José C. Pedro

A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches

This paper presents a comparative overview of the most important approaches presented to address the behavioral modeling of microwave and wireless power amplifiers (PAs). Starting from a theoretical framework of recursive and nonrecursive nonlinear filters, it proposes a classification of the various PA behavioral models, discussing their abilities to represent the different effects observed in practical circuits. Using that formal procedure, one explains how it was possible to integrate a wide range of behavioral modeling activities and to show that some of them, which at first glance seemed to be quite different, are, indeed, identical in their modeling capabilities.

Dynamic Deviation Reduction-Based Volterra Behavioral Modeling of RF Power Amplifiers

A new representation of the Volterra series is proposed, which is derived from a previously introduced modified Volterra series, but adapted to the discrete time domain and reformulated in a novel way. Based on this representation, an efficient model-pruning approach, called dynamic deviation reduction, is introduced to simplify the structure of Volterra-series-based RF power amplifier behavioral models aimed at significantly reducing the complexity of the model, but without incurring loss of model fidelity. Both static nonlinearities and different orders of dynamic behavior can be separately identified and the proposed representation retains the important property of linearity with respect to series coefficients. This model can, therefore, be easily extracted directly from the measured time domain of input and output samples of an amplifier by employing simple linear system identification algorithms. A systematic mathematical derivation is presented, together with validation of the proposed method using both computer simulation and experiment

A comprehensive explanation of distortion sideband asymmetries

This paper presents a comprehensive study of intermodulation-distortion response asymmetries often observed in microwave nonlinear systems subject to a two-tone or multitone test. The reasons for the different amplitudes of the two adjacent tones are first investigated under small- and large-signal regimes, using a general circuit with frequency-dependent embedding impedances and resistive and reactive nonlinearities. It is shown that this intriguing phenomenon can be mainly attributed to the terminating impedances at the baseband or difference frequencies. Multitone behavior is also addressed and its main differences from the two-tone case explained. Those theoretical conclusions are then extrapolated for real circuits and validated by measured results obtained from microwave power amplifiers of two different technologies, i.e., a GaAs MESFET and an Si bipolar junction transistor.

Large- and small-signal IMD behavior of microwave power amplifiers

In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis. The variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated. This nonlinear distortion model enabled the design of power amplifiers specially tailored to present a desired IMD versus drive-level pattern. For practical validation purposes, a MESFET case study and an illustrative application example are presented.

Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model

An accurate characterization of the nonlinear distortion caused by the Ids(Vgs,Vds) current in a MESFET, does not allow the common approach of splitting this nonlinear equivalent circuit element in two voltage dependent nonlinear current sources, Gm(Vgs) and Gds(Vds). By an improved laboratory characterization procedure, it was possible to extract the cross terms of the Ids(Vgs,Vds) Taylor series expansion. Measurements and Volterra series simulations, made at 2 GHz, have shown that they can give an important contribution to the prediction and understanding of MESFETs intermodulation load-pull behavior. >

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this knowledge, a new empirical large-signal model with improved capability of predicting IMD in LDMOS amplifiers is presented. The model is verified against various measurements at low as well as high frequency in a class-AB power amplifier circuit.

A comprehensive analysis of IMD behavior in RF CMOS power amplifiers

This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD) behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small- and large-signal operation regimes. Especially, a new, simple, large-signal behavioral IMD analysis method is presented that allows the mechanisms dominant for IMD generation to be identified and their individual contributions to be studied. By combining these analyses, typical IMD versus input power characteristics of MOSFET PAs can be predicted and understood for different classes of operation. Various measurements made on a 950-MHz RF CMOS PA are used to demonstrate typical behavior and validate the proposed theory. Prediction of IMD using a standard CMOS transistor model is also evaluated and is shown to give good agreement with the measurements.

Two-tone IMD asymmetry in microwave power amplifiers

This paper presents the first study of the relation between the IMD asymmetries, often observed in almost all power amplifiers subject to a two-tone test, and the nonlinear characteristics of their active devices. First, the reasons for the different amplitudes of the two adjacent tones are investigated using a general circuit with frequency dependent embedding impedances, and resistive and reactive nonlinearities. Those theoretical conclusions are then extrapolated for real circuits, and validated by comparing results obtained from nonlinear simulation to laboratory measurements of a microwave power amplifier.

The Linearity-Efficiency Compromise

This article attempts to improve the average efficiency and linearize the work-horse of RF power amplification- the class-B (or class AB) PA-relying, for example, on predistortion, dynamic load modulation or ET. Nevertheless, whenever higher efficiencies are desired, the current-mode class-B PA must be replaced by switchedmode PAs (for example, class-E or class-F), completely modifying the paradigm of RF amplification. In fact, as these are saturated circuits, they cannot respond to excitations of variable amplitude; and thus the original signal envelope must be restored by operating the PA as an AM modulator via dynamic supply adaptation. A good example of this is the EER arrangement.

Designing multisine excitations for nonlinear model testing

This paper deals with the design of bandpass multisine excitations appropriate for microwave nonlinear model testing. A formal analysis showed that if the output power spectral density of a general nonlinear dynamic system is used as a metric for signal similarity, then it is possible to derive a set of statistical characteristics to be approximated. Using these nth-order extensions of the autocorrelation or the power spectral-density functions as the approximation goals, the multisine design problem is formulated as an optimization scheme where the various tone amplitudes and phases become the target design variables.