Juan M. Rivas

Opportunities and Challenges in Very High Frequency Power Conversion

THIS paper explores opportunities and challenges in power conversion in the VHF frequency range of 30-300 MHz. The scaling of magnetic component size with frequency is investigated, and it is shown that substantial miniaturization is possible with increased frequencies even considering material and heat transfer limitations. Likewise, dramatic frequency increases are possible with existing and emerging semiconductor devices, but necessitate circuit designs that either compensate for or utilize device parasitics. We outline the characteristics of topologies and control methods that can meet the requirements of VHF power conversion, and present supporting examples from power converters operating at frequencies of up to 110 MHz.

Resistance Compression Networks for Radio-Frequency Power Conversion

A limitation of many high-frequency resonant inverter topologies is their high sensitivity to loading conditions. This paper introduces a new class of matching networks that greatly reduces the load sensitivity of resonant inverters and radio frequency (RF) power amplifiers. These networks, which we term resistance compression networks, serve to substantially decrease the variation in effective resistance seen by a tuned RF inverter as loading conditions change. We explore the operation, performance characteristics, and design of these networks, and present experimental results demonstrating their performance. Their combination with rectifiers to form RF-to-dc converters having narrow-range resistive input characteristics is also treated. The application of resistance compression in resonant power conversion is demonstrated in a dc-dc power converter operating at 100MHz

A High-Frequency Resonant Inverter Topology With Low-Voltage Stress

This paper presents a new switched-mode resonant inverter, which we term the inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype inverter is described that switches at 30 MHz and provides over 500 W of radio frequency power at a drain efficiency above 92%. It is expected that the inverter will find use as a building block in high-performance dc-dc converters among other applications.

New Architectures for Radio-Frequency DC–DC Power Conversion

This document proposes two new architectures for switched-mode dc–dc power conversion. The proposed architectures enable dramatic increases in switching frequency to be realized while preserving features critical in practice, including regulation of the output across a wide load range and high light-load efficiency. This is achieved in part by how the energy conversion and regulation functions are partitioned. The structure and control approach of the new architectures are described, along with representative implementation methods. The design and experimental evaluation of prototype systems with cells operating at 100MHz are also described. It is anticipated that the proposed approaches and ones like them will allow substantial improvements in the size of switching power converters and, in some cases, will permit their integrated fabrication.

Design Considerations for Very High Frequency dc-dc Converters

This document describes several aspects relating to the design of dc-dc converters operating at frequencies in the VHF range (30–300 MHz). Design considerations are treated in the context of a dc-dc converter operating at a switching frequency of 100 MHz. Gate drive, rectifier and control designs are explored in detail, and experimental measurements of the complete converter are presented that verify the design approach. The gate drive, a self-oscillating multi-resonant circuit, dramatically reduces the gating power while ensuring fast on-off transitions of the semiconductor switch. The rectifier is a resonant topology that absorbs diode parasitic capacitance and is designed to appear resistive at the switching frequency. The small sizes of the energy storage elements (inductors and capacitors) in this circuit permit rapid start-up and shut-down and a correspondingly high control bandwidth. These characteristics are exploited in a high bandwidth hysteretic control scheme that modulates the converter on and off at frequencies as high as 200 kHz.

Very High Frequency Resonant Boost Converters

This paper presents a resonant boost topology suitable for very-high-frequency (VHF, 30-300 MHz) DC-DC power conversion. The proposed design features low device voltage stress, high efficiency over a wide load range, and excellent transient performance. Two experimental prototypes have been built and evaluated. One is a 110-MHz, 23-W converter that uses a high-performance RF lateral DMOSFET. The converter achieves higher than 87% efficiency at nominal input and output voltages, and maintains good efficiency down to 5% of full load. The second implementation, aimed toward integration, is a 50-MHz, 17-W converter that uses a transistor from a 50-V integrated power process. In addition, two resonant gate drive schemes suitable for VHF operation are presented, both of which provide rapid startup and low-loss operation. Both converters regulate the output using high-bandwidth, on-off hysteretic control, which enables fast transient response and efficient light-load operation. The low energy storage requirements of the converters allow the use of aircore inductors in both designs, thereby eliminating magnetic core loss and introducing the possibility of easy integration.

A very high frequency dc-dc converter based on a class Φ 2 resonant inverter

This paper introduces a new dc-dc converter suitable for operation at very high frequencies under on-off control. The converter power stage is based on a resonant inverter (the Phi2 inverter) providing low switch voltage stress and fast settling time. A new multi-stage resonant gate driver suited for driving large, high-voltage rf MOSFETS at VHF frequencies is also introduced. Experimental results are presented from a prototype dc-dc converter operating at 30 MHz at input voltages up to 200 V and power levels above 200 W. These results demonstrate the high performance achievable with the proposed design.

New architectures for radio-frequency DC/DC power conversion

This document proposes new architectures for switched-mode DC/DC power conversion. The proposed architectures enable dramatic increases in switching frequency to be realized while preserving features critical in practice, including regulation of the output across a wide load range and high light-load efficiency. This is achieved in part by how the energy conversion and regulation functions are partitioned. The structure and control approach of the new architectures are described, along with representative implementation methods. The design and experimental evaluation of prototype systems with cells operating at 100 MHz are also described. It is anticipated that the proposed approaches will allow substantial improvements in the size of switching power converters to be achieved and, in some cases, to permit their integrated fabrication.

A High-Frequency Resonant Inverter Topology with Low Voltage Stress

This document presents a new switched-mode resonant inverter, which we term the Phi2 inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype Phi2 inverter is described that switches at 30 MHz and provides over 500 W of rf power at a drain efficiency above 92%. It is expected that the Phi2 inverter will find use as a building block in high performance dc-dc converters among other applications [1], [2].

High frequency resonant SEPIC converter with wide input and output voltage ranges

This document presents a resonant SEPIC converter and control method suitable for high frequency (HF) and very high frequency (VHF) dc-dc power conversion. The proposed design features high efficiency over a wide input and output voltage range, up-and-down voltage conversion, small size, and excellent transient performance. In addition, a resonant gate drive scheme is presented which provides rapid startup and low-loss at HF and VHF frequencies. The converter regulates the output using an on-off control scheme modulating at a fixed frequency. This control method enables fast transient response and efficient light load operation while providing controlled spectral characteristics of the input and output waveforms. An experimental prototype has been built and evaluated. The prototype converter, built with two commercial vertical MOSFETs, operates at a fixed switching frequency of 20 MHz, with an input voltage range of 3.6 V to 7.2 V, an output voltage range of 3 V to 9 V and an output power rating of up to 3 W. The converter achieves higher than 80% efficiency across the entire input voltage range at nominal output voltage, and maintains good efficiency across the whole operating range.