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Dive into the research topics where José P. M. Serbena is active.

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Featured researches published by José P. M. Serbena.


Applied Physics Letters | 2009

Very high magnetocurrent in tris-(8-hydroxyquinoline) aluminum-based bipolar charge injection devices

Abd R. B. M. Yusoff; Wilson Jose da Silva; José P. M. Serbena; Michelle S. Meruvia; Ivo A. Hümmelgen

Bipolar devices constructed using 60nm thick tris-(8-hydroxyquinoline) aluminum (Alq3) thin films sandwiched between a 200nm thick sulfonated polyaniline hole-injection electrode and Al∕Ca electron-injection electrode show very high (up to 103%) magnetocurrent values. True-hole-only and true-electron-only Alq3-based devices that make use of Si as charge carrier collecting electrode, and Al∕Ca as electron injecting electrode or Au as hole injecting electrode, are also proposed, prepared, and characterized. In these true-single-carrier devices magnetocurrent is not observed. This result provides strong evidence that bipolar injection is a necessary condition for very high magnetocurrent observation in Alq3.


Brazilian Journal of Physics | 2005

Efficient organic light-emitting diodes with fluorine-doped tin-oxide anode and electrochemically synthesized sulfonated polyaniline as hole transport layer

Adriano R. V. Benvenho; José P. M. Serbena; Rudolf Lessmann; Ivo A. Hümmelgen; Regina M. Q. Mello; Rosamaria W. C. Li; Jamile H. Cuvero; Jonas Gruber

In this work we report efficiency measurements on light-emitting diodes with electrochemically synthesized sulfonated polyaniline as hole transport layer. The anode used in our devices is fluorine-doped tin oxide, the blocking layer is electrochemically synthesized poly(9,9-dioctyl-1,4-fluorenylenevinylene) and the electron transporting material and emitter is tris-(8-hydroxyquinoline) aluminum. Sulfonated polyaniline based devices presented efficiency of 0.79 cd/A.


Journal of Physics D | 2014

SeP hole injection layer for devices based on organic materials

José P. M. Serbena; K.D. Machado; M C Siqueira; Ivo A. Hümmelgen; R J O Mossanek; G B de Souza; J. H. D. da Silva

Selenium : phosphour (SeP) thin films produced by thermal sublimation in vacuum are used as hole injection layers (HILs) in tris(8-hydroxyquinolinato) aluminum (Alq3) based devices. These devices are constructed in the sandwich structure substrate/HIL/Alq3/Al using three different substrate electrodes: fluorine doped tin oxide, Au, and indium tin oxide. The obtained electrical measurements indicate a better injection of positive charge carriers using the SeP layer. Syncrotron radiation x-ray photoelectron experiments allowed the determination of the work function of SeP. The obtained value (Φ = 5.6 eV) is close to the HOMO energy level of Alq3 and is consistent with the better positive charge injection. The thermionic injection process is suggested to be responsible for the charge injection from the different substrate electrodes into the SeP material. From transmittance measurements it was possible to calculate the refractive index and absorption coefficient as a function of wavelength, and to estimate the optical band gap (Eg = 1.9 eV). The latter and the measured work function were used in the construction of an energy level diagram of the SeP thin films used as HILs in organic devices. The hole injection efficiency of the produced films are compared with results using poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT : PSS).


Journal of Materials Science: Materials in Electronics | 2016

Electronic and optical properties of amorphous GaSe thin films

M.C. Siqueira; K.D. Machado; José P. M. Serbena; Ivo A. Hümmelgen; S. F. Stolf; C. G. G. de Azevedo; J. H. D. da Silva

The eletronic and optical properties of amorphous GaSe thin films produced by vacuum evaporation were investigated using X-ray photoemission spectroscopy (XPS) and transmittance spectroscopy techniques. XPS measurements allowed the determination of the valence band energy and showed the chemical bonding and the charge transfer between Se and Ga atoms. Transmittance measurements allowed the determination of the optical gap, refractive index and extinction coefficient in the low and high absorption regions. Using the Wemple and DiDomenico single oscillator model we also found the oscillator and the dispersive energies. From the valence band and optical gap energies, the conduction band was found and an energy level diagram for f-GaSe is proposed.


Journal of Materials Science: Materials in Electronics | 2007

Synthesis, morphology and device characterizations of a new organic semiconductor based on 2,6-diphenylindenofluorene

Tayebeh Hadizad; Jidong Zhang; Donghang Yan; Zhi Yuan Wang; José P. M. Serbena; Michelle S. Meruvia; Ivo A. Hümmelgen


Small | 2006

Hybrid Permeable-Base Transistors Based on an Indenofluorene Derivative†

José P. M. Serbena; Ivo A. Hümmelgen; Tayebeh Hadizad; Zhi Yuan Wang


Organic Electronics | 2014

All-organic vertical transistor in an analogous n-semiconductor/metal/p-semiconductor trilayer structure

Ana C B Tavares; José P. M. Serbena; Ivo A. Hümmelgen; Michelle S. Meruvia


Journal of Solid State Electrochemistry | 2003

Electrochemical preparation of poly(p-phenylene) thin films

Regina M. Q. Mello; José P. M. Serbena; Adriano R. V. Benvenho; Ivo A. Hümmelgen


Journal of Solid State Electrochemistry | 2014

Magnetoresistance in electrochemically deposited polybithiophene thin films

J. de F. P. Souza; E. L. Kowalski; L. C. Akcelrud; José P. M. Serbena


Journal of Nanoscience and Nanotechnology | 2010

Hybrid vertical architecture transistor with 2,6-diphenylindenofluorene based emitter and base permeability controlled by polystyrene spheres lithography.

Lucieli Rossi; José P. M. Serbena; Michelle S. Meruvia; Ivo A. Hümmelgen; Elis Moura Stori; Cyro Ketzer Saul; Zhi Yuan Wang

Collaboration


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Ivo A. Hümmelgen

Federal University of Paraná

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Michelle S. Meruvia

Federal University of Paraná

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K.D. Machado

Federal University of Paraná

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Ana C B Tavares

Federal University of Paraná

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E. L. Kowalski

Federal University of Paraná

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Jonas Gruber

University of São Paulo

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L. C. Akcelrud

Federal University of Paraná

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