Julia D. Cushen

Polarity-Switching Top Coats Enable Orientation of Sub–10-nm Block Copolymer Domains

Thermally Transforming Thin Films Nanoscale features can be created by the phase separation that occurs in block copolymers that join together polymer segments with different wetting properties. For applications such as lithography, it is useful to generate small features and to orient them through simple processing steps. Top-layer coatings should be able to help drive alignment, but it is difficult to coat a layer that also has strong enough interactions to influence assembly. Bates et al. (p. 775) developed a water-soluble polymer that can top-coat lamellaforming block copolymers and that transforms during thermal annealing into a neutral wetting layer that helps drive the formation of vertically oriented lamellae. A chemical reaction in a thin polymer film imposes orientational ordering of lamellar domains in an underlying film. Block copolymers (BCPs) must necessarily have high interaction parameters (χ), a fundamental measure of block incompatibility, to self-assemble into sub–10-nanometer features. Unfortunately, a high χ often results from blocks that have disparate interfacial energies, which makes the formation of useful thin-film domain orientations challenging. To mitigate interfacial forces, polymers composed of maleic anhydride and two other components have been designed as top coats that can be spin-coated from basic aqueous solution in the ring-opened, acid salt form. When baked, the anhydride reforms and switches polarity to create a neutral layer enabling BCP feature alignment not possible by thermal annealing alone. Top coats were applied to the lamella-forming block copolymers poly(styrene-block-trimethylsilylstyrene-block-styrene) and poly(trimethylsilylstyrene-block-lactide), which were thermally annealed to produce perpendicular features with linewidths of 15 and 9 nanometers, respectively.

Bit-Patterned Magnetic Recording: Theory, Media Fabrication, and Recording Performance

Bit-patterned media (BPM) for magnetic recording provides a route to thermally stable data recording at >1 Tb/in2 and circumvents many of the challenges associated with extending conventional granular media technology. Instead of recording a bit on an ensemble of random grains, BPM comprises a well-ordered array of lithographically patterned isolated magnetic islands, each of which stores 1 bit. Fabrication of BPM is viewed as the greatest challenge for its commercialization. In this paper, we describe a BPM fabrication method that combines rotary-stage e-beam lithography, directed self-assembly of block copolymers, self-aligned double patterning, nanoimprint lithography, and ion milling to generate BPM based on CoCrPt alloy materials at densities up to 1.6 Td/in2. This combination of novel fabrication technologies achieves feature sizes of <;10 nm, which is significantly smaller than what conventional nanofabrication methods used in semiconductor manufacturing can achieve. In contrast to earlier work that used hexagonal arrays of round islands, our latest approach creates BPM with rectangular bit cells, which are advantageous for the integration of BPM with existing hard disk drive technology. The advantages of rectangular bits are analyzed from a theoretical and modeling point of view, and system integration requirements, such as provision of servo patterns, implementation of write synchronization, and providing for a stable head-disk interface, are addressed in the context of experimental results. Optimization of magnetic alloy materials for thermal stability, writeability, and tight switching field distribution is discussed, and a new method for growing BPM islands from a specially patterned underlayer-referred to as templated growth-is presented. New recording results at 1.6 Td/in2 (roughly equivalent to 1.3 Tb/in2) demonstrate a raw error rate <;10-2, which is consistent with the recording system requirements of modern hard drives. Extendibility of BPM to higher densities and its eventual combination with energy-assisted recording are explored.

Oligosaccharide/Silicon-Containing Block Copolymers with 5 nm Features for Lithographic Applications

Block copolymers demonstrate potential for use in next-generation lithography due to their ability to self-assemble into well-ordered periodic arrays on the 3-100 nm length scale. The successful lithographic application of block copolymers relies on three critical conditions being met: high Flory-Huggins interaction parameters (χ), which enable formation of <10 nm features, etch selectivity between blocks for facile pattern transfer, and thin film self-assembly control. The present paper describes the synthesis and self-assembly of block copolymers composed of naturally derived oligosaccharides coupled to a silicon-containing polystyrene derivative synthesized by activators regenerated by electron transfer atom transfer radical polymerization. The block copolymers have a large χ and a low degree of polymerization (N) enabling formation of 5 nm feature diameters, incorporate silicon in one block for oxygen reactive ion etch contrast, and exhibit bulk and thin film self-assembly of hexagonally packed cylinders facilitated by a combination of spin coating and solvent annealing techniques. As observed by small angle X-ray scattering and atomic force microscopy, these materials exhibit some of the smallest block copolymer features in the bulk and in thin films reported to date.

Double-Patterned Sidewall Directed Self-Assembly and Pattern Transfer of Sub-10 nm PTMSS-b-PMOST

The directed self-assembly (DSA) of two sub-20 nm pitch silicon-containing block copolymers (BCPs) was accomplished using a double-patterned sidewall scheme in which each lithographic prepatterned feature produced two regions for pattern registration. In doing so, the critical dimension of the lithographic prepatterns was relaxed by a factor of 2 compared to previously reported schemes for DSA. The key to enabling the double-patterned sidewall scheme is the exploitation of the oxidized sidewalls of cross-linked polystyrene formed during the pattern transfer of the resist via reactive ion etching. This results in shallow trenches with two guiding interfaces per prepatterned feature. Electron loss spectroscopy was used to study and confirm the guiding mechanism of the double-patterned sidewalls, and pattern transfer of the BCPs into a silicon substrate was achieved using reactive ion etching. The line edge roughness, width roughness, and placement error are near the target required for bit-patterned media applications, and the technique is also compatible with the needs of the semiconductor industry for high-volume manufacturing.