Jorj I. Owen

Analyzing nanotextured transparent conductive oxides for efficient light trapping in silicon thin film solar cells

Nanotextured contact layers are used in silicon thin film solar cells for increasing the short circuit current and conversion efficiency. We developed an approach to analyze random nanotextured surfaces by atomic force microscopy and image segmentation. It was used to investigate sputtered and wet chemically etched aluminum doped zinc oxide films with various morphologies. The information extracted from the surfaces was correlated with optical simulations of periodically textured thin film solar cells. The results from the surface analysis and optical simulations were also compared with the experimental results obtained for amorphous silicon solar cells prepared on the nanotextured substrates.

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films

The transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.

High mobility annealing of Transparent Conductive Oxides

To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Ga- or Al- doped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and Ga doped zinc magnesium oxide (ZnMgO:Ga). All these films were grown by magnetron sputtering. During the annealing process all TCO films were capped with 50 nm of amorphous silicon in order to protect the films from environmental impact. Increase in mobility up to 72 cm2/Vs and low resistivity of 1.6 × 10−4 Ωcm was achieved for ZnO:Al after annealing at 650°C for 24 h. Independent of the deposition conditions and doping or alloying material almost all ZnO based films show a consistent improvement in mobility. Also for ITO films a decrease in resistivity with partially improved mobility was found after annealing. However, not all ITO films show consistent improvement, but carrier density above 1021 cm−3 while ZnO films show no clear trend for carrier density but a remarkable increase in mobility. Thus we propose the healing of defects and the activation of donors to be most significant effects for ZnO and ITO films, respectively.