Joseph G. Tischler

Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots.

We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to negative with a charge-tunable heterostructure. Negative photoluminescence polarization memory is enhanced by optical pumping of ground state electron spins, which we prove with the first measurements of the Hanle effect on an individual quantum dot. We use the Overhauser effect in a high longitudinal magnetic field to demonstrate efficient optical pumping of nuclear spins for all three charge states of the quantum dot.

Graded band gap for dark-current suppression in long- wave infrared W-structured type-II superlattice photodiodes

A new W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due to tunneling and generation-recombination processes. The long-wave infrared (LWIR) devices display 19%–29% quantum efficiency and substantially reduced dark currents. The median dynamic impedance-area product of 216Ωcm2 for 33 devices with 10.5μm cutoff at 78K is comparable to that for state-of-the-art HgCdTe-based photodiodes. The sidewall resistivity of ≈70kΩcm for untreated mesas is also considerably higher than previous reports for passivated or unpassivated type-II LWIR photodiodes, apparently indicating self-passivation by the graded band gap.

Enhanced multiple exciton generation in quasi-one-dimensional semiconductors.

The creation of a single electron-hole pair (i.e., exciton) per incident photon is a fundamental limitation for current optoelectronic devices including photodetectors and photovoltaic cells. The prospect of multiple exciton generation per incident photon is of great interest to fundamental science and the improvement of solar cell technology. Multiple exciton generation is known to occur in semiconductor nanostructures with increased efficiency and reduced threshold energy compared to their bulk counterparts. Here we report a significant enhancement of multiple exciton generation in PbSe quasi-one-dimensional semiconductors (nanorods) over zero-dimensional nanostructures (nanocrystals), characterized by a 2-fold increase in efficiency and reduction of the threshold energy to (2.23 ± 0.03)E(g), which approaches the theoretical limit of 2E(g). Photovoltaic cells based on PbSe nanorods are capable of improved power conversion efficiencies, in particular when operated in conjunction with solar concentrators.

W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency

Results are presented for an enhanced type-II W-structured superlattice (WSL) photodiode with an 11.3μm cutoff and 34% external quantum efficiency (at 8.6μm) operating at 80K. The new WSL design employs quaternary Al0.4Ga0.49In0.11Sb barrier layers to improve collection efficiency by increasing minority-carrier mobility. By fitting the quantum efficiencies of a series of p-i-n WSL photodiodes with background-doped i-region thicknesses varying from 1to4μm, the authors determine that the minority-carrier electron diffusion length is 3.5μm. The structures were grown on semitransparent n-GaSb substrates that contributed a 35%–55% gain in quantum efficiency from multiple internal reflections.

Low-Loss, Extreme Subdiffraction Photon Confinement via Silicon Carbide Localized Surface Phonon Polariton Resonators

Plasmonics provides great promise for nanophotonic applications. However, the high optical losses inherent in metal-based plasmonic systems have limited progress. Thus, it is critical to identify alternative low-loss materials. One alternative is polar dielectrics that support surface phonon polariton (SPhP) modes, where the confinement of infrared light is aided by optical phonons. Using fabricated 6H-silicon carbide nanopillar antenna arrays, we report on the observation of subdiffraction, localized SPhP resonances. They exhibit a dipolar resonance transverse to the nanopillar axis and a monopolar resonance associated with the longitudinal axis dependent upon the SiC substrate. Both exhibit exceptionally narrow linewidths (7-24 cm(-1)), with quality factors of 40-135, which exceed the theoretical limit of plasmonic systems, with extreme subwavelength confinement of (λ(res)3/V(eff))1/3 = 50-200. Under certain conditions, the modes are Raman-active, enabling their study in the visible spectral range. These observations promise to reinvigorate research in SPhP phenomena and their use for nanophotonic applications.

Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor deposition system on Si- and C-face 4H SiC substrates at 1200-1600 degrees C. Although the vacuum level and heating methods are different, graphene films produced by the two methods are chemically similar with the RF furnace annealing typically producing thicker graphene films than UHV. We observe, however, that the formation of graphene on the two faces is different with the thicker graphene films on the C-face RF samples having higher mobility. The FIR-MT showed a 0(-1) --> 1(0) Landau level transition with a square root B dependence and a line width consistent with a Dirac fermion with a mobility >250,000 cm(2) x V(-1) x s(-1) at 4.2 K in a C-face RF sample having a Hall-effect carrier mobility of 425 cm(2) x V(-1) x s(-1) at 300 K. AFM shows that graphene grows continuously over the varying morphology of both Si and C-face substrates.

Enhanced open-circuit voltage of PbS nanocrystal quantum dot solar cells.

Nanocrystal quantum dots (QD) show great promise toward improving solar cell efficiencies through the use of quantum confinement to tune absorbance across the solar spectrum and enable multi-exciton generation. Despite this remarkable potential for high photocurrent generation, the achievable open-circuit voltage (Voc) is fundamentally limited due to non-radiative recombination processes in QD solar cells. Here we report the highest open-circuit voltages to date for colloidal QD based solar cells under one sun illumination. This Voc of 692 ± 7 mV for 1.4 eV PbS QDs is a result of improved passivation of the defective QD surface, demonstrating as a function of the QD bandgap (Eg). Comparing experimental Voc variation with the theoretical upper-limit obtained from one diode modeling of the cells with different Eg, these results clearly demonstrate that there is a tremendous opportunity for improvement of Voc to values greater than 1 V by using smaller QDs in QD solar cells.

Atomic-scale photonic hybrids for mid-infrared and terahertz nanophotonics

The field of nanophotonics focuses on the ability to confine light to nanoscale dimensions, typically much smaller than the wavelength of light. The goal is to develop light-based technologies that are impossible with traditional optics. Subdiffractional confinement can be achieved using either surface plasmon polaritons (SPPs) or surface phonon polaritons (SPhPs). SPPs can provide a gate-tunable, broad-bandwidth response, but suffer from high optical losses; whereas SPhPs offer a relatively low-loss, crystal-dependent optical response, but only over a narrow spectral range, with limited opportunities for active tunability. Here, motivated by the recent results from monolayer graphene and multilayer hexagonal boron nitride heterostructures, we discuss the potential of electromagnetic hybrids--materials incorporating mixtures of SPPs and SPhPs--for overcoming the limitations of the individual polaritons. Furthermore, we also propose a new type of atomic-scale hybrid--the crystalline hybrid--where mixtures of two or more atomic-scale (∼3 nm or less) polar dielectric materials lead to the creation of a new material resulting from hybridized optic phonon behaviour of the constituents, potentially allowing direct control over the dielectric function. These atomic-scale hybrids expand the toolkit of materials for mid-infrared to terahertz nanophotonics and could enable the creation of novel actively tunable, yet low-loss optics at the nanoscale.

Structural and optical properties of thick freestanding GaN templates

Structural and optical properties of thick (larger than 160 μm) freestanding hydride vapor phase epitaxy GaN templates have been investigated. AFM measurements showed that flat and smooth surface could be fabricated. High-resolution X-ray diffraction studies carried out with different spectrometer slit for the symmetric and asymmetric diffractions show that the linewidth increases with increasing slits width, indicating that a considerable degree of tilting and twisting of the individual grains are still present in these thick samples. Raman scattering measurements performed in a few samples indicate good crystalline quality and reduced strain. Very sharp and intense exciton related lines (FWHM less than 1 meV) have been observed in the low temperature photoluminescence spectra. Variable-temperature photoluminescence experiments were performed on both the growth surface and interface to identify the nature of the recombination processes observed in the luminescence spectra. FTIR absorption measurements show the presence of at least two donors with binding energy of 30.5 and 33.6 meV.

Role of epsilon-near-zero substrates in the optical response of plasmonic antennas

Radiation patterns and the resonance wavelength of a plasmonic antenna are significantly influenced by its local environment, particularly its substrate. Here, we experimentally explore the role of dispersive substrates, such as aluminum- or gallium-doped zinc oxide in the near infrared and 4H-silicon carbide in the mid-infrared, upon Au plasmonic antennas, extending from dielectric to metal-like regimes, crossing through epsilon-near-zero (ENZ) conditions. We demonstrate that the vanishing index of refraction within this transition induces a “slowing down” of the rate of spectral shift for the antenna resonance frequency, resulting in an eventual “pinning” of the resonance near the ENZ frequency. This condition corresponds to a strong backward emission with near-constant phase. By comparing heavily doped semiconductors and undoped, polar dielectric substrates with ENZ conditions in the near- and mid-infrared, respectively, we also demonstrate the generality of the phenomenon using both surface plasmon and phonon polaritons, respectively. Furthermore, we also show that the redirected antenna radiation induces a Fano-like interference and an apparent stimulation of optic phonons within SiC.