Julian Müller

Enhancing the Water Splitting Efficiency of Sn‐Doped Hematite Nanoflakes by Flame Annealing

The effect of flame annealing on the water-splitting properties of Sn decorated hematite (α-Fe2O3) nanoflakes has been investigated. It is shown that flame annealing can yield a considerable enhancement in the maximum photocurrent under AM 1.5 (100 mW cm(-2)) conditions compared to classic furnace annealing treatments. Optimizing the annealing time (10 s at 1000 °C) leads to a photocurrent of 1.1 mA cm(-2) at 1.23 V (vs. RHE) with a maximum value 1.6 mA cm(-2) at 1.6 V (vs. RHE) in 1 M KOH. The improvement in photocurrent can be attributed to the fast direct heating that maintains the nanoscale morphology, leads to optimized Sn decoration, and minimizes detrimental substrate effects.

Fluorescent SiC as a new material for white LEDs

Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.

A significant cathodic shift in the onset potential of photoelectrochemical water splitting for hematite nanostructures grown from Fe–Si alloys

Thermal oxidation of Fe to nanostructured hematite (wires, flakes) is currently widely investigated to produce efficient photoanodes for photoelectrochemical water splitting. The process carried out on pure iron, however, has the key drawback that not only hematite but a layered structure of Fe2O3–Fe3O4–FeO is formed where the thick suboxide layer underneath the Fe2O3 is highly detrimental to the photoresponse. In the present work, we show that suboxide formation can be largely suppressed if hematite nanowires/nanoflakes are thermally grown on Fe–Si alloys. For hematite structures grown on a Fe–Si alloy with 5 at% Si, a photocurrent onset potential as low as 0.6 VRHE can be reached (under AM 1.5 illumination and 1 M KOH). We believe that the results represent a key finding towards the formation of optimized hematite nanostructures using a thermal oxidation method.

Local temperature measurement in TEM by parallel beam electron diffraction

With the recent advances in instrumentation pushing the limits of in situ transmission electron microscopy, the question of local sample temperature comes into focus again. In this work the applicability of parallel beam electron diffraction to locally measure and monitor the sample temperature in TEM is assessed, with applications for in situ heating experiments in mind. With Au nanoparticles applied to the sample surface, temperature is measured in the range from RT to 890°C by evaluating the change in scattering angle upon thermal expansion. Repeated measurements at constant temperature reveal a statistical precision of the method as good as 2.8K. The applicability to locally measure the temperature is demonstrated mapping the temperature gradient across a heating chip. Owing to instantaneous response of thermal expansion to temperature changes, the method is well suited for monitoring even quick temperature changes, as demonstrated by quenching experiments. In order to enable extensive in situ studies, an evaluation method capable of processing large datasets with high precision is developed. Beam parallelity is identified as crucial experimental prerequisite and a routine is established, optimizing the microscope alignment in terms of beam parallelity. Apart from establishing a procedure for local temperature measurement, the present work demonstrates the unique capabilities of MEMS-based in situ heating equipment.

Industry 4.0 and its Impact on Reshoring Decisions of German Manufacturing Enterprises

Industry 4.0, the German initiative for the future of German industry, aims for multiple benefits. Among those are reshoring, i.e. bringing back production to Germany or turning to German suppliers. Owing to the lack of prior academic research in this field, we investigate this matter using an empirical approach. We obtain data from an own sample, encompassing 50 German industrial enterprises with global sourcing and production activities. Our study adds to the current body of knowledge, as empirical research in the field of reshoring is rare, despite presenting huge economic implications. Especially in the context of Industry 4.0, no prior research exists. Our study reveals that the general estimation for the importance of reshoring of Industry 4.0 remains questionable among our sample. However, clear reasons for reshoring can be deduced, especially differentiating between reshoring of own production in Germany, setting up new production in Germany and deciding for German suppliers.

Forming a Highly Active, Homogeneously Alloyed AuPt Co-catalyst Decoration on TiO2 Nanotubes Directly During Anodic Growth

Au and Pt do not form homogeneous bulk alloys as they are thermodynamically not miscible. However, we show that anodic TiO2 nanotubes (NTs) can in situ be uniformly decorated with homogeneous AuPt alloy nanoparticles (NPs) during their anodic growth. For this, a metallic Ti substrate containing low amounts of dissolved Au (0.1 atom %) and Pt (0.1 atom %) is used for anodizing. The matrix metal (Ti) is converted to oxide, whereas at the oxide/metal interface direct noble metal particle formation and alloying of Au and Pt takes place; continuously these particles are then picked up by the growing nanotube wall. In our experiments, the AuPt alloy NPs have an average size of 4.2 nm, and at the end of the anodic process, these are regularly dispersed over the TiO2 nanotubes. These alloyed AuPt particles act as excellent co-catalyst in photocatalytic H2 generation, with a H2 production rate of 12.04 μL h-1 under solar light. This represents a strongly enhanced activity as compared to TiO2 NTs decorated with monometallic particles of Au (7 μL h-1) or Pt (9.96 μL h-1).

Freestanding 3C-SiC Grown by Sublimation Epitaxy Using 3C-SiC Templates on Silicon

In this work a new approach for the production of freestanding cubic silicon carbide (3C SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).

Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation

In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

Defect structures at the silicon/3C-SiC interface

In all heteroepitaxial systems the interface between substrate and layer is a crucial point. In this work SEM and TEM studies on the interface between silicon substrate and cubic silicon carbide (3C-SiC) layers obtained by chemical vapor deposition (CVD) are presented. A clear connection between process parameters, like the design of substrate cleaning, and the heating ramp, and resulting defect structures at the substrate-layer interface could be found. Whereas the process step of etching in hot hydrogen for oxide removal is crucial for avoiding the generation of closed voids of type 2, the design of the temperature ramp up to growth temperature during carbonization influences the interface roughness. Here a fast ramp helps to obtain a flat interface.

Generation of Void-Like Structures during Hot-Hydrogen Etching of Si Substrates for 3C-SiC Epitaxy

A new type of void-like structure has been identified in thin 3C-SiC heteroepitaxial layers grown on silicon substrates. Similar surface structures can be found in micrographs published in the literature but have not been addressed so far. We propose a mechanism which explains the formation of these “type II voids” as result of hot-hydrogen etching. Type II voids seem to act as nucleation sites for the well-known faceted voids formed beneath the 3C-SiC layer during seeding (type I voids). Suppression of type II voids by appropriate high temperature cleaning steps therefore reduces the overall density of detrimental type I voids.