Jun Yeon Hwang

Strengthening behavior of carbon/metal nanocomposites

Nanocomposites reinforced with nano-scale reinforcements exhibit excellent mechanical properties with low volume fraction of the reinforcement. For instance, only an addition of 0.7 vol.% few-layer graphene (FLG) into the pure titanium shows strength of ~1.5 GPa, obviously much superior to that of the monolithic titanium. The strengthening efficiency of composites is determined by several factors such as reinforcement geometrical/spatial characteristics and interfacial features between the matrix and the reinforcement. For the metal-matrix nanocomposites (MMNCs), since the nano-scale reinforcement has significantly high specific surface area, interfacial feature is more important and has to be clearly evaluated in understanding property of MMNCs. Although many researchers suggested the theoretical work using continuum mechanics in order to estimate the mechanical properties of the metallic composites, a clear determination has yet not to be proven by systematic experimental works. Here, we provide a new model to predict strength and stiffness of MMNCs based on quantitative analysis of efficiency parameters in which interface feature is strongly emphasized. To validate the model, we select multi-walled carbon nanotube (MWCNT) and FLG for reinforcement, and titanium (Ti) and aluminum (Al) for the matrix to modify bonding strength and specific surface area in the MMNCs.

Defect healing of reduced graphene oxide via intramolecular cross-dehydrogenative coupling

A chemical defect healing of reduced graphene oxide (RGO) was carried out via intramolecular cross-dehydrogenative coupling (ICDC) with FeCl3 at room temperature. The Raman intensity ratio of the G-band to the D-band, the IG/ID ratio, of the RGO was increased from 0.77 to 1.64 after the ICDC reaction. From XPS measurements, the AC=C/AC-C ratio, where the peak intensities from the C=C and C-C bonds are abbreviated as AC=C and AC-C, of the RGO was increased from 2.88 to 3.79. These results demonstrate that the relative amount of sp(2)-hybridized carbon atoms is increased by the ICDC reaction. It is of great interest that after the ICDC reaction the electrical conductivity of the RGO was improved to 71 S cm(-1), which is 14 times higher than that of as-prepared RGO (5 S cm(-1)).

Cu−In−Ga−S quantum dot composition-dependent device performance of electrically driven light-emitting diodes

Colloidal synthesis of ternary and quaternary quantum dots (QDs) of In/Ga ratio-varied Cu−In1−x−Gax−S (CIGS) with nominal x = 0, 0.5, 0.7, and 1 and their application for the fabrication of quantum dot-light-emitting diodes (QLEDs) are reported. Four QLEDs having CIGS QDs with different compositions are all solution-processed in the framework of multilayered structure, where QD emitting layer is sandwiched by hybrid charge transport layers of poly(9-vinlycarbazole) and ZnO nanoparticles. The device performance such as luminance and efficiency is found to be strongly dependent on the composition of CIGS QDs, and well interpreted by the device energy level diagram proposed through the determination of QD valence band minima by photoelectron emission spectroscopic measurement.

Three-Dimensional Porous Copper-Graphene Heterostructures with Durability and High Heat Dissipation Performance

Porous materials have historically been of interest for a wide range of applications in thermal management, for example, in heat exchangers and thermal barriers. Rapid progress in electronic and optoelectronic technology necessitates more efficient spreading and dissipation of the heat generated in these devices, calling for the development of new thermal management materials. Here, we report an effective technique for the synthesis of porous Cu-graphene heterostructures with pores of about 30 μm and a porosity of 35%. Graphene layers were grown on the surfaces of porous Cu, which was formed via the coalescence of molten Cu microparticles. The surface passivation with graphene layers resulted in a thermal conductivity higher than that of porous Cu, especially at high temperatures (approximately 40% at 1173 K). The improved heat dissipation properties of the porous structures were demonstrated by analysis of the thermal resistance and temperature distribution of LED chips mounted on the structures. The effective combination of the structural and material properties of porous Cu-graphene heterostructures provides a new material for effective thermal management of high-power electronic and optoelectronic devices.

Composite diamond-like carbon and silicon carbide tips grown on oblique-cut Si(111) substrates

A diamond-like carbon (DLC) and silicon carbide (SiC) composite tip structure was successfully deposited on an oblique-cut Si(111) substrate of terrace width less than 21.1 A. The DLC morphology depended on the Si(111) terrace width in the oblique-cut Si(111) surface. A continuous and dense DLC film started to form on the Si(111) substrate of terrace width higher than 27.8 A. The density of the DLC/SiC composite tip also depended on the terrace width. The DLC films on the Si(111) with or without oblique cut had about the same Raman characteristics regardless of their different morphologies. The formation mechanism of the DLC/SiC tip structure was discussed.

Effects of nitrogen doping from pyrolyzed ionic liquid in carbon nanotube fibers: enhanced mechanical and electrical properties

Nitrogen doping in carbon nanotube (CNT) fibers using pyrolyzed ionic liquid induced interfacial hydrogen bonding between individual CNTs, enhancing mechanical properties and electrical conductivity simultaneously. In particular, the nitrogen doped CNT fiber using the ionic liquid BMI-I exhibited about 104%, 714%, and 38% increased tensile strength (0.65 N/tex), elastic modulus (83 N/tex), and electrical conductivity (1350 S cm(-1)), respectively, compared to pristine CNT fiber.

High-strength carbon nanotube/carbon composite fibers via chemical vapor infiltration

In this study, we have developed an efficient and scalable method for improving the mechanical properties of carbon nanotube (CNT) fibers. The mechanical properties of as-synthesized CNT fibers are primarily limited by their porous structures and the weak bonding between adjacent CNTs. These result in inefficient load transfer, leading to low tensile strength and modulus. In order to overcome these limitations, we have adopted chemical vapor infiltration (CVI) to efficiently fill the internal voids of the CNT fibers with carbon species which are thermally decomposed from gas phase hydrocarbon. Through the optimization of the processing time, temperature, and gas flow velocity, we have confirmed that carbon species formed by the thermal decomposition of acetylene (C2H2) gas successfully infiltrated into porous CNT fibers and densified them at relatively low temperatures (650-750 °C). As a result, after CVI processing of the as-synthesized CNT fibers under optimum conditions, the tensile strength and modulus increased from 0.6 GPa to 1.7 GPa and from 25 GPa to 127 GPa, respectively. The CVI technique, combined with the direct spinning of CNT fibers, can open up a route to the fast and scalable fabrication of high performance CNT/C composite fibers. In addition, the CVI technique is a platform technology that can be easily adapted into other nano-carbon based yarn-like fibers such as graphene fibers.

Synthesis and mechanistic study of in situ halogen/nitrogen dual-doping in graphene tailored by stepwise pyrolysis of ionic liquids

New halogen/nitrogen dual-doped graphenes (X/N-G) with thermally tunable doping levels are synthesized via the thermal reduction of graphite oxide (GO) with stepwise-pyrolyzed ionic liquids. The doping process of halogen and nitrogen into the graphene lattice proceeds via substitutional or covalent bonding through the physisorption or chemisorption of in situ pyrolyzed dopant precursors. The doping process is performed by heating to 300-400 °C of ionic liquid, and the chemically assisted reduction of GO is facilitated by ionic iodine, resulting in I/N-G materials possessing about three and two orders of magnitude higher conductivity (∼22,200 S m(-1)) and charge carrier density (∼10(21) cm(-3)), compared to those of thermally reduced GO. The thermally tunable doping levels of halogen in X/N-G significantly increase the conductivity of doped graphene to ∼27,800 S m(-1).

Recovery Mechanism of Degraded Black Phosphorus Field‐Effect Transistors by 1,2‐Ethanedithiol Chemistry and Extended Device Stability

Black phosphorus (BP) has drawn enormous attention for both intriguing material characteristics and electronic and optoelectronic applications. In spite of excellent advantages for semiconductor device applications, the performance of BP devices is hampered by the formation of phosphorus oxide on the BP surface under ambient conditions. It is thus necessary to resolve the oxygen-induced degradation on the surface of BP to recover the characteristics and stability of the devices. To solve this problem, it is demonstrated that a 1,2-ethanedithiol (EDT) treatment is a simple and effective way to remove the bubbles formed on the BP surface. The device characteristics of the degraded BP field-effect transistor (FET) are completely recovered to the level of the pristine cases by the EDT treatment. The underlying principle of bubble elimination on the BP surface by the EDT treatment is systematically analyzed by density functional theory calculation, atomic force microscopy, and X-ray photoelectron spectroscopy analysis. In addition, the performance of the hexagonal boron nitride-protected BP FET is completely retained without changing device characteristics even when exposed to 30 d or more in air. The EDT-induced recovering effect will allow a new route for the optimization of electronic and optoelectronic devices based on BP.

Structural effect of two-dimensional BNNS on grain growth suppressing behaviors in Al-matrix nanocomposites

While nanocrystalline (NC) metals exhibit superior strength to conventional microcrystalline metals, their thermal instability has hampered their application at high temperatures. Herein, two-dimensional (2D) boron nitride nanosheets (BNNS) are proposed as reinforcement to enhance the strength as well as the thermal stability of NC Al. The strength of pure Al was increased from 80 to 468 MPa by refining its grains from ~600 to ~40 nm, and it was further enhanced to 685 MPa by incorporating 2 vol% of BNNS. Moreover, the small amount of BNNS was found to effectively suppress grain growth of NC Al at 580 °C (~0.9 Tm, where Tm is the melting point of Al), which prevented a strength drop at high temperature. Finally, the Zener pinning model in conjunction with phase-field simulations was utilized to qualitatively analyze the effect of the BNNS on the grain boundary pinning as a function of volume, shape, and orientation of the reinforcement. The model demonstrated that the pinning force of 2D reinforcements is much higher than that of spherical particles. Hence, 2D BNNS offer the possibility of developing Al-matrix nanocomposites for high-temperature structural applications.