Jun Nitta

Proposal on Temperature-Insensitive Semiconductor Lasers.

We propose temperature-insensitive semiconductor lasers which use compensation layers with negative refractive index temperature coefficients. It is theoretically shown that the maximum wavelength shift is -1.06 A with temperature change within a range of 100 K. It is also expected that the characteristic temperature is high because the band gap of the compensation layer increases with temperature.

Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode

An inhomogeneously biased distributed feedback (DFB) laser diode (LD) with two electrodes switched its polarization mode by 3 mA change of the bias current, maintaining single longitudinal mode oscillation. In the active layer of the LD, 13 nm thick and 0.6% tensile-strained InGaAs multiple quantum well (MQW) equalized the transverse electric and the transverse magnetic modal optical gain at 1.55 μm. With various grating pitches on the same MQW active layer, polarization switching DFB LDs were realized in the wavelength range as wide as 18 nm. The linewidth characteristics during the polarization switching were confirmed to be narrow due to the small switching current.