Joon Young Yang

A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process

We propose a new five-mask etch-stopper amorphous In-Ga-Zn-O semiconductor pixel structure for a high-resolution advanced-high-performance in-plane-switching (AH-IPS) display device. A short-channel length (under 5 μm) thin-film transistor (TFT) was successfully fabricated using a selfaligned damage preventing layer. The linear field effect mobility of the 4-μm channel length TFT was 10.4 cm2/V · s. Using the proposed structure, we successfully fabricated a 9.7-in AH-IPS quad-extended graphics array liquid-crystal displays panel.

49.4: Advanced RGBW Panel with High Planarization Overcoat Material

In this study, new manufacturing method of RGBW LCDs is introduced. It can solve problems which are increasing photo-masking step and color temperature difference between RGB sub-pixel and W sub-pixel in RGBW panel.

Longitudinal Relationships between Planned Happenstance Skills and Life Adjustment and the Moderating Role of Career Barriers.

The purpose of the present study was to examine the longitudinal relationships between planned happenstance skills (PHS) and life adjustment and to examine whether this relationship was moderated by the degree of career barriers. The participants were 307 Korean college students going through a school-to-work transition. The results showed that PHS preceded and were positively associated with life adjustment. Additionally, the association between PHS and life adjustment differed by the levels of career barriers; individuals with greater PHS were more likely to adjust well in life even when they perceived high career barriers. The findings suggest empirical support for planned happenstance theory. Implications regarding career counseling interventions for college students in a school-to-work transition are discussed.