Joseph Shmulovich

Concentration-dependent /sup 4/I/sub 13/2/ lifetimes in Er/sup 3+/-doped fibers and Er/sup 3+/-doped planar waveguides

We report on the concentration- and pump-dependent lifetimes of the spontaneous emission in Er/sup 3+/-doped fibers and Er/sup 3+/-doped waveguides. In addition, we measure the concentration dependence of the 550-nm fluorescence due to excited state absorption (ESA).<<ETX>>

8-mV threshold Er/sup 3+/-doped planar waveguide amplifier

We report on the gain characteristics of a low threshold (8 mW) Er/sup 3+/-doped planar optical waveguide amplifier. Net fiber to fiber gain of 4.5 dB is achieved at a signal wavelength of 1536 nm with 80 mW of 980-nm pump power. This device represents significant progress toward a planar amplifier module pumped by a single laser diode.

Systems evaluation of an Er/sup 3+/-doped planar waveguide amplifier

We report the output saturation power, excess noise factor, and system performance of a highly concentrated Er/sup 3+/-doped planar optical waveguide amplifier. The performance data demonstrate the potential usefulness of planar optical waveguide amplifiers in system applications.<<ETX>>

Uncooled laser packaging based on silicon optical bench technology

Local access fiber optic systems and distributed gain fiber amplifier systems require low-cost and highly stable laser diode packages with high coupling efficiencies. These systems may use uncooled packaged lasers from the central office to the subscriber units in discrete or integrated transceiver packages. Low cost and high volume manufacturing technologies must be developed in order to produce these laser packages. A simple alternative to existing technologies is described in this paper. AT&T Bell Laboratories has been developing silicon optical bench (SiOB) technology for use as an integrated packaging platform for lasers, photodetectors and passive optical components. In this paper we describe an integrated optical sub-assembly for use in high volume and low cost laser packaging. The assembly integrates bond sites for a laser, a backface monitor photodetector and a metallized lensed fiber onto a single silicon optical sub-assembly. The approach allows for low cost batch processing, assembly and testing of components using the silicon wafer as a carrier and the use of automated pick and place machines for assembly.

Gain flatness of a planar optical waveguide amplifier

We report on the broad gain and gain flatness spectra (1530-1565 nm) of a 14 cm long Er/sup 3+/ doped aluminosilicate waveguide amplifier pumped at 1470 nm. We demonstrate its successful use as an in-line amplifier in an 8 channels WDM 155 Mbit/s transmission fiber experiment.

Integrated planar waveguide amplifier with 15 dB net gain at 1550 nm

A packaged Er-doped aluminosilicate planar optical waveguide amplifier (POWA) has shown net gain of 15 dB (22 dB) at 1550 nm (1532 nm) with 150 mW/980 nm pump. Low loss (0.25 dB) mode converters that couple between the POWA and standard P-glass waveguides are also demonstrated.

Inplane's technology platform for subsystems on a chip

Planar waveguide technology has long been touted as the major platform for optical integration, which could dramatically lower component/module size and cost in optical networks. This technology has finally come to maturity with such waveguide-based optical products as wavelength multiplexers, switches, splitters and couplers, which are common nowadays. However, its potential as a complete solution for integration of a subsystem on a chip has so far been limited by the lack of integrated active elements providing gain to deteriorating optical signals. As the signal propagates through the fiber-optic network, it dissipates its energy and requires amplification in the network subsystems to maintain a required signal to noise ratio. Discrete fiber amplifiers are designed into systems and maintain required signal levels. However, if new components are introduced or the current ones are changed, current amplifiers have a limited ability to compensate for changes. Inplanes solution to the signal degradation problem is an optical amplifier that can be integrated onto the same planar waveguide platform as the other passive elements of the subsystem. Subsystems on such a platform will be able to automatically and internally adjust signal optical power, and enable simple interfacing between optical modules, module replacement and upgrades in the network. Inplane Photonics has developed Er-doped waveguide amplifier (EDWA) technology, which is fully compatible with the glass-on-silicon waveguide platform. In this paper we will present recent EDWA performance that approaches that of a fiber amplifier. Furthermore, we will demonstrate several examples of practical integration between passive and active building blocks on a single optical chip.

Erbium-doped planar waveguide amplifiers integrated with silica waveguide technology

Summary form only given. We addressed the main challenges of integration of high refractive index Er-doped aluminosilicate waveguides with silicon optical bench technology. Performance of waveguide amplifiers integrated with pump/signal WDM will be presented, and issues related to their integration will be discussed.

Planar Er waveguide amplifier with 8-mW threshold

Summary form only given. In previous papers, we reported on waveguide amplifiers fabricated from Er/sup 3/+)-doped sodalime glass films on oxidized silicon wafers. In this work we report on waveguide amplifiers with a lower Er concentration and fabricated via an improved processing technique, which allows the lowest threshold of any waveguide amplifier reported to date.

Yb3+,Er3+-Codoped Silica-Based Glasses for Planar Optical Waveguide Amplifiers

The spectroscopic properties of Er3+-doped and Yb3+,Er3+-codoped sodium- and alumino-silicate glasses, potential planar optical waveguide amplifier materials for 1.55 µm, are investigated. With the exception of 4I13/2, multiphonon relaxation is dominant for all Er3+ excited-state multiplets, allowing efficient population of the emitting 4I13/2 state by 4I11/2 excitation around 980 nm. In both glasses, multiphonon relaxation from 4I13/2 is negligible up to 678 K, and the respective 300 K absolute quantum yields are ~0.9 for 0.05 mol% Er3+-doped samples under low-power 4I11/2 excitation. OH- impurities are able to efficiently quench 4I13/2 excitation. Absolute 4I13/2 (Er3+) and 2F5/2 (Yb3+) quantum yields are used to predict an optimum Yb3+,Er3+ concentration range for sensitization. Yb3+ codotation strongly enhances pump-light absorption and increases 4I13/2 population by almost two orders of magnitude in some samples. Relative 2H11/2 /4S3/2 upconversion luminescence intensities are shown to be a sensitive measure for the substantial internal sample heating observed in Yb3+ codoped glasses.