Jose A. Garrido

Graphene Transistors for Bioelectronics

This paper provides an overview on graphene solution-gated field-effect transistors (SGFETs) and their applications in bioelectronics. The fabrication and characterization of arrays of graphene SGFETs is presented and discussed with respect to competing technologies. To obtain a better understanding of the working principle of solution-gated transistors, the graphene-electrolyte interface is discussed in detail. The in vitro biocompatibility of graphene is assessed by primary neuron cultures. Finally, bioelectronic experiments with electrogenic cells are presented, confirming the suitability of graphene to record the electrical activity of cells.

Flexible graphene transistors for recording cell action potentials

Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. In this paper we demonstrate the fabrication of flexible arrays of graphene SGFETs on polyimide, a biocompatible polymeric substrate. We investigate the transistors transconductance and intrinsic electronic noise which are key parameters for the device sensitivity, confirming that the obtained values are comparable to those of rigid graphene SGFETs. Furthermore, we show that the devices do not degrade during repeated bending and the transconductance, governed by the electronic properties of graphene, is unaffected by bending. After cell culture, we demonstrate the recording of cell action potentials from cardiomyocyte-like cells with a high signal-to-noise ratio that is higher or comparable to competing state of the art technologies. Our results highlight the great capabilities of flexible graphene SGFETs in bioelectronics, providing a solid foundation for in-vivo experiments and, eventually, for graphene-based neuroprosthetics.

Photoluminescence in transmutation doped liquid‐phase‐epitaxial gallium arsenide

Photoluminescence and Hall‐effect measurements on neutron transmutation doped liquid‐phase‐epitaxial GaAs layers were performed. The obtained results clearly point out that at least a part of the Ge atoms introduced by transmutation of Ga leave their original lattice site behaving as acceptors. The probable cause of these displacements are the recoils during γ and β emissions from the unstable Ga isotopes.

High surface area graphene foams by chemical vapor deposition

Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. Several preparation techniques have been reported to fabricate 3D graphene-based macroscopic structures for energy storage applications such as supercapacitors. Although reaserch has been focused so far on achieving either high specific capacitance or high volumetric capacitance, much less attention has been dedicated to obtain high specific and high volumetric capacitance simultaneously. Here, we present a facile technique to fabricate graphene foams (GF) of high crystal quality with tunable pore size grown by chemical vapor deposition. We exploited porous sacrificial templates prepared by sintering nickel and copper metal powders. Tuning the particle size of the metal powders and the growth temperature allow fine control of the resulting pore size of the 3D graphene-based structures smaller than 1 μm. The as-produced 3D graphene structures provide a high volumetric electric double layer capacitance (165 mF cm−3). High specific capacitance (100 Fg−1) is obtained by lowering the number of layers down to single layer graphene. Furthermore, the small pore size increases the stability of these GFs in contrast to the ones that have been grown so far on commercial metal foams. Electrodes based on the as-prepared GFs can be a boost for the development of supercapacitors, where both low volume and mass are required.

On the exploitation of thermally stimulated capacitance measurements

A new method for using thermally stimulated capacitance measurement has been developed to study deep levels. This method, based on curve fitting, improves on the original method in two ways. First, it represents a considerable time saving because only a single cooling and heating cycle is needed, and second, this method is less sensitive to possible errors in the determination of the true temperature of the device.

Single-layer graphene modulates neuronal communication and augments membrane ion currents

The use of graphene-based materials to engineer sophisticated biosensing interfaces that can adapt to the central nervous system requires a detailed understanding of how such materials behave in a biological context. Graphene’s peculiar properties can cause various cellular changes, but the underlying mechanisms remain unclear. Here, we show that single-layer graphene increases neuronal firing by altering membrane-associated functions in cultured cells. Graphene tunes the distribution of extracellular ions at the interface with neurons, a key regulator of neuronal excitability. The resulting biophysical changes in the membrane include stronger potassium ion currents, with a shift in the fraction of neuronal firing phenotypes from adapting to tonically firing. By using experimental and theoretical approaches, we hypothesize that the graphene–ion interactions that are maximized when single-layer graphene is deposited on electrically insulating substrates are crucial to these effects.Single-layer graphene increases neuron excitability and firing activity by influencing the distribution of potassium ions at the cellular interface.

Electrochemical characterization of GaN surface states

In this work, we present a systematic study of the electrochemical properties of metal-organic chemical vapor deposition and hybrid vapor phase epitaxy grown n-type GaN in aqueous electrolytes. For this purpose, we perform cyclic voltammetry and impedance spectroscopy measurements over a wide range of potentials and frequencies, using a pure aqueous electrolyte and adding two different types of redox couples, as well as applying different surface treatments to the GaN electrodes. For Ga-polar GaN electrodes, the charge transfer to an electrolyte is dominated by surface states, which are not related to dislocations and are independent of the specific growth technique. These surface states can be modified by the surface treatment; they are generated by etching in HCl and are passivated by oxidation. Different surface defect states are present on N-polar GaN electrodes which do not significantly contribute to the charge transfer across the GaN/electrolyte interface.

α,ω-dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors

While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. In this work, solution-gated organic field-effect transistors (SGOFETs) based on the molecule α,ω-dihexyl-sexithiophene (DH6T) are presented as promising platforms for in-electrolyte sensing. Thin films of DH6T were investigated with regard to the influence of the substrate temperature during deposition on the grain size and structural order. The performance of SGOFETs can be improved by choosing suitable growth parameters that lead to a two-dimensional film morphology and a high degree of structural order. Furthermore, the capability of the SGOFETs to detect changes in the pH or ionic strength of the gate electrolyte is demonstrated and simulated. Finally, excellent transistor stability is confirmed by continuously operating the device over a...

Growth solution baking effects on the residual impurities in GaAs liquid‐ phase‐epitaxy layers

Unintentionally doped liquid phase epitaxial GaAs layers have been grown from different Ga solutions baked for times between 6 and 48 h. From photoluminescence measurements C and Si have been identified as the main residual impurities. Hall‐effect measurements show a reduction of the overall impurity concentration and an increase of the compensation ratio with the baking time. The combination of photoluminescence and Hall‐effect results suggests a decrease of the contamination by carbon and probably by silicon of the grown layers as the duration of the heat treatment increases.

Lipid Monolayer Formation and Lipid Exchange Monitored by a Graphene Field-Effect Transistor

Anionic and cationic lipids are key molecules involved in many cellular processes; their distribution in biomembranes is highly asymmetric, and their concentration is well-controlled. Graphene solution-gated field-effect transistors (SGFETs) exhibit high sensitivity toward the presence of surface charges. Here, we establish conditions that allow the observation of the formation of charged lipid layers on solution-gated field-effect transistors in real time. We quantify the electrostatic screening of electrolyte ions and derive a model that explains the influence of charged lipids on the ion sensitivity of graphene SGFETs. The electrostatic model is validated using structural information from X-ray reflectometry measurements, which show that the lipid monolayer forms on graphene. We demonstrate that SGFETs can be used to detect cationic lipids by self-exchange of lipids. Furthermore, SGFETs allow measuring the kinetics of layer formation induced by vesicle fusion or spreading from a reservoir. Because of the high transconductance and low noise of the electrical readout, we can observe characteristic conductance spikes that we attribute to bouncing-off events of lipid aggregates from the SGFET surface, suggesting a great potential of graphene SGFETs to measure the on-off kinetics of small aggregates interacting with supported layers.