Juan Gabriel Ramirez

Multiple avalanches across the metal-insulator transition of vanadium oxide nanoscaled junctions.

The metal-insulator transition of nanoscaled VO2 devices is drastically different from the smooth transport curves generally reported. The temperature driven transition occurs through a series of resistance jumps ranging over 2 decades in magnitude, indicating that the transition is caused by avalanches. We find a power law distribution of the jump sizes, demonstrating an inherent property of the VO2 films. We report a surprising relation between jump magnitude and device size. A percolation model captures the general transport behavior, but cannot account for the statistical behavior.

First-order reversal curve measurements of the metal-insulator transition in VO 2 : Signatures of persistent metallic domains

We have performed first order reversal curve measurements of the temperature-driven metalinsulator transition in VO2 thin films, which enable quantitative analysis of the hysteresis behavior. An unexpected tail-like feature in the contour plot of the reversal curve distribution indicates the existence of metallic domains, even at temperatures below the closing of the hysteresis. These domains interact with the surrounding medium and change the reversal path relative to a path from a fully insulating state. With this in mind, and assuming that such interaction persist through the entire phase transition, we develop a model where the driving force (or energy barrier) in charge of opening a hysteresis in VO2 are inter-domain interactions. This model is intrinsically different from the Preisach model usually used to describe hysteresis; given that it looks for the microscopic origin of the hysteresis, and provides physical parameters to characterize it.

Control of magnetism across metal to insulator transitions

Magnetic properties (coercivity and magnetization) of ferromagnetic films are strongly affected by the proximity to materials that undergo a metal to insulator transition. Here, we show that stress associated with structural changes across the metal-insulator phase transition in VO2 and V2O3 produces a magnetoelastic anisotropy in ferromagnetic films (Co and Ni) deposited on top of the oxides. The changes in coercivity are as large as 168% and occur in a very narrow temperature range. This effect can be controlled and inverted by the thickness and the deposition temperature of the ferromagnetic films, which is very flexible for important technological applications.

Coercivity enhancement in V2O3/Ni bilayers driven by nanoscale phase coexistence

We studied the temperature dependence of coercivity and magnetization of V2O3/Ni bilayers across the Structural Phase Transition in V2O3. We found a coercivity peak that coincides with the V2O3 phase transition on top of an overall increase of the coercivity with decreasing temperature. We propose that this sharp increase arises from a length scale competition between magnetic domains of Ni and phase coexistence during the V2O3 phase transition. This model is supported by micromagnetic simulations and shows that magnetic properties of ferromagnetic films are strongly affected by a proximal first order phase transition.

Ultra-thin filaments revealed by the dielectric response across the metal-insulator transition in VO2

Temperature dependent dielectric spectroscopy measurements on vanadium dioxide thin films allow us to distinguish between the resistive, capacitive, and inductive contributions to the impedance across the metal-insulator transition (MIT). We developed a single, universal, equivalent circuit model to describe the dielectric behavior above and below the MIT. Our model takes account of phase-coexistence of metallic and insulating regions. We find evidence for the existence at low temperature of ultra-thin threads as described by a resistor-inductor element. A conventional resistor-capacitor element connected in parallel accounts for the insulating phase and the dielectric relaxation.

Electrical breakdown in a V2O3 device at the insulator-to-metal transition

We have measured the electrical properties of a V2O3 thin film micro bridge at the insulator-metal transition (IMT). Discontinuous jumps to lower voltages in the current voltage characteristic (IV) followed by an approximately constant voltage progression for high currents indicate an electrical breakdown of the device. In addition, the IV curve shows hysteresis and a training effect, i.e., the subsequent IV loops are different from the first IV loop after thermal cycling. Low-temperature scanning electron microscopy (LTSEM) reveals that the electrical breakdown over the whole device is caused by the formation of electro-thermal domains (ETDs), i.e., the current and temperature redistribution in the device. On the contrary, at the nanoscale, the electrical breakdown causes the IMT of individual domains. In a numerical model we considered these domains as a network of resistors and we were able to reproduce the electro-thermal breakdown as well as the hysteresis and the training effect in the IVs.

Dynamic conductivity scaling in photoexcited V 2 O 3 thin films

Optical-pump terahertz-probe spectroscopy is used to investigate ultrafast far-infrared conductivity dynamics during the insulator-to-metal transition (IMT) in vanadium sesquioxide (V2O3). The resultant conductivity increase occurs on a tens of ps timescale, exhibiting a strong dependence on the initial temperature and fluence. We have identified a scaling of the conductivity dynamics upon renormalizing the time axis with a simple power law (alpha = 1/2) that depends solely on the initial, final, and conductivity onset temperatures. Qualitative and quantitative considerations indicate that the dynamics arise from nucleation and growth of the metallic phase which can be described by the Avrami model. We show that the temporal scaling arises from spatial scaling of the growth of the metallic volume fraction, highlighting the self-similar nature of the dynamics. Our results illustrate the important role played by mesoscopic effects in phase transition dynamics.

Magnetic field modulated microwave spectroscopy across phase transitions and the search for new superconductors

This article introduces magnetic field modulated microwave spectroscopy (MFMMS) as a unique and high-sensitivity technique for use in the search for new superconductors. MFMMS measures reflected microwave power as a function of temperature. The modulation induced by the external ac magnetic field enables the use of phase locked detection with the consequent sensitivity enhancement. The MFMMS signal across several prototypical structural, magnetic, and electronic transitions is investigated. A literature review on microwave absorption across superconducting transitions is included. We show that MFMMS can be used to detect superconducting transitions selectively with very high sensitivity.

Low vibration high numerical aperture automated variable temperature Raman microscope

Raman micro-spectroscopy is well suited for studying a variety of properties and has been applied to a wide range of areas. Combined with tuneable temperature, Raman spectra can offer even more insights into the properties of materials. However, previous designs of variable temperature Raman microscopes have made it extremely challenging to measure samples with low signal levels due to thermal and positional instabilities as well as low collection efficiencies. Thus contemporary Raman microscope has found limited applicability to probing the subtle physics involved in phase transitions and hysteresis. This paper describes a new design of a closed-cycle, Raman microscope with full polarization rotation. High collection efficiency, thermal stability, and mechanical stability are ensured by both deliberate optical, cryogenic, and mechanical design. Measurements on two samples, Bi2Se3 and V2O3, which are challenging due to low thermal conductivities, low signal levels, and/or hysteretic effects, are measured with previously undemonstrated temperature resolution.

Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films

Ultrafast optical pump--optical probe and optical pump--terahertz probe spectroscopy were performed on vanadium dioxide (