Juergen Dipl Ing Dr Graul

Process for suppressing parasitic components utilizing ion implantation prior to epitaxial deposition

Process for producing an inversely operated transistor

Process for the production of a semiconductor component with at least two zones which form a pn-junction and possess differing conductivity types

Process for producing semiconductor devices

Inverse planar transistor

HALBLEITERBAUELEMENT MIT WENIGSTENS ZWEI, EINEN PN-UEBERGANG BILDENDEN ZONEN UNTERSCHIEDLICHEN LEITUNGSTYPS SOWIE VERFAHREN ZU DESSEN HERSTELLUNG

Halbleiterbauelement mit wenigstens zwei, einen pn-uebergang bildenden zonen unterschiedlichen leitungstyps sowie verfahren zu dessen herstellung Semiconductor device having at least two, a pn-over passage forming zones of different conduction types and process for its manufacture

A semiconductor device comprising at least two, a pn junction forming zones of different conduction types, and process for its preparation

A method for producing a inversely operated transistor

Verfahren zur herstellung eines invers betriebenen transistors A process for producing an inversely operated transistor