Julian R. Tolchard

Defect chemistry and oxygen ion migration in the apatite-type materials La9.33Si6O26 and La8Sr2Si6O26

Computer modelling techniques have been used to examine the mechanistic features of oxygen ion transport in the La8Sr2Si6O26 and La9.33Si6O26 apatite-oxides at the atomic level. The potential model reproduces the observed complex structures of both phases, which are comprised of [SiO4] tetrahedral units and La/O channels. Defect simulations have examined the lowest energy interstitial and vacancy sites. The results suggest that oxygen ion migration in La8Sr2Si6O26 is via a vacancy mechanism with a direct linear path between O5 sites. Interstitial oxygen migration is predicted for La9.33Si6O26via a non-linear (sinusoidal-like) pathway through the La3/O5 channel. The simulations demonstrate the importance of local relaxation of [SiO4] tetrahedra to assist in the facile conduction of oxygen interstitial ions. In general, the modelling study confirms that the high ionic conductivity in silicate-based apatites (with oxygen excess or cation vacancies) is mediated by oxygen interstitial migration.

Solid state 29Si NMR studies of apatite-type oxide ion conductors

Apatite-type silicates have been attracting considerable interest as a new class of oxide ion conductor, whose conduction is mediated by interstitial oxide ions. We report here the first 29Si solid state NMR studies of these materials with a systematic investigation of thirteen compositions. Our results indicate a correlation between the silicon environment and the observed conductivity. Specifically, samples which show poor conductivity demonstrate a single NMR resonance, whereas fast ion conducting compositions show more complex NMR spectra. For the oxygen excess samples La9M(SiO4)6O2.5 (M = Ca, Sr, Ba) two peaks are observed at chemical shifts of ≈−77.5 and −80.5 ppm, with the second peak correlated with a silicate group adjacent to an interstitial oxygen site. On Ti doping to give La9M(SiO4)6−x(TiO4)xO2.5 (x = 1,2) the second peak disappears, which is consistent with the “trapping” of interstitial oxygens by Ti and the consequent lowering in oxide ion conductivity. The samples La9.33(SiO4)6O2 and La9.67(SiO4)6O2.5 show a further third weak peak at a chemical shift (≈−85.0 ppm) consistent with the presence of some [Si2O7]6− units in these samples, due to condensation of two [SiO4]4− units. The effect of such condensation of [SiO4]4− units will be the creation of additional interstitial oxide ion defects, i.e. 2 [SiO4]4− → [Si2O7]6− + Oint2−. Overall, the results further highlight the importance of the [SiO4]4− substructure in these materials, and additionally suggest that 29Si NMR could potentially be used to screen apatite silicate materials for oxide ion conductivity

Doping strategies to optimise the oxide ion conductivity in apatite-type ionic conductors

The apatite-type phases, La(9.33+x)(Si/Ge)(6)O(26+3x/2), have recently been attracting considerable interest as potential electrolytes for solid oxide fuel cells. In this paper we report results from a range of doping studies in the Si based systems, aimed at determining the key features required for the optimisation of the conductivities. Systems examined have included alkaline earth doping on the rare earth site, and P, B, Ga, V doping on the Si site. By suitable doping strategies, factors such as the level of cation vacancies and oxygen excess have been investigated. The results show that the oxide ion conductivities of these apatite systems are maximised by the incorporation of either oxygen excess or cation vacancies, with the former producing the best oxide ion conductors. In terms of samples containing cation vacancies, conductivities are enhanced by doping lower valent ions, Ga, B, on the Si site. The presence of higher valent ions on these sites, e.g. P, appears to inhibit the incorporation of excess oxygen within the channels, and so limits the maximum conductivity that can be obtained. Overall the results suggest that the tetrahedral sites play a key role in the conduction properties of these materials, supporting recent modelling studies, which have suggested that these tetrahedra aid in the motion of the oxide ions down the conduction channels by co-operative displacements.

Doping and defect association in AZrO3(A = Ca, Ba) and LaMO3(M = Sc, Ga) perovskite-type ionic conductors

Computer simulation techniques have been used to investigate the defect chemistry of perovskite-structured ionic conductors based upon AZrO(3)(A = Ca, Ba) and LaMO(3)(M = Sc, Ga). Our studies have examined dopant site-selectivity, oxide ion migration and dopant-defect association at the atomic level. The energetics of dopant incorporation in AZrO(3) show strong correlation with ion size. We predict Y(3+) to be one of the most favourable dopants for BaZrO(3) on energetic grounds, which accords with experimental work where this cation is the commonly used acceptor dopant for effective proton conduction. Binding energies for hydroxy-dopant pairs in BaZrO(3) are predicted to be favourable with the magnitude of the association increasing along the series Y < Yb < In < Sc. This suggests that proton mobility would be very sensitive to the type of acceptor dopant ion particularly at higher dopant levels. Oxygen vacancy migration in LaScO(3) is via a curved pathway around the edge of the ScO(6) octahedron. Dopant-vacancy clusters comprised of divalent dopants (Sr, Ca) at the La site have significant binding energies in LaScO(3), but very low energies in LaGaO(3). This points to greater trapping of the oxygen vacancies in doped LaScO(3), perhaps leading to higher activation energies at increasing dopant levels in accord with the available conductivity data.

An apatite for fast oxide ion conduction

Atomistic simulations have allowed us to gain fresh insight into the mechanisms of oxygen ion transport in novel apatite silicates, which form part of a new family of ionic conductors for potential fuel cell applications.

Structural studies of apatite-type oxide ion conductors doped with cobalt

A series of Co doped lanthanum silicate apatite-type phases, La9.83Si4.5Co1.5O26, La9.66Si5CoO26, La10Si5CoO26.5 and La8BaCoSi6O26, have been synthesised, and neutron diffraction, EXAFS and XANES used to investigate their structures in detail. All compositions were shown to possess the hexagonal apatite structure, and the results confirmed that cobalt can be doped onto both the La and Si sites within the structure depending on the starting composition. The Co doping is shown to cause considerable local distortions within the apatite structure. In the case of Si site doping two compositions showed anisotropic peak broadening, which has been attributed to incommensurate ordering of oxygen within the apatite channels.

Synthesis and electrical characterisation of the apatite-type oxide ion conductors Nd9.33+xSi6-yGayO26+z

Apatite-type oxides have been attracting interest as a new class of oxide ion conductors. In this paper we examine the effect of Ga doping on the conductivity of the apatite silicate system, Nd9.33+xSi6O26+3x/2 and compare the results to those reported for similar doping studies in La9.33+xSi6O26+3x/2. The highest conductivities are observed for samples containing oxygen excess, which is in agreement with previous reports that interstitial oxide ions are important for high oxide ion conduction in these materials. For oxygen stoichiometric materials, i.e. Nd9.33+x/3Si6-xGaxO26, the Ga doping results in a significant increase in activation energy and a consequent lowering of the low temperature conductivity. This is contrary to results previously reported for the La containing analogues, which showed an enhancement of conductivity on Ga doping up to x=1.5. Possible explanations for the differences between the two systems are discussed.