Jonathan D. Yuen

Processing additives for improved efficiency from bulk heterojunction solar cells.

Two criteria for processing additives introduced to control the morphology of bulk heterojunction (BHJ) materials for use in solar cells have been identified: (i) selective (differential) solubility of the fullerene component and (ii) higher boiling point than the host solvent. Using these criteria, we have investigated the class of 1,8-di(R)octanes with various functional groups (R) as processing additives for BHJ solar cells. Control of the BHJ morphology by selective solubility of the fullerene component is demonstrated using these high boiling point processing additives. The best results are obtained with R = Iodine (I). Using 1,8-diiodooctane as the processing additive, the efficiency of the BHJ solar cells was improved from 3.4% (for the reference device) to 5.1%.

Colorimetric detection of DNA, small molecules, proteins, and ions using unmodified gold nanoparticles and conjugated polyelectrolytes

We have demonstrated a novel sensing strategy employing single-stranded probe DNA, unmodified gold nanoparticles, and a positively charged, water-soluble conjugated polyelectrolyte to detect a broad range of targets including nucleic acid (DNA) sequences, proteins, small molecules, and inorganic ions. This nearly “universal” biosensor approach is based on the observation that, while the conjugated polyelectrolyte specifically inhibits the ability of single-stranded DNA to prevent the aggregation of gold-nanoparticles, no such inhibition is observed with double-stranded or otherwise “folded” DNA structures. Colorimetric assays employing this mechanism for the detection of hybridization are sensitive and convenient—picomolar concentrations of target DNA are readily detected with the naked eye, and the sensor works even when challenged with complex sample matrices such as blood serum. Likewise, by employing the binding-induced folding or association of aptamers we have generalized the approach to the specific and convenient detection of proteins, small molecules, and inorganic ions. Finally, this new biosensor approach is quite straightforward and can be completed in minutes without significant equipment or training overhead.

High Performance Weak Donor–Acceptor Polymers in Thin Film Transistors: Effect of the Acceptor on Electronic Properties, Ambipolar Conductivity, Mobility, and Thermal Stability

We have studied the electronic, physical, and transistor properties of a family of donor-acceptor polymers consisting of diketopyrrolopyrrole (DPP) coupled with different accepting companion units in order to determine the effects of donor-acceptor interaction. Using the electronically neutral benzene (B), the weakly accepting benzothiadiazole (BT), and the strongly accepting benzobisthiadiazole (BBT), the accepting strength of the companion unit was systematically modulated. All polymers exhibited excellent transistor performance, with mobilities above 0.1 cm(2)V(-1)s(-1), even exceeding 1 cm(2)V(-1)s(-1) for one of the BBT-containing polymers. We find that the BBT is the strongest acceptor, enabling the BBT-containing polymers to be strongly ambipolar. The BBT moiety also strengthens interchain interactions, which provides higher thermal stability and performance for transistors with BBT-containing polymers as the active layer.

Thermal annealing-induced enhancement of the field-effect mobility of regioregular poly(3-hexylthiophene) films

Polymer field-effect transistors with a field-effect mobility of μ≈0.3cm2s−1V−1 have been demonstrated using regioregular poly(3-hexylthiophene) (rr-P3HT). Devices were fabricated by dip coating the semiconducting polymer followed by annealing at 150°C for 10min. The heat annealed devices exhibit an increased field-effect mobility compared with the as-prepared devices. Morphology studies and analysis of the channel resistance demonstrate that the annealing process increases the crystallinity of rr-P3HT and improves the contact between the electrodes and the P3HT films, thereby increasing the field-effect mobility of the films.Polymer field-effect transistors with a field-effect mobility of μ≈0.3cm2s−1V−1 have been demonstrated using regioregular poly(3-hexylthiophene) (rr-P3HT). Devices were fabricated by dip coating the semiconducting polymer followed by annealing at 150°C for 10min. The heat annealed devices exhibit an increased field-effect mobility compared with the as-prepared devices. Morphology studies and analysis of the channel resistance demonstrate that the annealing process increases the crystallinity of rr-P3HT and improves the contact between the electrodes and the P3HT films, thereby increasing the field-effect mobility of the films.

Relationship between the microscopic morphology and the charge transport properties in poly(3-hexylthiophene) field-effect transistors

We fabricate field-effect transistors (FETs) by depositing a regioregular poly(3-hexylthiophene) (RR-P3HT) active layer via different preparation methods. The solvent used in the polymer film deposition and the deposition technique determine the film microstructure, which ranges from amorphous or granular films to a well-defined fibrillar texture. The crystalline ordering of RR-P3HT into fibrillar structures appears to lead to optimal FET performances, suggesting that fibrils act as efficient “conduits” for the charge carrier transport. Treating the silicon oxide gate insulator with hexamethyldisilazane enhanced the FET performance.

High‐Performance Ambipolar Transistors and Inverters from an Ultralow Bandgap Polymer

High mobility ambipolor organic thin-film transistors based on an ultralow bandgap polymer are presented together with their morphological and optical properties. Hole and electron mobilities of this polymer are of 1.0 cm(2) V(-1) s(-1) and 0.7 cm(2) V(-1) s(-1), respectively. The inverter based on two identical ambipolar transistors exhibits a gain around 35.

Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors

We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (1015 cm−2) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 × 106 A/cm2, and high metallic conductivities, 104 S/cm, in the FET channel; at 4.2 K, the current density is sustained at 107 A/cm2. Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is ≈3.5 cm2·V−1·s−1 at 297 K, comparable with that found in fully crystalline organic devices.

Strong acceptors in donor–acceptor polymers for high performance thin film transistors

Recent progress in the development of conjugated semiconducting polymers for thin film transistor applications has yielded materials with mobilities consistently exceeding 0.1 cm2 V−1 s−1. Even more significant are recent reports of polymers with TFT mobilities surpassing 1 cm2 V−1 s−1. With performance comparable to those of amorphous silicon TFTs, and with improved material stability, one can realistically envision promising future applications of these polymers. In reviewing the development of conjugated semiconducting polymers, two particularly interesting and significant observations are made. First, most of these high-performance materials are donor–acceptor polymers; and second, high mobilities of above 1 cm2 V−1 s−1 generally involve donor–acceptor polymers with strongly electron accepting moieties. The present perspective covers these latter polymers. We will cover the features that are common among these high-performance polymers and discuss unresolved issues that may determine their performance.

Ambipolarity in Benzobisthiadiazole‐Based Donor–Acceptor Conjugated Polymers

A family of four new DA polymers, in which the acceptor moiety benzobisthiadiazole was paired with four different donor moieties, has been synthesized. Surpri-singly, all members of the family exhibit balanced ambipolar behavior, despite polymer to polymer mobilities varying from 10(-4) cm(2) V(-1) s(-1) to 10(-1) cm(2) V(-1) s(-1). Applications in single component CMOS integrated circuits are envisioned.

High performance light emitting transistors

Solution processed light emitting field-effect transistors (LEFETs) with peak brightness exceeding 2500cd∕m2 and external quantum efficiency of 0.15% are demonstrated. The devices utilized a bilayer film comprising a hole transporting polymer, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) and a light emitting polymer, Super Yellow, a polyphenylenevinylene derivative. The LEFETs were fabricated in the bottom gate architecture with top-contact Ca∕Ag as source/drain electrodes. Light emission was controlled by the gate voltage which controls the hole current. These results indicate that high brightness LEFETs can be made by using the bilayer film (hole transporting layer and a light emitting polymer).