Jukka Vayrynen

Helical edge resistance introduced by charge puddles.

We study the influence of electron puddles created by doping of a 2D topological insulator on its helical edge conductance. A single puddle is modeled by a quantum dot tunnel coupled to the helical edge. It may lead to significant inelastic backscattering within the edge because of the long electron dwelling time in the dot. We find the resulting correction to the perfect edge conductance. Generalizing to multiple puddles, we assess the dependence of the helical edge resistance on the temperature and doping level and compare it with recent experimental data.

Resistance of helical edges formed in a semiconductor heterostructure

Time-reversal symmetry prohibits elastic backscattering of electrons propagating within a helical edge of a two-dimensional topological insulator. However, small band gaps in these systems make them sensitive to doping disorder, which may lead to the formation of electron and hole puddles. Such a puddle -- a quantum dot -- tunnel-coupled to the edge may significantly enhance the inelastic backscattering rate, due to the long dwelling time of an electron in the dot. The added resistance is especially strong for dots carrying an odd number of electrons, due to the Kondo effect. For the same reason, the temperature dependence of the added resistance becomes rather weak. We present a detailed theory of the quantum dot effect on the helical edge resistance. It allows us to make specific predictions for possible future experiments with artificially prepared dots in topological insulators. It also provides a qualitative explanation of the resistance fluctuations observed in short HgTe quantum wells. In addition to the single-dot theory, we develop a statistical description of the helical edge resistivity introduced by random charge puddles in a long heterostructure carrying helical edge states. The presence of charge puddles in long samples may explain the observed coexistence of a high sample resistance with the propagation of electrons along the sample edges.

Electrical manipulation and measurement of spin properties of quantum spin Hall edge states.

We study the effects of a gate-controlled Rashba spin-orbit coupling to quantum spin Hall edge states in HgTe quantum wells. A uniform Rashba coupling can be employed in tuning the spin orientation of the edge states while preserving the time-reversal symmetry. We introduce a sample geometry where the Rashba coupling can be used in probing helicity by purely electrical means without requiring spin detection, application of magnetic materials or magnetic fields. In the considered setup a tilt of the spin orientation with respect to the normal of the sample leads to a reduction in the two-terminal conductance with current-voltage characteristics and temperature dependence typical of Luttinger liquid constrictions.

Magnetic moments in a helical edge can make weak correlations seem strong

We study the effect of localized magnetic moments on the conductance of a helical edge. Interaction with a local moment is an effective backscattering mechanism for the edge electrons. We evaluate the resulting differential conductance as a function of temperature

Chiral topological phases and fractional domain wall excitations in one-dimensional chains and wires.

T

Microwave signatures of Majorana states in a topological Josephson junction

and applied bias

Zeeman and spin-orbit effects in the Andreev spectra of nanowire junctions

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Soft topological objects in topological media

for any value of

Microwave spectroscopy of spinful Andreev bound states in ballistic semiconductor Josephson junctions

V/T

Erratum: Electrical Manipulation and Measurement of Spin Properties of Quantum Spin Hall Edge States [Phys. Rev. Lett.106, 076803 (2011)]

. Backscattering off magnetic moments, combined with the weak repulsion between the edge electrons results in a power-law temperature and voltage dependence of the conductance; the corresponding small positive exponent is indicative of insulating behavior. Local moments may naturally appear due to charge disorder in a narrow-gap semiconductor. Our results provide an alternative interpretation of the recent experiment by Li et al. \cite{Li15} where a power-law suppression of the conductance was attributed to strong electron repulsion within the edge, with the value of Luttinger liquid parameter