grown under a variety of controlled conditions, and using a variety of experimental techniques, the configuration of the majority site has been concluded to contain a nitrogen vacancy (VN). The nitrogen vacancy can appear in two symmetries, which has a profound impact on the luminescence and magnetic properties of the sample. The structure of the minority site has also been identified. We propose that, for both sites, the excitation efficiency of the red Eu emission is improved by the presence of donor-acceptor pairs in the close vicinity of the Eu.

Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells

The published external quantum efficiency data of the world-record CdTe solar cell suggests that the device uses bandgap engineering, most likely with a CdTexSe1−x alloy layer to increase the short-circuit current and overall device efficiency. Here atom probe tomography, transmission electron microscopy and electron beam-induced current are used to clarify the dependence of Se content on the photoactive properties of CdTexSe1−x alloy layers in bandgap-graded CdTe solar cells. Four solar cells were prepared with 50, 100, 200 and 400 nm-thick CdSe layers to reveal the formation, growth, composition, structure and photoactivity of the CdTexSe1−x alloy with respect to the degree of Se diffusion. The results show that the CdTexSe1−x layer photoactivity is highly dependent on the crystalline structure of the alloy (zincblende versus wurtzite), which is also dependent on the Se and Te concentrations.

Coke Formation in a Zeolite Crystal During the Methanol-to- Hydrocarbons Reaction as Studied with Atom Probe Tomography

Abstract Understanding the formation of carbon deposits in zeolites is vital to developing new, superior materials for various applications, including oil and gas conversion processes. Herein, atom probe tomography (APT) has been used to spatially resolve the 3D compositional changes at the sub‐nm length scale in a single zeolite ZSM‐5 crystal, which has been partially deactivated by the methanol‐to‐hydrocarbons reaction using 13C‐labeled methanol. The results reveal the formation of coke in agglomerates that span length scales from tens of nanometers to atomic clusters with a median size of 30–60 13C atoms. These clusters correlate with local increases in Brønsted acid site density, demonstrating that the formation of the first deactivating coke precursor molecules occurs in nanoscopic regions enriched in aluminum. This nanoscale correlation underscores the importance of carefully engineering materials to suppress detrimental coke formation.

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

S–Te Interdiffusion within Grains and Grain Boundaries in CdTe Solar Cells

At the CdTe/CdS interface, a significant Te-S interdiffusion has been found a few nanometers into the CdTe grain interiors with scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy. This interdiffusion happens on both as-grown and CdCl2-treated CdTe. S substitution at Te sites has been directly resolved in CdTe with STEM Z-contrast images, which further confirms the S diffusion into CdTe grain interiors. Moreover, when a sufficient amount of S substitutes for Te, a structural transformation from zinc-blende to wurtzite has been observed. In the CdCl2-treated CdTe, Cl segregation has also been found at the interface. STEM electron-beam-induced current shows that the p-n junction occurs a few namometers into the CdTe grains, which is consistent with the S diffusion range we observe. The shift of the p-n junction suggests a buried homojunction which would help reduce nonradiative recombination at the junction. Meanwhile, long-range S diffusion in CdTe grain boundaries (GBs) has been detected, as has Te and Cl diffusion in CdS GBs.