Jong Jin Choi

Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,Ti)O3–Pb(Zn1/3Nb2/3)O3 (PZNT) have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

Ubiquitous magneto-mechano-electric generator

Stray magnetic field considered as harmful noise for the human body can be a ubiquitous energy source. We are surrounded with 50/60 Hz parasitic magnetic noise arising from power delivery infrastructure, but it cannot be readily utilized by traditional electromagnetic harvesters. Here, we introduce a novel magneto-mechano-electric (MME) generator with a colossal power density that can turn on 35 LEDs and drive a wireless sensor network under a weak magnetic field of 5–7 × 10−4 T at a low frequency of 60 Hz. The MME generator is a cantilever structured magnetoelectric (ME) laminate composite in which the 〈011〉 oriented anisotropic single crystal fiber composite (SFC) is bonded to Ni plate and Nd permanent magnet proof mass. The ME laminate composite has a strong ME coupling (αME ∼ 160 V cm−1 Oe−1) even without magnetic bias due to the intrinsic property of Ni. The MME generator is also found to exhibit a colossal output power density of 46 mW cm−3 Oe−2 under a weak magnetic field of 1.6 × 10−4 T at 60 Hz. This MME generator can be a ubiquitous power source for wireless sensor networks, low power electric devices, and wireless charging systems by harvesting tiny amounts of parasitic magnetic energy from our living environment.

Stress-controlled Pb(Zr0.52Ti0.48)O3 thick films by thermal expansion mismatch between substrate and Pb(Zr0.52Ti0.48)O3 film

Polycrystalline Pb(Zr0.52Ti0.48)O3 (PZT) thick films (thickness ∼10 μm) were successfully fabricated by using a novel aerosol deposition technique on Si wafer, sapphire, and single crystal yitria stabilized zirconia (YSZ) wafer substrates with Pt electrodes and their dielectric, ferroelectric, and piezoelectric properties, and in-plane stresses were investigated. The films with different stress conditions were simply controlled by the coefficient of thermal expansion (CTE) misfit of PZT films and substrates. The results showed that the films bearing in-plane compressive stress deposited on the YSZ and sapphire substrates have superior dielectric, ferroelectric (∼90%), and piezoelectric (>200%) properties over that of the Si wafer. Among these three substrates, YSZ shows superior properties of the PZT films. However, films on Si wafer with tensile stress present lower properties. We believed that in-plane compressive stresses within the films are benefited, the formation of c-domain parallel to the thickne...

Giant Magnetoelectric Coefficient in 3–2 Nanocomposite Thick Films

In this study, we report the success in synthesis and characterization of magneto-electric (ME) 3–2 nanocomposite thick films using aerosol-deposition (AD). Piezoelectric and magnetostrictive materials were simultaneously deposited on a platinized silicon substrate using AD method and a 13-µm-thick nanocomposite film was realized with repeatable nozzle scanning. Upon annealing, magnetostrictive phase was found to form a layered structure inside the piezoelectric matrix. Detailed microstructural analysis revealed the connectivity of individual phases. This nanocomposite thick film was found to exhibit the ME coefficient of the order of 150 mV cm-1 Oe-1 which is significantly higher in comparison to other results reported in literature on ME thin/thick films.

Enhanced domain contribution to ferroelectric properties in freestanding thick films

We report the success in fabricating clamped, “island,” and freestanding 10 μm thick piezoelectric films using aerosol deposition. The deposition was conducted at room temperature by impinging the piezoelectric particles flowing through the nozzle onto platinized silicon (Pt/Ti/SiO2/Si) substrate and crystallization was conducted by annealing at 700 °C. Freestanding films were synthesized by increasing the cooling rate from annealing temperature to room temperature which resulted in large internal stress between the substrate and film interface. Dielectric and ferroelectric characterizations showed enhanced ferroelectric performance of freestanding films as compared to continuous or clamped film which was associated to increased domain contribution due to decrease in degree of clamping as further confirmed by piezoforce microscopy.

Upshift of Phase Transition Temperature in Nanostructured PbTiO3 Thick Film for High Temperature Applications

Thick polycrystalline pure PbTiO3 films with nano size grains were synthesized for the first time by aerosol deposition. Annealed 7 μm thick films exhibit well-saturated ferroelectric hysteresis loops with a remanent polarization and coercive field of 35 μC/cm(2) and 94 kV/cm, respectively. A large-signal effective d33,eff value of >60 pm/V is achieved at room temperature. The measured ferroelectric transition temperature (Tc) of the films ∼550 °C is >50 °C higher than the reported values (∼490 °C) for PbTiO3 ceramics. First-principles calculations combined with electron energy loss spectroscopy (EELS) and structural analysis indicate that the film is composed of nano size grains with slightly decreased tetragonality. There is no severe off-stoichiometry, but a high compressive in-plane residual stress was observed in the film along with a high transition temperature and piezoelectric response. The ferroelectric characteristics were sustained until 200 °C, providing significant advancement toward realizing high temperature piezoelectric materials.

Unleashing the Full Potential of Magnetoelectric Coupling in Film Heterostructures

A record-high, near-theoretical intrinsic magnetoelectric (ME) coupling of 7 V cm-1 Oe-1 is achieved in a heterostructure of piezoelectric Pb(Zr,Ti)O3 (PZT) film deposited on magnetostrictive Metglas (FeBSi). The anchor-like, nanostructured interface between PZT and Metglas, improved crystallinity of PZT by laser annealing, and optimum volume of crystalline PZT are found to be the key factors in realizing such a giant strain-mediated ME coupling.

Electrical Properties of Lead Zinc Niobate - Lead Zirconate Titanate Thick Films Formed by Aerosol Deposition Process

Lead zinc niobate (PZN) added lead zirconate titanate (PZT) thick films with thickness of 5~10 μm were fabricated on silicon and sapphire substrates using aerosol deposition method. The contents of PZN were varied from 0, 20 and 40 %. The as deposited film had fairly dense microstructure without any crack, and showed only a perovskite single phase formed with nano-sized grains. The as-deposited films on silicon were annealed at temperatures of 700oC, and the films deposited on sapphire were annealed at 900oC in the electrical furnace. The effects of PZN addition on the microstructural evolution were observed using FE-SEM and HR-TEM, and dielectric and ferroelectric properties of the films were characterized using impedance analyzer and Sawyer-Tower circuit, respectively. The PZN added PZT film showed poor electrical properties than pure PZT film when the films were coated on silicon substrate and annealed at 700oC, on the other hand, the PZN added PZT film showed higher remanent polarization and dielectric constant values then pure PZT film when the films were coated on sapphire and annealed at 900oC. The ferroelectric and dielectric characteristics of 20% PZN added PZT films annealed at 900oC were comparable with the values obtained from bulk ceramic specimen with same composition sintered at 1200oC.

Dielectric behavior of aerosol-deposited Mn-modified PZT-PZN thick films

We report the dielectric and ferroelectric behavior of thick films, ∼10 µm, synthesized by aerosol deposition. The base composition of the films was selected to be 0.9Pb(Zr0.52Ti0.48)O3–0.1Pb(Zn1/3Nb2/3)O3 (PZT–PZN), which was modified with Mn to 0.9Pb(Zr0.52Ti0.48)O3–0.1Pb(Zn1/3Nb2/3) O3–0.52 wt% MnO2 (PZT–PZN–Mn) in order to induce hardening. The polarization dynamics of the synthesized films was modeled using the theory developed for magnetic glassy systems. It was found that the substitution of Mn significantly (1) enhances the relaxation time, (2) reduces the magnitude of dielectric constant and dielectric loss, and (3) enhances the internal bias field. The results indicate the presence of domain wall pinning by the formation of defect dipoles.