Ju Zhenhe

Structural and Electrical Properties of High C-Orientation Gan Films on Diamond Substrates with ECR-PEMOCVD

Preferred orientation GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N2 are applied as precursors and different N2 flux is used to achieve high quality GaN films. The influence of N2 flux on the properties of GaN films is systematically investigated by x-ray diffraction analysis (XRD), atomic force microscopy (AFM), electron probe microanalysis (EPMA) and Hall Effect Measurement (HL). The results show that the high quality GaN films deposited at the proper N2 flux display a fine structural and electrical property and the Ga/N atomic ratio plays an important role in the electrical property of GaN films.

Low‐Temperature Grown INN Films Based on Sapphire Substrate with ECR‐Plasma Enhanced MOCVD

Prefer-oriented and fine grained polycrystalline InN films are deposited on sapphire substrate using electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system at low-temperature. Trimethyl indium (TMIn) and N2 are applied as precursors for In and N, respectively. The influence of deposition temperature on the structural, electrical and morphological properties of InN films is systematically investigated by x-ray diffraction analysis (XRD), Hall Effect measurement (HL5500) and atomic force microscopy (AFM). The results show that the as-grown InN films with smooth surface roughness of 4.59nm and preferred orientation are successfully achieved at the optimized deposition temperature of 450°C, which was low temperature here. The InN films reported here will provide various opportunities for the development of high efficiency and high performance semiconductor devices based on InN materials.

Effect of Growth Temperature on GaN Films Deposited on Stainless Steel Substrates by Ecr‐Pemocvd

Gallium nitride (GaN) films were deposited on stainless steel substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD), with trimethyl gallium (TMGa) and N2 applied as the precursors of Ga and N, respectively. The effect of growth temperature on the characteristics of GaN films is systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), room temperature photoluminescence (PL), and scanning electron microscope (SEM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on stainless substrates under optimized deposition temperature of 400°C. In addition, the approximate Ohmic contact behavior between GaN film and stainless steel substrate was clearly demonstrated by the current-voltage (I–V) dependence.