Jozeph Park

Magnetoelectric effects of nanoparticulate Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films

The authors fabricated Pb(Zr0.52Ti0.48)O3–NiFe2O4 composite films consisting of randomly dispersed NiFe2O4 nanoparticles in the Pb(Zr0.52Ti0.48)O3 matrix. The structural analysis revealed that the crystal axes of the NiFe2O4 nanoparticles are aligned with those of the ferroelectric matrix. The composite has good ferroelectric and magnetic properties. The authors measured the transverse and longitudinal components of the magnetoelectric voltage coefficient, which supports the postulate that the magnetoelectric effect comes from direct stress coupling between magnetostrictive NiFe2O4 and piezoelectric Pb(Zr0.52Ti0.48)O3 grains.

Establishment and characterisation of six human biliary tract cancer cell lines.

Human cell lines established from biliary tract cancers are rare, and only five have been reported previously. We report the characterisation of six new six biliary tract cancer cell lines (designated SNU-245, SNU-308, SNU-478, SNU-869, SNU-1079 and SNU-1196) established from primary tumour samples of Korean patients. The cell lines were isolated from two extrahepatic bile duct cancers (one adenocarcinoma of common bile duct, one hilar bile duct cancer), two adenocarcinomas of ampulla of Vater, one intrahepatic bile duct cancer (cholangiocarcinoma), and one adenocarcinoma of the gall bladder. The cell phenotypes, including the histopathology of the primary tumours and in vitro growth characteristics, were determined. We also performed molecular characterisation, including DNA fingerprinting analysis and abnormalities of K-ras, p15, p16, p53, hMLH1, hMSH2, DPC4, β-catenin, E-cadherin, hOGG1, STK11, and TGF-βRII genes by PCR–SSCP and sequencing analysis. In addition, we compared the genetic alterations in tumour cell lines and their corresponding tumour tissues. All lines grew as adherent cells. Population doubling times varied from 48–72 h. The culture success rate was 20% (six out of 30 attempts). All cell lines showed (i) relatively high viability; (ii) absence of mycoplasma or bacteria contamination; and (iii) genetic heterogeneity by DNA fingerprinting analysis. Among the lines, three lines had p53 mutations; and homozygous deletions in both p16 and p15 genes were found three and three lines, respectively; one line had a heterozygous missense mutation in hMLH1; E-cadherin gene was hypermethylated in two lines. Since the establishment of biliary tract cancer cell lines has been rarely reported in the literature, these newly established and well characterised biliary tract cancer cell lines would be very useful for studying the biology of biliary tract cancers, particularly those related to hypermethylation of E-cadherin gene in biliary tract cancer.

Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector

Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to the formation of Se vacancies generated at the decomposition temperature (650 °C) after the CVD growth for 10 min. Our MoSe2 TFT with a reasonably high field-effect mobility (10 cm2/V · s) exhibits a high photoresponsivity (93.7 A/W) and a fast photoresponse time (τrise ~ 0.4 s) under the illumination of light, which demonstrates the practical feasibility of multilayer MoSe2 TFTs for photodetector applications.

Multiferroic properties of epitaxially stabilized hexagonal DyMnO3 thin films

The authors fabricated epitaxial thin films of hexagonal DyMnO3, which otherwise form in a bulk perovskite structure, via deposition on Pt(111)‖Al2O3(0001) and YSZ(111) substrates, each of which has in-plane hexagonal symmetry. The polarization hysteresis loop demonstrated the existence of ferroelectricity in our hexagonal DyMnO3 films at least below 70K. The observed 2.2μC∕cm2 remnant polarization at 25K corresponded to a polarization enhancement by a factor of 10 compared to that of the bulk orthorhombic DyMnO3. Interestingly, this system showed an antiferroelectriclike feature in its hysteresis loop. Our hexagonal DyMnO3 films showed an antiferromagnetic Neel temperature around 60K and a spin reorientation transition around 40K. The authors also found spin-glass-like behavior, which was likely to arise from the geometric frustration of antiferromagnetically coupled Mn spins with an edge-sharing triangular lattice.

Experimental studies of strong dipolar interparticle interaction in monodisperse Fe3O4 nanoparticles

Interparticle interaction of monodisperse Fe3O4 nanoparticles has been experimentally investigated by dispersing the nanoparticles in solvents. With increasing the interparticle distances to larger than 100nm in a controlled manner, the authors found that the blocking temperature (TB) of the nanoparticles drops continuously and eventually gets saturated with a total drop in TB of 7–17K observed for 3, 5, and 7nm samples, compared with their respective nanopowder samples. By carefully studying the dependence of TB on the interparticle distance, the authors could demonstrate that the experimental dependence of TB follows the theoretical curve of the dipole-dipole interaction.

High‐Mobility Transistors Based on Large‐Area and Highly Crystalline CVD‐Grown MoSe2 Films on Insulating Substrates

Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-1) and excellent mechanical stability. These results suggest that high mobility materials will be indispensable for various future applications such as high-resolution displays and human-centric soft electronics.

A review on the recent developments of solution processes for oxide thin film transistors

This review article introduces the recent advances in the development of oxide semiconductor materials based on solution processes and their potential applications. In the early stage, thin film transistors based on oxide semiconductors fabricated by solution processes used to face critical problems such as high annealing temperatures (>400 °C) required to obtain reasonable film quality, and the relatively low field effect mobility (<5 cm2 V−1 s−1) compared to devices fabricated by conventional vacuum-based techniques. In order to overcome such hurdles, the proper selection of high mobility amorphous oxide semiconductor materials is addressed first. The latter involves the combination of high mobility compounds and multilayered active stacks. Ensuing overviews are provided on the selection of optimum precursors and alternative annealing methods that enable the growth of high quality films at relatively low process temperatures (<200 °C). Reasonably high field effect mobility values (~10 cm2 V−1 s−1) could thus be obtained by optimizing the above process parameters. Finally, potential applications of solution processed oxide semiconductor devices are summarized, involving, for instance, flexible displays, biosensors, and non-volatile memory devices. As such, further innovations in the solution process methods of oxide semiconductor devices are anticipated to allow the realization of cost effective, large area electronics in the near future.

Superparamagnetism in Co-ion-implanted anatase TiO2 thin films and effects of postannealing

We observed superparamagnetism in Co-ion-implanted anatase TiO2 thin films on SrTiO3 (001) substrates. After postannealing under oxygen pressure of 1.0×10−6 Torr, the blocking temperature increased with increasing annealing temperature. Eventually, the 600 °C-annealed sample became ferromagnetic at room temperature. These phenomena can be explained by the formation of Co (or ferromagnetic Co compound) particles and their growth during postannealing, as directly observed with transmission electron microscopy. High oxygen pressure during annealing reduced the size of the clusters and saturation magnetization moment, which indicates that cobalt clustering should be the main cause of the room-temperature ferromagnetism in the Co-ion-implanted films.

Combination chemotherapy with epirubicin, docetaxel and cisplatin (EDP) in metastatic or recurrent, unresectable gastric cancer

Based on single agent activities and the additive or synergistic effects of three individual drugs in gastric cancer, we performed a phase II study of a new regimen combining epirubicin, docetaxel and cisplatin (EDP) for unresectable gastric cancer. The patients with histologically confirmed metastatic or recurrent, unresectable gastric cancer and no history of palliative chemotherapy were eligible for this trial. In total, 40 mg m−2 epirubicin (reduced to 30 mg m−2 due to high incidence of febrile neutropaenia; 75%) intravenously (i.v.) over 30 min, followed by 60 mg m−2 docetaxel i.v. over 1 h, then 75 mg m−2 cisplatin i.v. over 1 h was administered every 3 weeks. Between January 2002 and February 2003, 30 patients (epirubicin 40 mg m−2, eight; 30 mg m−2, 22) were enrolled. The median age was 52 years (range, 33–68). The patients received a median of four cycles (range, 1–8). One patient (3%) achieved a complete response, 13 (43%) showed partial responses, 13 (43%) had stable diseases and three (10%) progressed. The overall response rate was 47% (95% CI, 28–66%), and the median duration of response was 5.0 months (95% CI, 3.0–7.0). The median time to progression was 4.1 months (95% CI, 2.4–5.9), and the median overall survival was 11.0 months (95% CI, 9.5–12.4). Grade 4 neutropaenia were observed in 41%, and febrile neutropaenia in 32%, out of the patients receiving 30 mg m−2 of epirubicin. Grade 3 nonhaematological toxicities included nausea, vomiting, anorexia and peripheral neuropathy. In conclusion, EDP is active in gastric cancer, with a manageable and predictable toxicity profile.

Study on the photoresponse of amorphous In-Ga-Zn-O and zinc oxynitride semiconductor devices by the extraction of sub-gap-state distribution and device simulation.

Persistent photoconduction (PPC) is a phenomenon that limits the application of oxide semiconductor thin-film transistors (TFTs) in optical sensor-embedded displays. In the present work, a study on zinc oxynitride (ZnON) semiconductor TFTs based on the combination of experimental results and device simulation is presented. Devices incorporating ZnON semiconductors exhibit negligible PPC effects compared with amorphous In-Ga-Zn-O (a-IGZO) TFTs, and the difference between the two types of materials are examined by monochromatic photonic C-V spectroscopy (MPCVS). The latter method allows the estimation of the density of subgap states in the semiconductor, which may account for the different behavior of ZnON and IGZO materials with respect to illumination and the associated PPC. In the case of a-IGZO TFTs, the oxygen flow rate during the sputter deposition of a-IGZO is found to influence the amount of PPC. Small oxygen flow rates result in pronounced PPC, and large densities of valence band tail (VBT) states are observed in the corresponding devices. This implies a dependence of PPC on the amount of oxygen vacancies (VO). On the other hand, ZnON has a smaller bandgap than a-IGZO and contains a smaller density of VBT states over the entire range of its bandgap energy. Here, the concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor. The analytical methodology presented in this report accounts well for the reduction of PPC in ZnON TFTs, and provides a quantitative tool for the systematic development of phototransistors for optical sensor-embedded interactive displays.