Network
Latest external collaboration on country level. Dive into details by clicking on the dots.
Publication
Featured researches published by Jun-Wei Chen.
international symposium on power semiconductor devices and ic's | 2008
Don Disney; Wilson Chan; Roy Lam; Robert Blattner; Steve Ma; Wesley Seng; Jun-Wei Chen; Michael E. Cornell; Richard K. Williams
A novel Lateral Trench MOSFET was fabricated in a 0.35 μm ModularBCDtrade technology. This device is compact, efficient, rugged, and offers hot-carrier lifetime that is far superior to equivalent LDMOS devices. Breakdown voltages up to 75 V were demonstrated.
international symposium on power semiconductor devices and ic's | 2009
Don Disney; Wilson Chan; Roy Lam; Robert Blattner; Steve Ma; Wesley Seng; Jun-Wei Chen; Richard K. Williams
A High-side Lateral Trench MOSFET (LTDMOS) was fabricated in a 0.35µm ModularBCD™ technology. The drift region of this device completely surrounds and isolates the trench, body, and source regions from the substrate, allowing the entire LTDMOS to float to a high-voltage above the substrate. A complete 28V half-bridge level-shifter was demonstrated using integrated floating high-side drive circuitry along with low-side and high-side LTDMOS devices.
Archive | 2007
Richard K. Williams; Donald Ray Disney; Jun-Wei Chen; Wai Tien Chan; Hyung Sik Ryu
Archive | 2008
Donald Ray Disney; Jun-Wei Chen; Richard K. Williams; HyungSik Ryu; Wai Tien Chan
Archive | 2007
Richard K. Williams; Donald Ray Disney; Jun-Wei Chen; Wai Tien Chan; HyungSik Ryu
Archive | 2006
Donald Ray Disney; Jun-Wei Chen; Richard K. Williams; HyungSik Ryu; Wai Tien Chan
Archive | 2007
Richard K. Williams; Donald Ray Disney; Wai Tien Chan; Jun-Wei Chen; HyungSik Ryu
Archive | 2007
HyungSik Ryu; Wai Tien Chan; Donald Ray Disney; Richard K. Williams; Jun-Wei Chen
Archive | 2007
Wai Tien Chan; Jun-Wei Chen; Donald Ray Disney; HyungSik Ryu; Richard K. Williams
Archive | 2007
Wai Tien Chan; Jun-Wei Chen; Donald Ray Disney; HyungSik Ryu; Richard K. Williams
