Jonghee Yang

Field Emission and Electrical Properties of Perovskite

We investigate characteristic field emission properties of methyl ammonium mixed-halide perovskite (CH3NH3PbI3-xClx) and their current change under one laser pulse. To analyze these properties, we fabricated inverted-type mixed-halide perovskite solar cells which exhibit a device efficiency of 9.31% under A.M 1.5 condition. Under one laser pulse varying from 420 nm to 580 nm, perovskite layer considerably reacted from 420 nm to 440 nm and then gradually decreased in current. A turnon field of 5.56 V and a field enhancement factor of 3183 were obtained from one spin-coating perovskite layer and in eight times of perovskite spin-coating cycles, a turn-on field of 6.70 V and a field enhancement factor of 5110 were observed.

Photocurrent Enhancement of CdSe Quantum-Dot Sensitized Solar Cells Incorporating Single-Walled Carbon Nanotubes

We demonstrate quantum-dot sensitized solar cells (QDSSCs) which have colloidal CdSe quantum dots (TOPO-CdSe) as a sensitizer onto mesoporous TiO2 photoanodes. CdS quantum-dot (QD) layer plays a role of buffer layer for direct adsorption of TOPO-CdSe. We incorporate single-walled carbon nanotubes with TiO2 photoanode of our QDSSCs to facilitate efficient charge transfer. Shortcircuit current densities (Jsc) of our QDSSCs are enhanced while other parameters are maintained. Furthermore, we apply inert N2 pressure onto our sensitized photoanodes and observe 44% of Jsc enhancement with respect to pristine sample. Consequently, light-harvesting efficiency of our QDSSCs are increased. Significant series resistance reduction is observed from electrochemical impedance spectroscopy, indicating better interface contact between TiO2 photoanode and TOPOCdSe QD sensitizer are achieved.

Conductivity Properties of Single-Walled Carbon Nanotubes Upon the Encapsulation of TTF and TCNQ

N-type and p-type single-walled carbon nanotubes (SWNTs) were formed via the encapsulation of tetrathiafulvalene (TTF) and 7,7,8,8-tetracyano-p-quinodimethane (TCNQ) inside SWNTs, respectively. Raman, near-infrared, and X-ray photoelectron spectrometer were used to confirm the encapsulation. From measurements of the current-voltage curves in a vacuum, it was revealed that current of TTF-encapsulated SWNTs decreased and TCNQ-encapsulated SWNTs increased comparing with that of pristine SWNTs. This was resulted from electron-donating (TTF) and withdrawing (TCNQ) character into SWNTs.

Suppressed Interfacial Charge Recombination of PbS Quantum Dot Photovoltaics by Graphene Incorporated into ZnO Nanoparticles

Single-layer graphene (SLG) was incorporated into ZnO nanoparticles (NPs), and use of this material in photovoltaic devices generated significant changes. The Fermi level of ZnO NPs underwent a downshift, whereas the conduction and valence bands were maintained with increasing SLG concentrations. Furthermore, the effective defect densities were reduced and carrier mobility was enhanced. Colloidal quantum dot photovoltaics (CQDPVs) with the SLG-incorporated ZnO NP layer as an electron transporting layer achieved significant performance enhancement. Poor performing CQDPVs were also observed with incorporation of an excess amount of SLG. This trend paralleled the interfacial charge recombination trends of CQDPVs. Effective suppression of interfacial recombination was achieved for CQDPVs with an appropriate SLG concentration, whereas dramatically increased interfacial recombination was observed for CQDPVs with an excess of SLG. For CQDPVs with appropriate SLG incorporation, efficient defect passivation and enhanced electron mobility of ZnO NPs facilitated loss-less electron transfer and efficient electron extraction without compromising the favorable energy level alignment. Excess SLG incorporation led to an increase in recombination within the PbS QD layer due to the presence of an energy barrier. This simple and powerful strategy provides an effective method for modulating the interfacial properties of CQDPVs.